Electronic transport in hydrogenated amorphous semiconductors
Author(s)
Bibliographic Information
Electronic transport in hydrogenated amorphous semiconductors
（Springer tracts in modern physics : Ergebnisse der exakten Naturwissenschaften / editor, G. Höhler, 114）
Springer-Verlag, c1989
- : us
- : gw
Available at / 37 libraries
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The Institute for Solid State Physics Library. The University of Tokyo.図書室
: gw420.8:S1:1147210000456
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Hokkaido University, Library, Graduate School of Science, Faculty of Science and School of Science図書
DC19:537.6/Ov22070117012
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Description and Table of Contents
Description
Currently this is the book providing a thorough introduction and a unified theoretical basis for the interpretation of equilibrium transport processes in amorphous hydrogenated tetrahydrally coordinated semiconductors - a topic of great interest to physicists and material scientists (first devices for practical applications are already being manufactured). Most of the relevant literature is reviewed with particular emphasis on the approach developed by the authors. It explains most of the experimental data and allows the extraction of information about microscopic transport processes and parameters from equilibrium transport data. This work treats electronic transport in the mentioned type of semiconductors and in particular in a-Si:H and a-Ge:H. From elementary concepts the theory is developed towards higher degrees of completeness and sophistication. Further refinements for coping with the complexity of real systems are given. The comparison of theory with experiment is an important part of the book.
Table of Contents
Elementary treatment of transport in amorphous semiconductors.- Review of transport experiments.- A transport theory for a homogenous model.- Detailed presentation of the theory.- The long-ranged random potential.- Temperature dependent reference energies.- The transport properties of hydrogenated amorphous semiconductors.- Concluding remarks.
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