Strained-Layer superlattices : materials science and technology
Author(s)
Bibliographic Information
Strained-Layer superlattices : materials science and technology
(Semiconductors and semimetals, vol. 33)
Academic Press, c1991
Available at 57 libraries
  Aomori
  Iwate
  Miyagi
  Akita
  Yamagata
  Fukushima
  Ibaraki
  Tochigi
  Gunma
  Saitama
  Chiba
  Tokyo
  Kanagawa
  Niigata
  Toyama
  Ishikawa
  Fukui
  Yamanashi
  Nagano
  Gifu
  Shizuoka
  Aichi
  Mie
  Shiga
  Kyoto
  Osaka
  Hyogo
  Nara
  Wakayama
  Tottori
  Shimane
  Okayama
  Hiroshima
  Yamaguchi
  Tokushima
  Kagawa
  Ehime
  Kochi
  Fukuoka
  Saga
  Nagasaki
  Kumamoto
  Oita
  Miyazaki
  Kagoshima
  Okinawa
  Korea
  China
  Thailand
  United Kingdom
  Germany
  Switzerland
  France
  Belgium
  Netherlands
  Sweden
  Norway
  United States of America
Description and Table of Contents
Description
The following blurb to be used for the AP Report and ATI only as both volumes will not appear together there.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this volume offers a comprehensive discussion of strained-layer superlattices and focuses on fabrication technology and applications of the material. This volume combines with Volume 32, Strained-Layer Superlattices: Physics, in this series to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.****The following previously approved blurb is to be used in all other direct mail and advertising as both volumes will be promoted together.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this two-volume survey offers a comprehensive discussion of the physics of strained-layer superlattices (Volume 32), as well as detailing fabrication technology and applications of the material (Volume 33). Although each volume is edited to stand alone, the two books combine to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.
Table of Contents
R. Hull and J.C. Bean, Principles and Concepts of Strained-Layer Epitaxy. W.J. Schaff, P.J. Tasker, M.C. Foisy, and L.F. Eastman, Device Applications of Strained-Layer Epitaxy. S.T. Picraux, B.L. Doyle, and J.Y. Tsao, Structure and Characterization of Strained-Layer Superlattices. E. Kasper and F. Schaffler. Group IV Compounds. D.L. Partin, Molecular Beam Epitaxy of IV*b1VI Compound Heterojunctions and Superlattices. R.L. Gunshor, L.A. Kolodziejski, A.V. Nurmikko, and N. Otsuka, Molecular Beam Epitaxy of II*b1VI Semiconductor Microstructures. References. Index.
by "Nielsen BookData"