Bipolar semiconductor devices
著者
書誌事項
Bipolar semiconductor devices
（McGraw-Hill series in electrical engineering, . Electronics and electronic circuits）
McGraw-Hill, c1990
- : pbk
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注記
Includes bibliographical references and index
Pbk.: "McGraw-Hill international editions"--Cover
Pbk.: 24 cm
内容説明・目次
- 巻冊次
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ISBN 9780070541207
内容説明
This text explains the theory and design of bipolar semiconductors. It focuses upon relating the device structure parameters to the device terminal characteristics. Complex theory is kept to a minimum while emphasis is upon providing practical information of direct use for design purposes.
目次
- Overview of basic semiconductor properties
- the PN and NN+ junction
- PN diodes
- transient and high frequency behaviour of diodes
- structure and theory of practical diodes
- photodetector diodes and solar cells
- bipolar transistors - basic structure and theory
- analysis with real impurity profiles - the emitter
- real impurity profiles - the base and collector regions
- high current effects in bipolar transistors
- transient behaviour of transistors
- discrete bipolar transistor structures
- integrated transistors
- advanced technology devices
- numerical analysis and CAD models of bipolar transistors.
- 巻冊次
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: pbk ISBN 9780071008877
内容説明
A text designed for graduate courses in bipolar semiconductors, which concentrates on theory and design, relating the device structure parameters to the device terminal characteristics.
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