Growth of crystals

著者

• Shubnikov, A. V. (Alekseĭ Vasilʹevich)
• Givargizov, Evgeniĭ Ivanovich
• Bagdasarov, Kh. S.
• Chernov, A. A.
• Lube, E.L.
• Fulford, G.D
• Sheftal', N. N.
• Bradley, J.E.S.
• Kisin, V. I.
• White, E. A. D.
• Grinberg, S. A.
• Melnikova, A. M.
• Wester, Dennis W.
• All-Union Donference on Crystals Growth
• Conference on the Growth of Crystals

書誌事項

Growth of crystals

A.V. Shubnikov and N.N. Sheftal', editors

Consultants Bureau, 1958-

• v. 1
• v. 2
• v. 3
• v. 4
• v. 5A
• v. 5B
• v. 6A
• v. 6B
• v. 7
• v. 8
• v. 9
• v. 10
• v. 11
• v. 12
• v. 13
• v. 14
• v. 15
• v. 16
• v. 17
• v. 18
• v. 19
• v. 20
• v. 21

タイトル別名

Рост кристаллов

Rost kristallov

注記

Vol. 1-2: 1st Conference held at Msocow, 1956. -- Vol. 3-4: 2nd Conferenceon held at Moscow, 1959. -- Vol. 5A-6B: 3rd Moscow Conference, 1963. -- Vol. 7-9: 7th conference held at Moscow, 1966. -- Vol. 10: 4nd All-Union Conference on Crystals Growth in Tsakhkadzor, 1972

Vol. 1-4: edited by A.V. Shubnikov and N.N. Sheftal'

Vol. 5A-5B: edited by N.N. Sheftal' ; tr. by J.E.S. Bradley

Vol. 6A-6B: edited by N.N. Sheftal' ; tr. by George D. Fulford ; translation editor, J.E.S. Bradley

Vol. 7-8: edited by N.N. Sheftal' ; translated by J.E.S. Bradley

Vol. 9: edited by N.N. Sheftal' and E.I. Givargizov ; translated by J.E.S. Bradley

Vol. 10: edited by N.N. Sheftal' ; translated by J.E.S. Bradley

Vol. 11-12: edited by A.A. Chernov ; translated by J.E.S. Bradley

Vol. 13: edited by E.I. Givargizov ; translated by V.I. Kisin ; translation edited by E.A.D. White

Vol. 14: edited by E.I. Givargizov ; translated by J.E.S. Bradley

Vol. 15, 17-18: joint editor, S.A. Grinberg

Vol. 16: edited by Kh.S. Bagdasarov and É.L. Lube ; tr. by Dennis W. Wester

Vol. 18-19: translated by Dennis W. Wester

Vol. 20-21: edited by E.I. Givargizov and A.M. Melnikova ; translated by Dennis W. Wester

内容説明・目次

巻冊次

v. 10 ISBN 9780306181108

内容説明

This tenth volume completes the first series of "Growth of Crystals," which began in 1957. The sources of the volumes are as follows: for Vol. I, the 1st All-Union Conference on Crystal Growth; for Vol. 3, the 2nd; and for Vols. 5 and 6, the 3rd; Vols. 7 and 8 reported the International Symposium on Crystal Growth at the Seventh International Crystallography Con- gress, and Vol. 9 the 1969 symposium on crystal growth dedicated to E. S. Fedorov; Vols. 2, 4, and 10 did not originate in conferences. The main problem that largely occupied the conferences and symposia and also the inter- mediate volumes was that of real crystal formation, as well as the relation of crystal growth theory to practical crystal production. This tenth volume, which completes this first series, is to a considerable extent a survey. It contains more extensive theoretical and experimental original papers, as well as some shorter papers dealing with particular but important aspects of real crystal formation. The volume opens with a paper by V. V. Voronkov, which deals with the structure of crystal surface in Kossel's model. The model as proposed by Kossel is extremely simple. It deals qualitatively with the basic trends in the growth of an idealized crystal in its own va- por at absolute zero, and naturally does not allow one to perform quantitative studies on com- plex real processes.

