Defect complexes in semiconductor structures : proceedings of the international school held in Mátrafüred, Hungary, September 13-17, 1982
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書誌事項
Defect complexes in semiconductor structures : proceedings of the international school held in Mátrafüred, Hungary, September 13-17, 1982
（Lecture notes in physics, 175）
Springer-Verlag, 1983
- : gw
- : us
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注記
Lectures delivered at the International School on Defect Complexes in Semiconductor Structures, organized by the Research Institute for Technical Physics of the Hungarian Academy of Sciences
Includes bibliographical references and index
内容説明・目次
目次
A technologist's view on defects.- Characterization of impurities and defects by electron paramagnetic resonance and related techniques.- Review of the possibilities of electron microscopy in the identification of defect structures.- Electrical and optical measuring techniques for flaw states.- Theory of defect complexes.- Critical comparison of the theoretical models for anomalous large lattice relaxation in III-V compounds.- Vacancy related structure defects in SiO2 - Cyclic cluster calculations compared with experimental results.- A new model for the Si-A center.- Defect complexing in iron-doped silicon.- Photoluminescence of defect complexes in silicon.- Electron microscopical analysis of the stacking fault behaviour in inert-gas annealed Czochralski silicon.- Oxygen precipitation and the generation of secondary defects in oxygen-rich silicon.- Electrical and optical properties of oxygen-related donors in silicon formed at temperatures from 600 to 850 Degreesc.- On the field dependence of capture and emission processes at deep centres.- Lattice matched heterolayers.- Compositional transition layers in heterostructure.- Defect complexes in III-V compounds.- Low frequency current oscillations due to electron retrapping by the AsGa antisite defect in GaAs.- Main electron traps in gaas: Aggregates of antisite defects.- Defect reactions in gap caused by zinc diffusion.- Nonstatistical defect surroundings in mixed crystals - the selfactivated luminescence centre in ZnSxSe1-x.- Structure and properties of the Si-SiO2 interregion.- Radiation defects of the semiconductor-insulator interface.- Analysis of Si/SiO2 interface defects by the method of term spectroscopy.- Theoretical aspects of laser annealing.- Radiation methods for creation of heterostructures on silicon.- Ion beam gettering in GaP.- Panel discussion.- Mechanical stress induced defect creation in GaP.
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