福山, 敦彦, 有村, 光生, 井上, 麻衣子, 矢野, 伊織, 當瀬, 智之, 境, 貴洋, 碇, 哲雄, Arimura, Mitsuo, Touse, Tomoyuki, Sakai, Kentaro
宮崎大学工学部紀要
37
15-20,
2008-08-30
AlGaN/GaN hetero-structures have attracted much attention for their novel device applications. It is also known that a two-dimensional electron gas (2DEG) layer is formed by an accumulation of …
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