目次

Structure of a crystal surface and Kossel's model.- Condensation mechanisms and liquid structure.- The two-dimensional nucleation rate for a homopolar crystal containing microscopic defects.- Epitaxial growth of single-crystal films (review).- Crystallization of epitaxial films by vacuum condensation: optimal conditions and orientation mechanism.- Crystallite orientation in electrodeposition of metals.- Crystallization of cadmium sulfide from vapor.- Growth mechanism for vapor-deposited cadmium sulfide.- Pinacoid growth pyramids in artificial quartz crystals.- Growth conditions and the structure of artificial quartz crystals.- Some trends in shape production for artificial quartz crystals.- Growth anisotropy of gallium arsenide and germanium in gas-transport systems.- Shape of twins with the diamond structure.- Crystallization mechanism of germanium from solution in gold.- Scanning electron microscope observation of domain fields in SbSI crystals grown from the vapor state.- Mass crystal growth.- Trends in real crystal formation and some principles for single crystal growth.- Effects of growth conditions on single crystal shape.- Melt supercooling in the growth of germanium single crystals.- Effects of medium incorporation in the evolution of final growth forms in crystals.- Electrocrystallization and the electrolytic deposition mechanism for silver.- Thermal approach of atoms, phase transitions, and polytypes.- Simulation of crystal growth.- A crystal as a medium that orders phenomena.- In memory of A. S. Shein.- Postscript.

巻冊次

v. 11 ISBN 9780306181115

内容説明

The Growth of Crystals series was begun in 1957 by A. V. Shubnikov and . N. N. SheftaP with the publication of the first volume. which contained the proceedings of the First All-Union Conference on Crystal Growth. The initiative and considerable efforts of the principal editor of the entire series. N. N. Sheftal', and his assistants led over the next 15 years to the publica- tion of ten volumes which have assumed a leading position among the numerous books on crys- tal growth. It has become traditional in this series to adopt a broad approach to crystal growth problems, and this approach is continued in Volumes 11 and 12, which are composed mainly of papers presented at the Fourth All-Union Conference on Crystal Growth in Tsakhkadzor. September 17-22, 1972. These papers, presented by both Soviet and foreign workers, deal with crystal growth processes. growth methods. and crystal perfection. Many of the papers reflect the tendency for our knowledge of crystallization processes to become increasingly more fundamental. with emphaSis on quantitative treatments. There are some extremely difficult problems in this approach. especially when the requirements of practical uses are envisaged. and many of these are discussed in various ways in these two volumes. These topics include detailed theoretical and experimental analysis of cooperative phenomena in crystallization. with emphasis not only on statistical thermodynamics but also statistical kinetics. This approach involves research on the structure and properties of phase boundaries. including the composition and structure of surface layers in liquids.

