Robust Hole Transport in a Thienothiophene Derivative toward Low-cost Electronics

• Oku, Shinya

• Takamiya, Kazuhiro

• Adachi, Daisuke

• Ishikawa, Shuhei

• Nagamatsu, Shuichi

• Takashima, Wataru

• Hayase, Shuzi

• Kaneto, Keiichi

Abstract

A new p-type organic semiconductor, bis(hexylthiophenyl)thienothiophene, was synthesized and evaluated for its transport characteristics. A robust hole transport was observed even on bare SiO2/Si and on flexible substrates under dark–air conditions. The discovered characteristics reduce the surface-preparation necessary for device fabrication for low-cost electronics.

Journal

• Chemistry Letters

  Chemistry Letters 39 (12), 1315-1316, 2010-11-13

  社団法人日本化学会

Keywords

• General Chemistry

Details

• CRID: 1050001338910898688
• NII Article ID: 10027468710
• NII Book ID: AA00603318
• ISSN: 13480715
• ISSN: 03667022
• DOI: 10.1246/cl.2010.1315
• HANDLE: 10228/5956
• Web Site: https://kyutech.repo.nii.ac.jp/records/4736
• Web Site: https://academic.oup.com/chemlett/article-pdf/39/12/1315/55603255/cl.2010.1315.pdf
• Text Lang: en
• Article Type: journal article
• Data Source:
  • IRDB
  • Crossref
  • CiNii Articles