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Baba Hiroki, Ruiz-Varona Ana, Asami Yasushi Urban and Regional Planning Review 9 (0), 153-166, 2022

...By contrast, the Japanese method of vacancy control applies to East Asian and socialist countries, where national governments can promptly implement policies....

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Iwasaki Yutaka, Kitahara Koichi, Kimura Kaoru MATERIALS TRANSACTIONS 61 (11), 2079-2082, 2020-11-01

<p>Although the binary Al–Ir cubic quasicrystalline approximant has been expected to be a narrow-gap semiconductor, it has not yet been produced because the presence of Al site vacancies causes …

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岩﨑 祐昂, 北原 功一, 木村 薫 日本熱電学会誌 16 (3), 139-143, 2019-12-10

Although the binary Al-Ir cubic quasicrystalline approximant (QCA) has been expected to be a narrow gap semiconductor， it does not realize due to large amount of aluminum sites vacancies leading to …

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Khasim Saheb Bayikadi, Raman Sankar, Chien Ting Wu, Chengliang Xia, Yue Chen, Li-Chyong Chen, Kuei-Hsien Chen, Fang-Cheng Chou Journal of Materials Chemistry A 7 (25), 15181-15189, 2019

<p>The thermoelectric figure-of-merit (ZT) for GeTe powder is able to be raised from ∼0.8 to 1.37 at high temperature near ∼500 °C by tuning the Ge vacancy level through a reversible <italic>in …

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山口, 晋平, Yamaguchi, Shimpei 2018-09

identifier:oai:t2r2.star.titech.ac.jp:50493541

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Marc Duchardt, Uwe Ruschewitz, Stefan Adams, Stefanie Dehnen, Bernhard Roling Angewandte Chemie 130 (5), 1365-1369, 2018-01-08

<jats:title>Abstract</jats:title><jats:p>Highly conductive solid electrolytes are crucial to the development of efficient all‐solid‐state batteries. Meanwhile, the ion conductivities of lithium …

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Marc Duchardt, Uwe Ruschewitz, Stefan Adams, Stefanie Dehnen, Bernhard Roling Angewandte Chemie International Edition 57 (5), 1351-1355, 2018-01-08

<jats:title>Abstract</jats:title><jats:p>Highly conductive solid electrolytes are crucial to the development of efficient all‐solid‐state batteries. Meanwhile, the ion conductivities of lithium …

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Chaewon Kim, Jin-Woo Park, Jiyoung Kim, Sung-Jei Hong, Mi Jung Lee Journal of Alloys and Compounds 726 712-719, 2017-12

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Yunpeng Zuo, Dewei Rao, Shuo Li, Tingting Li, Guilin Zhu, Shuangming Chen, Li Song, Yang Chai, Heyou Han Advanced Materials 30 (1), 2017-11-10

<jats:title>Abstract</jats:title><jats:p>Structure‐engineered Pd‐based catalysts at the atomic level can effectively improve the catalytic performance for oxygen or small organic molecules …

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Seokjae Won, Sang Yeon Lee, Jucheol Park, Hyungtak Seo Scientific Reports 7 (1), 10186-, 2017-08-31

<jats:title>Abstract</jats:title><jats:p>Resistive switching devices are recognized as candidates for next-generation memory devices in that they can replace conventional memory devices. In these …

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Jun Ge, Mohamed Chaker ACS Applied Materials & Interfaces 9 (19), 16327-16334, 2017-05-08

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Z. W. Zhang, L. Yao, X.-L. Wang, M. K. Miller Scientific Reports 5 (1), 10600-, 2015-05-29

<jats:title>Abstract</jats:title><jats:p>A new class of advanced structural materials, based on the Fe-O-vacancy system, has exceptional resistance to high-temperature creep and excellent tolerance …

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Young-Min Kim, Anna Morozovska, Eugene Eliseev, Mark P. Oxley, Rohan Mishra, Sverre M. Selbach, Tor Grande, S. T. Pantelides, Sergei V. Kalinin, Albina Y. Borisevich Nature Materials 13 (11), 1019-1025, 2014-08-17

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武安 光太郎, 小倉 正平, 福谷 克之 日本物理学会講演概要集 69.2.4 (0), 674-, 2014

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Qi Wang, Yaomi Itoh, Tohru Tsuruoka, Tsuyoshi Hasegawa, Satoshi Watanabe, Shu Yamaguchi, Toshiro Hiramoto, Masakazu Aono Key Engineering Materials 596 111-115, 2013-12

...Since turning off to the insulating state could not be achieved, the switching process resembles the soft breakdown of the first turning-on process of oxygen vacancy controlled resistive random access...

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西尾 学, 諸貫 信行 機械材料・材料加工技術講演会講演論文集 2013.21 (0), _618-1_-_618-3_, 2013

...This study aims to make clear the vacancy controllability of inverse opal structure fabricated by patterned and repeated dip-coating The process consists of two steps of coating The first one is fabrication...

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Yu Liu, Liangbao Jiang, Gang Wang, Sibin Zuo, Wenjun Wang, Xiaolong Chen Applied Physics Letters 100 (12), 2012-03-19

...The vacancy control may be applicable to other III-V nitride semiconductors in tuning their magnetism.</jats:p>...

