Defect control in semiconductors : proceedings of the International Conference on the Science and Technology of Defect Control in Semiconductors, the Yokohama 21st century forum, Yokohama, Japan, September 17-22 1989
著者
書誌事項
Defect control in semiconductors : proceedings of the International Conference on the Science and Technology of Defect Control in Semiconductors, the Yokohama 21st century forum, Yokohama, Japan, September 17-22 1989
North-Holland , Distributors for the U.S. and Canada, Elsevier Science Pub., 1990
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- v. 2
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注記
Includes bibliographical references and index
内容説明・目次
内容説明
Defect control in semiconductors is a key technology for realizing the ultimate possibilities of modern electronics. The basis of such control lies in an integrated knowledge of a variety of defect properties. From this viewpoint, the volume discusses defect-related problems in connection with defect control in semiconducting materials, such as silicon, III-V, II-VI compounds, organic semiconductors, heterostructure, etc. The conference brought together scientists in the field of fundamental research and engineers involved in application related to electronic devices in order to promote future research activity in both fields and establish a fundamental knowledge of defect control. The main emphasis of the 254 papers presented in this volume is on the control of the concentration, distribution, structural and electronic states of any types of defects including impurities as well as control of the electrical, optical and other activities of defects. Due to the extensive length of the contents, only the number of papers presented per session is listed below.
目次
Volume 1. Parts: I. General (12 papers) . II. Silicon (7 papers). Sections: Grown-in Defects (7 papers). Oxygen-Related Defects (13 papers). Metallic Impurities and Gettering (9 papers). Defect Reactions and Passivation (20 papers). Defects Induced by Ion-implantation or Dry Etching (11 papers). Irradiation-induced Defects (7 papers). Defect Control and Device Performance (10 papers). III. Bulk Compounds. Grown-in Defects in III-V Compounds (11 papers). Native Defects and Impurities in III-V Compounds (9 papers). Defects Control through Thermal Treatments and Defect Passivation (15 papers). Defects Induced by Ion-implantation and Particle-irradiation (9 papers). Volume 2. IV. Thin Layers and Heterostructure. Defects in II-VI Compounds (7 papers). Native Defects and Impurities (10 papers). DX Center (6 papers). Structural Defects in Alloy Semiconductors (3 papers). Defects Associated with Heteroepitaxy (18 papers). Defects in Quantum Wells and Superlattices (6 papers). Defects and Device Performance (7 papers). Defect Control (8 papers). V. Dislocations and Deformation-Induced Defects. Dislocation Dynamics (9 papers). Electronic State (13 papers). VI. Defect Characterization (17 papers). VII. Organic Crystals. Structural Defects (9 papers). Electronic Defects (8 papers). Subject index. Author index.
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