目次

Reaction Features of Silica.- I. Nucleation and Initial Growth Stages.- Homogeneous Nucleation in a Liquid Metal.- Crystal Nucleation Kinetics in Small Volumes.- The Effects of Thermal Strains on the Activity of Nuclei in Induced Crystallization in Glasses.- High-Voltage Electron Microscopy Observation of Nucleation and Growth of Precipitates on Dislocations in Al-4% Cu Alloy.- Dispersion of the New Phase in the Early stages of Mass Crystallization.- Crystallization as a Matrix Replication Process.- Elastic Interaction in Epitaxial Effects.- Electron-Microscopic Investigations of Surface Diffusion and Nucleation of Au on Ag (111).- Nucleation, Growth Processes, and Electrical Properties of Semiconductor Thin Films.- Distribution and Nature of Gold Crystallization Centers on Single-Crystal Substrates.- Substrate-Induced Strain by Epitaxially Oriented Nuclei.- Migration of Polyatomic Groups in Crystal Growth from a Vapor.- Selectivity and Growth Mechanisms for Stages of Growth from a Vapor or Gas.- Molecular-Beam Condensation and Accommodation: Sodium Chloride on Tantalum.- Autoepitaxial Nucleation in Ionic Crystals.- Crystalline Growths on Object Points in Field-Emission Microscopes.- Structure and Desorption Energy for Monomolecular Barium Oxide Films.- II. Growth Kinetics and Surface Morphology.- Computer Modeling of Crystal Growth Processes.- Monatomic Layer Propagation Rate and The Electrolytic Deposition Mechanism for Silver.- Determination of Kinetic Crystallization Coefficients in Experiments with Whiskers.- Bulk and Interface Effects in Crystal Growth by the Moving-Solvent Method.- Faces with High Indices on Ionic Crystals as a Consequence of Layer Growth.- Macroscopic Steps on Vicinal Growth Surfaces in Germanium.- Simulation of Modes of Vibrations in Trains of Steps.- The Distortion Mechanism for Photolithographic Projections in the Epitaxy of Silicon.- Effects of Dopes on the Anisotropy in the Rate of Growth of Germanium from the Vapor State.- Effects of Crystallization Conditions on Growth and Doping Anisotropy for Epitaxial Germanium.- Effects of Foreign Particles on a Macroscopically Smooth Surface on the Movement of Steps Due to Evaporation and Condensation.- Estimation of the Mean Displacement of Adsorbed Molecules from the Growth of Lochkeims.- Observation of the Kinematic Interaction of Surface Steps During Evaporation of NaCl.- On the Shape of Growth and Evaporation Spirals.- Holographic Techniques in Crystal Growth.- Concentration Inhomogeneity in a Solution during Crystal Growth and Dissolution.- III. Growth Shape Stability and Transport Processes.- Stability of a Planar Growth Front for Anisotropic Surface Kinetics.- Morphological Stability near a Grain Boundary Groove in a Solid-Liquid Interface during Solidification of a Pure Substance.- Morphological Stability near a Grain Boundary Groove in a Solid-Liquid Interface during Solidification of a Binary Alloy.- Size Behavior of Crystals Interacting by Diffusion During Phase Transition.- Supercooling for Growth Front Motion Limited by the Heat-Transfer Rate.- A Theoretical Study of the Effects of Various Factors on Impurity Zoning in Crystals.- Steady-State Dendritic Growth.- Diffusion-Limited Growth of Zinc Single Crystals.- Factors Governing Crystal Growth and Dissolution Shapes in Molten Metals.- Growth of Naphthalene and p-Dibromobenzene Crystals in Thin Films of Melt.- Effects of a Moving Magnetic Field on the Stability of a Crystallization Front in a Melt.- IV. Impurity Trapping.- Trapping during Growth from Solution.- Trapping during Growth from a Melt.- Aspects of High-Speed Solid-Solution Crystal Growth.- Formation of Metastable Phases in a Rapidly Cooled Melt.- Trends in the Formation of Supersaturated Solid Solutions at High Crystal Growth Rates.- The Distribution Constant in Hydrothermal Quartz Growth.- Dope Uptake Factor in Relation to Growth Rate and Surface Inclination.- Impurity Trapping in the Movement of a Short Elementary Step.- Growth Conditions and Structured Nitrogenous Inclusions in Diamond.- Effects of Isomorphous Replacement on Some Properties of Synthetic Diamonds.

巻冊次

v. 14 ISBN 9780306181146

内容説明

The present volume continues the tradition of previous issues in covering all the main divisions in the science of crystal growth: growth from vapor, solution, and melt. At the same time, it reflects the recent tendency to more detailed research on solid -state crystal- lization. In compiling the collection, preference has been given to papers that not only present novel scientific results but also contain surveys of the published data, although certain of the papers are purely original ones and some are purely of review character. The need for these surveys is dictated by at least two circumstances. First, there is an ongoing expan- sion of specialized publications on crystal growth and, correspondingly, there is an increase in the volume of the publications requiring review. Second, rapid advances in crystal mak- ing for various purposes (particularly microelectronics and quantum electronics) have meant that many important facts and observations on crystal formation are dispersed in numerous unspecialized publications and thus in part are lost to fundamental science.

巻冊次

v. 15 ISBN 9780306181153

内容説明

The present volume of this series, following the tradition of the previous volumes, covers three major lines of research on crystallization: growth from vapor and epitaxy, growth from solution, and growth from melt. As in the previous volumes, preference is given to papers that provide original results and reviews of results obtained by the authors and those from published sources, although some of the papers are either purely original or purely of review character. The first section deals with crystal growth from vapor and epitaxy and contains three papers. One of them, on artificial epitaxy, discusses and reviews published results from the last three years in this rapidly developing area. The results are used in outlining mechanisms for oriented film growth on amorphous substrates. Another paper in this section deals with classical epitaxy, namely oriented growth on single-crystal substrates, where some important conclusions are drawn from the growth of gallium nitride films on sapphire, which concern the orientation relationships in that pair of substances. The last paper in the section deals with film growth under ion bombardment (the corresponding techniques in film crystallization have already advanced from theory to practical applications).

