Semiconductor device modeling with SPICE

Bibliographic Information

Semiconductor device modeling with SPICE

Paolo Antognetti, editor, Giuseppe Massobrio, coeditor

McGraw-Hill, c1987

  • : pbk

Available at  / 25 libraries

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Note

Includes bibliographical references and index

Description and Table of Contents

Table of Contents

PN-Junction.Bipolar Junction Transistor (BJT).Junction Field-Effect Transistor (JFET).The MOS Transistor.BJT Parameter Measurements.MOS Parameter Measurements.Noise and Distortion.The SPICE Program.Appendices: The Two-Terminal PN Structure.The Two-Terminal MOS Structure.

by "Nielsen BookData"

Details

  • NCID
    BA04490244
  • ISBN
    • 0070021074
    • 0070021538
  • LCCN
    87015306
  • Country Code
    us
  • Title Language Code
    eng
  • Text Language Code
    eng
  • Place of Publication
    New York ; Tokyo
  • Pages/Volumes
    xii, 389 p.
  • Size
    24 cm
  • Classification
  • Subject Headings
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