Gallium arsenide and related compounds 1985 : proceedings of the Twelfth International Symposium on Gallium Arsenide and Related Compounds held in Karuizawa, Japan, 23-26 September 1985

Author(s)

• International Symposium on Gallium Arsenide and Related Compounds
• 藤本, 正友 フジモト, マサトモ

Bibliographic Information

Gallium arsenide and related compounds 1985 : proceedings of the Twelfth International Symposium on Gallium Arsenide and Related Compounds held in Karuizawa, Japan, 23-26 September 1985

edited by M. Fujimoto

（Institute of Physics conference series, no. 79）

Adam Hilger, 1986

Note

Includes index

Description and Table of Contents

Table of Contents

Bulk materials. Epitaxial growth (MBE). Epitaxial growth (OMVPE and others). Characterization. Photochemical processes. Process technologies. Growth processes for heterostructure. Superlattices and quantum wells. GaAs MESFETs. Heterostructure devices (HEMTs). Heterostructure devices (HBTs and others). Optoelectronic devices. Late news papers.

by "Nielsen BookData"

Details

• NCID: BA00831820
• ISBN:
  • 0854981705
• Country Code: uk
• Title Language Code: eng
• Text Language Code: eng
• Place of Publication: Bristol
• Pages/Volumes: xix, 759 p.
• Size: 24 cm
• Classification:
  • LCC : TK7871.15.G3
  • DC19 : 537.6/22
• Subject Headings:
  • PRECIS : Gallium arsenide semiconductors
  • LCSH : Gallium arsenide semiconductors
• Parent Bibliography ID:
  • BA00171324