巻冊次

v. 16 ISBN 9780306181160

内容説明

Papers from the Sixth All-Union Conference on Growth of Crystals comprise Volume 16 of this series. The articles were chosen with a view to more fully elucidate the basic problems of crystal growth as reflected in domestic and foreign reviews and in original studies. This volume consists of six parts. Part I is devoted to mechanisms of crystal growth that are important for production of materials with given properties. This part examines the temporal evolution of an inhomogeneous state and the array of semicellular and eutectic structures during microstructure formation, the effect of impurity on the nonequi librium vacancy concentration in a growing crystal, and the role of soluble and insoluble impurities in the birth and growth of crystals. Part II deals with the synthesis and electrophysical properties of novel solid electrolytes that are promis ing for practical use, analysis and correlation of the large amount of data on growth by the Bridgman-Stockbar ger method of single crystals of fluorite phases far from stoichiometry, and the hydrothermal chemistry and growth of hexagonal germanium dioxide.

目次

• I. Mechanisms of Crystal Growth from the Melt.- Evolution and Selection during Growth of Semicellular and Eutectic Patterns.- Effect of an Impurity on the Nonequilibrium Vacancy Concentration in a Growing Crystal.- Effect of Soluble and Insoluble Additives on the Crystallization of Metals from the Melt.- II. Growth of Crystals from Melts and High-Temperature Solutions.- Synthesis and Electrophysical Properties of Superionic Conductors Li3M2(PO4)3 (M = Fe, Sc, Cr).- Preparation of Single Crystals of the Nonstoichiometric Fluorite Phases M1_xRxF2+x (M = Ca, Sr, Ba
• R = Rare Earth Elements) by the Bridgman-Stockbarger Method.- Hydrothermal Chemistry and Growth of Hexagonal Germanium Dioxide.- III. Crystallization of Films.- Liquid-Phase Electroepitaxy.- Molecular Beam Epitaxy of Semiconductor, Metal, and Dielectric Film.- Relation between Growth Conditions, Structure, and Cathodoluminescence of Epitaxial Layers of ZnSe on GaAs.- Kinetics of Gallium Arsenide Doping in Gas-Phase Epitaxy.- Photostimulated Growth of Doped Lead Telluride.- IV. Crystallization of Biological Substances.- Crystallization of Ribosomes, Ribosomal Subunits, and Individual Ribosomal Proteins.- Chromatographie Methods of Purification and Crystallization of Spherical Viruses.- V. Experimental Methods for Studying Crystallization Processes.- Study of Melt Structure and Crystallization Processes by High-Temperature Raman Spectroscopy.- Acoustic Emission Study of Crystallization from the Melt. A Problem of Identification.- Electron Microscopy in Studies of Defect Formation Processes in Semiconducting Crystals.- VI. Mathematical Modeling and Regulation of Crystallization Processes.- Computational Experimentation in Studies of Crystallization Processes.- Mathematical Modeling of Melt Hydrodynamics in the Bridgman Crystallization Process with Accelerated Crucible Rotation.- Electromagnetic Methods for Influencing the Hydrodynamics and Heat and Mass Transfer during Growth of Large Single Srystals (Review).

巻冊次

v. 17 ISBN 9780306181177

内容説明

This volume, as the previous ones, consists primarily of review artic1es. However, it also contains a large quantity of original material on the growth of crystals and films. Priority is given to experimental work. Only two artic1es are concerned exc1usively with the theory of crystal growth. Theoretical aspects are treated in several others. This volume is divided into three parts. Part I, "Epitaxy and Transformations in Thin Films," stems from the current broad application of lasers and optical effects in general to crystal growth (in particular, the growth of thin films). The first three artic1es of the book are devoted to this topic. In particular, the laser pulse vaporization method, for which a comparatively slow deposition rate is typical (which should not always be viewed as a drawback), is distinguished by the unique kinetics of the initial growth stages. These are not entirely explained. However, this method is completely suitable for oriented or generally ordered growth of films under otherwise equal conditions. Another artic1e of this section is based on use of ultrashort (down to picosecond) laser pulses. It emphasizes the nonequilibrium processes of crystallization and decrystallization that are characteristic for such influences. In particular, material heated above its melting point and metastable states in the semiconductor melt exhibit these qualities.

