Recent developments in thin film research : epitaxial growth and nanostructures, electron microscopy and x-ray diffraction : proceedings of Symposium B on Epitaxial Thin Film Growth and Nanostructures and proceedings of Symposium C on Recent Developments in Electron Microscopy and X-Ray Diffraction of Thin Film Structures of the 1997 ICAM/E-MRS Spring Conference, Strasbourg, France, June 16-20, 1997
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Recent developments in thin film research : epitaxial growth and nanostructures, electron microscopy and x-ray diffraction : proceedings of Symposium B on Epitaxial Thin Film Growth and Nanostructures and proceedings of Symposium C on Recent Developments in Electron Microscopy and X-Ray Diffraction of Thin Film Structures of the 1997 ICAM/E-MRS Spring Conference, Strasbourg, France, June 16-20, 1997
（European Materials Research Society symposia proceedings, v. 69）
Elsevier, c1997
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"Reprinted from Thin solid films, vol. 318 (1-2) and Thin solid films, vol. 319 (1-2)"--T.p. verso
Includes bibliographical references and indexes
内容説明・目次
内容説明
The ICAM'97 symposium on "Recent Developments in Electron Microscopy and X-Ray Diffraction of Thin Film Structures" was presented at the combined 1997 International Conference on Applied Materials/European Materials Research Society Spring meeting (ICAM'97/E-MRS'97) held in Strasbourg (France) from 16-20 June 1997. . More than 60 participants representing 10 countries met to discuss the recent developments related to the study of crystalline structure of thin films: first stages of growth, morphology, strains and their relaxation. The aim of this symposium was to discuss the applications of both electron microscopy and X-ray diffraction in thin film studies. X-ray diffraction is a non-destructive method giving very accurate information in reciprocal space for the determination of crystalline data. Many of the contributions were concerned with following such growth processes such as epitaxy of metals and semiconducting materials, measuring the average strain and the structure and the morphology of the films. The electron microscopy investigations allow the study of microstructures and crystalline defects. The main handicap is the necessity for the destruction of the specimens. Electron microscopy is useful for studying the randomly distributed failures in periodicity of crystalline structures.
目次
Part headings, chapter headings and selected papers: Part 1. Growth Methods and Kinetics. STM study on silicon(001) grown by magnetron sputter epitaxy (B. Voegeli et al.). Simulation. Monte Carlo simulation of mismatch relaxation and island coalescence during heteroepitaxial growth (M. Djafari Rouhani et al.). Nanoparticles and Dots. Structural and optical studies of CdS nanocrystals embedded in silicon dioxide films (A.G. Rolo et al.). Atomic Scale Characterization. Surface waves as a tool for the study of phase transition of nanoparticles (P. Cheyssac et al.). Semiconductor Interfaces and Quantum Wells. Formation of epitaxial HoSi2 layer on Si(100) (G. Petoe et al.). Metallic Thin Layers. Studying interfaces on a nm scale by BEEM (T. Meyer et al.). HT Superconductors and Metalloxides. Epitaxial piezoelectric PZT thin films obtained by pulsed laser deposition (P. Verardi et al.). Part 2. X-Ray Analysis of Strain in Thin Films. Fine interference effects in X-ray diffraction from multilayered structures (E. Zolotoyabko). X-Ray Analysis of Crystalline Structure. Lattice parameter change in submicron Si whiskers (A.I. Klimovskaya et al.). TEM Analysis of Crystalline Structure. Transmission electron microscopy of thin-film transistors on glass substrates (K. Tsujimoto et al.). Image Processing and HREM. Microstructure imaging of the YBCO thin film/MgO substrate interface: HRTEM and Fourier analysis of the Moire fringe pattern (S.Auzary et al.). Combined TEM and X-Ray of Thin Films Analysis. Investigation of chemical ordering in MBE-grown Co xPt1 - x films by X-ray diffraction and high-resolution transmission electron microscopy (M. Maret et al.).
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