Nitrided oxides prepared by rapid thermal processing and applications to submicrometer MOSFET's 急速加熱形成による窒化二酸化珪素膜とその微細MOSトランジスタへの応用に関する研究

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Author

    • 堀, 隆 ホリ, タカシ

Bibliographic Information

Title

Nitrided oxides prepared by rapid thermal processing and applications to submicrometer MOSFET's

Other Title

急速加熱形成による窒化二酸化珪素膜とその微細MOSトランジスタへの応用に関する研究

Author

堀, 隆

Author(Another name)

ホリ, タカシ

University

京都大学

Types of degree

工学博士

Grant ID

乙第7396号

Degree year

1991-01-23

Note and Description

博士論文

Table of Contents

  1. 論文目録 / (0001.jp2)
  2. Contents / (0004.jp2)
  3. 1.Introduction / p1 (0005.jp2)
  4. References / p7 (0008.jp2)
  5. 2.Scaling and Thin Insulators / p9 (0009.jp2)
  6. 2-1.Introduction / p10 (0010.jp2)
  7. 2-2.Scaling Law of Silicon MOSFET's / p10 (0010.jp2)
  8. 2-3.Scaling Limitations of MOS Technologies / p14 (0012.jp2)
  9. 2-4.Rapid Thermal Processing (RTP) for Gate Dielectrics / p19 (0014.jp2)
  10. 2-5.Summary / p27 (0018.jp2)
  11. References / p28 (0019.jp2)
  12. 3.Physical Properties of Nitrided Oxides / p30 (0020.jp2)
  13. 3-1.Introduction / p31 (0020.jp2)
  14. 3-2.Sample Preparation / p32 (0021.jp2)
  15. 3-3.AES Analyses of Compositions / p34 (0022.jp2)
  16. 3-4.SIMS Analyses of Hydrogen Contents / p48 (0029.jp2)
  17. 3-5.XPS Analyses / p52 (0031.jp2)
  18. 3-6.TEM Observations / p56 (0033.jp2)
  19. 3-7.Discussion / p58 (0034.jp2)
  20. 3-8.Summary / p61 (0035.jp2)
  21. References / p63 (0036.jp2)
  22. 4.Initial Electrical Properties of Nitrided Oxides / p65 (0037.jp2)
  23. 4-1.Introduction / p66 (0038.jp2)
  24. 4-2.Experimental / p67 (0038.jp2)
  25. 4-3.Fixed Charges and Interface States of Nitrided Oxides / p68 (0039.jp2)
  26. 4-4.A Model for Initial Electrical Properties / p76 (0043.jp2)
  27. 4-5.Initial Electrical Properties of Reoxidized Nitrided Oxides / p83 (0046.jp2)
  28. 4-6.Summary / p88 (0049.jp2)
  29. Appendix / p90 (0050.jp2)
  30. References / p91 (0050.jp2)
  31. 5.Charge-Trapping Properties of Nitrided Oxides / p93 (0051.jp2)
  32. 5-1.Introduction / p94 (0052.jp2)
  33. 5-2.Experimental / p96 (0053.jp2)
  34. 5-3.Electron Trapping and Interface-State Generation of Nitrided Oxides / p98 (0054.jp2)
  35. 5-4.Charge-Trapping Properties of Reoxidized Nitrided Oxides / p102 (0056.jp2)
  36. 5-5.Models for Charge-Trapping Properties / p108 (0059.jp2)
  37. 5-6.Summary / p120 (0065.jp2)
  38. Appendix / p122 (0066.jp2)
  39. References / p123 (0066.jp2)
  40. 6.Applications of Nitrided Oxides to Submicrometer MOSFET's / p126 (0068.jp2)
  41. 6-1.MOSFET Performance of Nitrided Oxides / p127 (0068.jp2)
  42. 6-2.Hot-Carrier Effects in MOSFET's with Nitrided Oxides / p136 (0073.jp2)
  43. 6-3.Application to MOSFET's with Polycide Gate Electrodes / p144 (0077.jp2)
  44. References / p150 (0080.jp2)
  45. 7.Conclusions / p152 (0081.jp2)
  46. Acknowledgment / p157 (0083.jp2)
  47. Paper List / p158 (0084.jp2)
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Codes

  • NII Article ID (NAID)
    500000073118
  • NII Author ID (NRID)
    • 8000000073313
  • DOI(NDL)
  • NDLBibID
    • 000000237432
  • Source
    • NDL ONLINE
    • NDL Digital Collections

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