目次

1. Epitaxy and Transformations in Thin Films.- Structural and Phase Transformations in Films Deposited Using Laser Plasma.- Melting and Crystallization of Semiconductors Using Pulsed Lasers.- Photostimulated Epitaxy.- Growth of Polycrystalline Germanium Films on Insulating Substrates.- Structural Changes and Mass Transfer in Elastically Strained Films.- Solid-State Transformations Induced by Boundary Migrations.- Explosive Crystallization of Amorphous Substances with Fixed Crystallites.- Growth of Crystals in Films with an Amorphous Component during Solid-State Reactions.- Decomposition of a Solid Solution on the Surface of Lithium Niobate Crystals: Structure, Morphology, and Mutual Orientation of Phases.- II. Growth of Crystals from Solution.- Growth and Dissolution as Studied by Liquid Inclusion Migration.- Structural Analogs of ?-Quartz — Aluminum and Gallium Orthophosphates.- Growth Rate Problems of KDP Type Single Crystals.- Growth of Single Crystals of Rare Earth Phosphates.- III. Growth of Crystals from the Melt.- Imputity Diffusion in a Crystal Growing Near the Stepped Interfacial Surface.- Lateral Impurity Segregation in Crystals Grown from the Melt.- Cellular Substructures in Single Crystalline Solid Solutions of Inorganic Fluorides Having the Fluorite Structure.- Faceting of Silicide and Germanide Crystals Grown from the Melt.- Gas Inclusions during Crystallization from the Melt.- Dislocation Structures in Metallic Single Crystals Grown from the Melt.- In Memory of N. N. Sheftal’.

巻冊次

v. 18 ISBN 9780306181184

内容説明

This 18th volume of the series includes invited papers from the Seventh All-Union Conference on the Growth of Crystals and the Symposium on Molecular-Beam Epitaxy that were held in Moscow in November, 1988. In choosing papers, the Program Committee of the conference gave priority to studies in rapidly emerging areas of the growth and preparation of crystalS and crystalline films. The qualifications of the authors were also consid ered. This ensured that the material was of a high standard and that the problems discussed covered a wide range. These are the same criteria that, we hope, are typical of the volumes of this series. The articles of the present volume are divided into four sections: I. Processes on the growth surface. II. Molecular-beam epitaxy. III. Growth of crystals and films from solutions and fluxes. N. Growth of crystals from the melt. Following tradition, the series opens with three theoretical articles. These examine problems applicable to various crystallization media: instability of the crystallization front (for a more general case than before and for a comparatively complicated system, a solution), adsorption and migration of atoms and molecules (the analysis is made on a quantum-chemical level), and the kinetics of step and dislocation growth in the presence of surface anisotropy as well as impurity adsorption (several earlier known methods are summarized). The next two articles are experimental and methodical.

目次

• Processes on Growth Surfaces: Concentrational Instability of the Interface
• A.G. Ambrok, E.V. Kalashnikov. HighResolution Transmission Electron Microscopic Study of Epitaxial Layers
• N.A. Kiselev, et al. MolecularBeam Epitaxy: MolecularBeam Epitaxy of Silicon
• S.I. Stenin, et al. Molecular Epitaxy of A3GBP/YYGBP5 Compounds
• Yu. O. Kanter, A.I. Toropov. Growth of Crystals and Films from Solutions and Fluxes: Controlled Flux Growth of Complex Oxide Single Crystals
• G.A. Emel'chenko, et al. Modelling and Control of Heat and Mass Transfer During Liquid Epitaxy
• N.A. Verezub, V.I. Polezhaev. Growth of Crystals from the Melt: Aggregation of Point Defects in Silicon Crystals Growing from the Melt
• V.V. Voronkov. Interaction of Crystals Growing in the Melt with Inclusions and Concentration Inhomogeneities
• O.P. Fedorov. 9 additional articles. Index.

巻冊次

v. 19 ISBN 9780306181191

内容説明

Volume 19 includes articles on growth of crystals from the vapor, from the melt, and from fluxes, as well as a section on actual structure of crystals and films relative to growth conditions.