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Devajyoti Mukherjee, Pritish Mukherjee, Hariharan Srikanth, Sarath Witanachchi Journal of Applied Physics 111 (7), 2012-03-12

<jats:p>Epitaxial Zn0.98Mn0.02O thin films were grown on c-cut sapphire substrates under various ambient oxygen pressures (pO2) using pulsed laser deposition. The variation of pO2 during the growth …

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Yutaka Moritomo, Kazuma Wakaume, Yutaro Kurihara, Jungeun Kim Journal of the Physical Society of Japan 80 (7), 074716-, 2011-07-15

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Lingshun Xu, Wenhua Zhang, Yulin Zhang, Zongfang Wu, Bohao Chen, Zhiquan Jiang, Yunsheng Ma, Jinlong Yang, Weixin Huang The Journal of Physical Chemistry C 115 (14), 6815-6824, 2011-03-14

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E. Senthil kumar, S. Venkatesh, M. S. Ramachandra Rao Applied Physics Letters 96 (23), 232504-, 2010-06-07

<jats:p>We investigated the electrical, magnetic, and magnetotransport properties of Li–Ni codoped ZnO thin films in the electron dominated, hole dominated, and insulating regimes. In a narrow …

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Chang-Cheng Chuo, Chia-Ming Lee, Jen-Inn Chyi Applied Physics Letters 78 (3), 314-316, 2001-01-15

...The interdiffusion process is characterized by a single activation energy of about 3.4±0.5 eV and governed by vacancy-controlled second-nearest-neighbor hopping....

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M. K. Hudait, P. Modak, S. Hardikar, S. B. Krupanidhi Journal of Applied Physics 83 (8), 4454-4461, 1998-04-15

...A vacancy control model may explain the PL shift towards higher energy with increasing AsH3 mole fraction. The PL peak shifts towards higher energy with increasing TMGa mole fraction....

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S. F. Wee, M. K. Chai, K. P. Homewood, W. P. Gillin Journal of Applied Physics 82 (10), 4842-4846, 1997-11-15

...This result can be explained by the diffusion in all cases being governed by a single mechanism, vacancy-controlled second-nearest-neighbor hopping.</jats:p>...

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Mantu Kumar Hudait, Prasanta Modak, Shyam Hardikar, S. B. Krupanidhi Journal of Applied Physics 82 (10), 4931-4937, 1997-11-15

...This can be explained also by the vacancy control model....

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Victoria A. Gercher, David F. Cox, Jean-Marc Themlin Surface Science 306 (3), 279-293, 1994-04

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W. P. Gillin, S. S. Rao, I. V. Bradley, K. P. Homewood, A. D. Smith, A. T. R. Briggs Applied Physics Letters 63 (6), 797-799, 1993-08-09

<jats:p>In this letter we present the results of a photoluminescence study of the interdiffusion of arsenic and phosphorous in the In0.66Ga0.33As/In0.66Ga0.33As0.7P0.3 system over the temperature …

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Yu. M. Mishin, Chr. Herzig Journal of Applied Physics 73 (12), 8206-8214, 1993-06-15

...The second part of the profile either shows strong downward curvature (vacancy-controlled D) or demonstrates normal Fisher-like behavior (interstitial-controlled D)....

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Nakanishi Norihiko, Shigematsu Toshihiko Materials Transactions, JIM 33 (3), 318-323, 1992

...In other words, a high diffusibility of oxygen ions through their vacancies controls the propagation rate of the shear transformation in locally distorted tetragonal lattice....

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Jin Huang, Madeleine Meyer, Vassilis Pontikis Physical Review Letters 63 (6), 628-631, 1989-08-07

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C. Y. Chang, L. P. Chen, C. H. Wu Journal of Applied Physics 61 (5), 1860-1863, 1987-03-01

...A vacancy control model can be adopted to explain the above results consistently. The growth rate of the epilayer is enhanced by zinc incorporation and decreases with increasing growth temperature....

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L. P. Chen, C. Y. Chang, C. H. Wu Journal of Applied Physics 61 (1), 442-444, 1987-01-01

...It can be explained by a vacancy control model.</jats:p>...

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飛田 守孝, 助台 栄一 日本金属学会誌 50 (10), 893-899, 1986

...The effect of quenching temperature on age hardening was explained by the difference in the amount of quenched-in vacancies controlling the time period to the appearance of maximum hardness....

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Y. Estrin, K. Lücke Acta Metallurgica 30 (5), 983-998, 1982-05

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A. R. McGhie, H. Blum, M. M. Labes The Journal of Chemical Physics 52 (12), 6141-6144, 1970-06-15

...From both of these studies, it is concluded that, in the temperature range 80–90°C, self-diffusion and radical recombination occur by a vacancy-controlled bulk diffusion process....

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遠藤 孝雄, 圓城 敏男, 足立 正雄 軽金属 20 (4), 176-181, 1970

...The difference between the effects of both treatments would be attributed to the change in transition temperature range from the cross-slip mechanism to the vacancy controlling mechanism....

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B.S Berry, J.L Orehotsky Acta Metallurgica 16 (5), 683-695, 1968-05

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W. R. Wilcox, T. J. LaChapelle Journal of Applied Physics 35 (1), 240-246, 1964-01-01

...<jats:p>Gold was found to diffuse into silicon by a complex mechanism involving a vacancy-controlled interstitial-substitutional equilibrium....

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