目次

• Crystal Surfaces and Growth of Crystals from the Vapor: Equilibrium and Stationary Shapes of Heated Metallic Crystals in a Strong Electric Field
• Yu.A. Vlasov, et al. Growth Surface as a Vacancy Generator in Vacuum Condensation
• V.M. Kosevich, et al.. Growth of Crystals from the Melt: Optimization of Growth Conditions of Shaped Crystals
• P.I. Antonov. Vibrational Convection during the Growth of Crystals
• E.V. Zharikov, et al. Growth of Crystals and Films from Fluxes: Growth of Crystals of Beryllium Oxides and Silicates Using Fluxes
• G.V. Bukin. Flux Growth and Properties of Oxide Crystals
• V.I. Voronkova, et al. Actual Structure of Crystals and Films Relative to Growth Conditions: Electrically Active Defects of Silicon Crystals
• A.N. Buzynin, et al. Characteristic Defects and Imperfections in KDP Crystals Grown at High Rates
• I.L. Smol'skii, N.P. Zaitseva. 7 additional articles. Index.

巻冊次

v. 20 ISBN 9780306181207

内容説明

In keeping with tradition, this collection covers three principal crystallization methods: from the vapor, solution, and the melt. The five articles of the first part are concerned with heterostructure formation. O. P. Pchelyakov and L. V. Sokolov report on controlled growth of nanostructures in the Si-Ge system using an array of modern analytical tools to follow the process in situ. A different method for growing quantum-sized Si-Ge structures is used by Mil'vidskii et al., chemical deposition of hydrides from the vapor. Stresses and misfit dislocations in the resulting heterostructures are thoroughly investigated. The theoretical work of E. M. Trukhanov examines the formation mechanism of long-range stresses that produce r -shaped cracks during the growth of thick Ge-Si films. The reasons for the manifestation of macro defects connected with the generation of twins in HgCdTe films are unraveled by Yu. G. Sidorov et al. The conditions under which films with a low defect density grow are found. The preparation of highly oxidized amorphous Nb films and the structures formed during the crystallization of these films are reported by A. A. Sokol et al. Growth from solutions is the subject of the four articles in the second part.

目次

Heterostructure Formation in Molecularbeam and Gasphase Epitaxy: Direct Synthesis of Nanostructures in the Germanium- Silicon System by Molecularbeam Epitaxy (O.P. Pchelyakov, L.V. Sokolov). Heterostructures and Strained Superlattices in the Ge-Si System: Growth, Structure, Defects, and Electronic Properties (M.G. Mil'vidskii et al.). Longrange Stresses and Their Effects on Growth of Epitaxial Films (E.M. Trukhanov). Growth of and Defect Formation in CdxHg1xTe Films during Molecularbeam Epitaxy (Yu.G. Sidorov et al.). Structure of Amorphous Nb Oxide Films and Their Crystallization (A.A. Sokol et al.). Growth of Crystals in Lowtemperature and Hydrothermal Solutions: Morphological Stability of a Linear Step in the Presence of a Mobile Adsorbed Impurity (V.V. Voronkov). Growth Kinetics and Bipyramidface Morphology of KDP Crystals (L.N. Rashkovich, G.T. Moldazhanova). Growth and Certain Properties of KDP Crystals Affected by pH and Temperature (V.A. Kuznetsov et al.). KOH-ZrO2-SiO2-H2O Hydrothermal System: Formation of Potassium Zirconosilicates and Crystallochemical Correlations among Them (G.D. Ilyushin, L.N. Dem'yanets). Growth of Crystals from the Melt: Compositions of Congruently Melting Threecomponent Solid Solutions Determined by Finding Acnodes on Ternarysystem Fusion Surfaces (P.P. Fedorov). Coriolis Force on Melt Convection during Growth of Crystals in a Centrifuge and under Weightlessness (V.S. Yuferev). Convectioninduced Effects in the Stepheater Stockbarger Growth of CaF2 Crystals: Growthfront Shape (N.A. Verezub et al.). Crystallization Front Structure during Growth of Single Crystals from a Melt in Various Crystallographic Directions (O.P. Fedorov, E.L. Zhivolub). Growth, Detwinning, and Properties of YBa2Cu3Ox and TmBa2Cu3Ox Single Crystals (V.I. Voronkova, V.K. Yanovskii). Index.

巻冊次

v. 21 ISBN 9780306181214

内容説明

Growth of Crystals, Volume 21 presents a survey, with detailed analysis, of the scientific and technological approaches, and results obtained, by leading Russian crystal growth specialists from the late 1990's to date. The volume contains 16 reviewed chapters on various aspects of crystal and crystalline film growth from various phases (vapour, solution, liquid and solid). Both fundamental aspects, e.g. growth kinetics and mechanisms, and applied aspects, e.g. preparation of technically important materials in single-crystalline forms, are covered. A large portion of the volume is devoted to film growth, including film growth from eutectic melt, from amorphous solid state, kinetics of lateral epitaxy and film growth on specially structured substrates. An important chapter in this section covers heteroepitaxy of non-isovalent A3B5 semiconductor compounds, which have important applications in the field of photonics. The volume also includes a detailed analysis of the structural aspects of a broad range of laser crystals, information that is invaluable for successfully growing perfect, laser-effective, single crystals.

目次

• Growth and Doping of Semiconductor Compounds: Kinetics of Incorporation Processes at Kink Sites
• Yu.Yu. Hervieu, M.P. Ruzaikin. Gas-Phase Growth Kinetics and Morphology of Lead and Germanium Telluride Crystals
• L.V. Yashina, V.I. Dernovskii, V.P. Zlomanov, V.I. Shtanov. Lateral Epitaxy of Gallium Arsenide by Chloride Vapor Transport
• I.V. Ivonin, L.G. Lavrent'eva, L.P. Porokhovnichenko. Growth and Structure of Si Epilayers on Porous Si
• A.A. Fedorov, M.A. Revenko, E.M. Trukhanov, S.I. Romanov, A.A. Karanovich, V.V. Kirienko, M.A. Lamin, A.K. Gutakovskii, O.P. Pchelyakov, L.V. Sokolov. Heteroepitaxy of Heterovalent Compounds: Molecular Beam Deposition of ZnSe on GaAs
• M.V. Yakushev, Yu.G. Sidorov, L.V. Sokolov, V.G. Kesler, L.M. Logvinskii, T.A. Gavrilova. Effect of Crystallographic Orientation of the Interface on the Growth of Perfect Epitaxial Layers of Semiconductors
• E.M. Trukhanov, A.V. Kolesnikov, G.A. Lyubas. InGaAsP Solid Solutions: Phase Diagrams, Growth from the Melt on GaAs Substrates, Elastically Strained Epitaxial Layers
• Yu.B. Bolkhovityanov, A.S. Yaroshevich, M.A. Revenko, E.M. Trukhanov. Theory of Island Film Growth from a Eutectic Melt at the Late Stage of Evolution
• S.A. Kukushki, D.A. Grigor'ev. Self-Sustained Nuclei-Assisted Explosive Crystallization
• V.P. Koverda, V.N. Skokov. Morphological Instability and Inclusion Formation during Crystal Growth from a Flowing Solution
• S.Yu. Potapenko. Mechanisms of Striation Formation in Layer Growth of Crystals from Solutions
• I.L. Smolsky, A.E. Voloshin, E.B. Rudneva, N.P. Zaitseva, J. De Yoreo. Block Formation and Crystallographic Orientation Changes during Growth of Shaped Sapphire Single Crystals
• P.I. Antonov, S.I. Bakholdin, V.M. Krymov, I.L. Shul'pina, M.P. Shcheglov. Revised Phase Diagrams of LiF-RF3 (R = La-Lu, Y) Systems
• P.P. Fedorov, B.P. Sobolev, L.V. Medvedeva, B.M. Reiterov. The Growth of Laser Oxide Crystals: Structural Aspects
• E.V. Zharikov, G.M. Kuz'micheva, S.G. Novikov. Vibrational Control of Czochralski Crystal Growth
• A.Z. Myal'dun, A.I. Prostomolotov, N.K. Tolochko, N.A. Verezub, E.V. Zharikov. Ingrown Regular Domain Structure and Impurity Distribution in LiNbO3 Doped with a Rare Earth (Nd,Eu) and Magnesium
• I.I. Naumova, N.F. Evlanova, O.A. Gliko, A.A. Lukashev, S.V. Lavrishchev.

「Nielsen BookData」 より

詳細情報

• NII書誌ID(NCID): BA00079536
• ISBN:
  • 0306181096
  • 030618110X
  • 0306181118
  • 0306181126
  • 0306181134
  • 0306181142
  • 0306181150
  • 0306181169
  • 0306181177
  • 0306181185
  • 0306181193
  • 0306181207
  • 0306181215
• LCCN: 58001212
• 出版国コード: us
• タイトル言語コード: eng
• 本文言語コード: eng
• 原本言語コード: rus
• 出版地: New York
• ページ数/冊数: v.
• 大きさ: 28 cm