Granular nanoelectronics
著者
書誌事項
Granular nanoelectronics
(NATO ASI series, Series B . Physics ; v. 251)
Plenum Press, c1991
大学図書館所蔵 全20件
  青森
  岩手
  宮城
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  福島
  茨城
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  埼玉
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  東京
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  新潟
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  石川
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  静岡
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  滋賀
  京都
  大阪
  兵庫
  奈良
  和歌山
  鳥取
  島根
  岡山
  広島
  山口
  徳島
  香川
  愛媛
  高知
  福岡
  佐賀
  長崎
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注記
"Proceedings based on a NATO Advanced Study Institute on Physics of Granular Nanoelectronics, held July 23-August 3, 1990, in Il Ciocco, Italy"--T.p. verso
"Published in cooperation with NATO Scientific Affairs Division."
Includes bibliographical references and index
内容説明・目次
内容説明
The technological means now exists for approaching the fundamentallimiting scales of solid state electronics in which a single carrier can, in principle, represent a single bit in an information flow. In this light, the prospect of chemically, or biologically, engineered molccular-scale structures which might support information processing functions has enticed workers for many years. The one common factor in all suggested molecular switches, ranging from the experimentally feasible proton-tunneling structure, to natural systems such as the micro-tubule, is that each proposed structure deals with individual information carrying entities. Whereas this future molecular electronics faces enormous technical challenges, the same Iimit is already appearing in existing semiconducting quantum wires and small tunneling structures, both superconducting and normal meta! devices, in which the motion of a single eh arge through the tunneling barrier can produce a sufficient voltage change to cut-off further tunneling current. We may compare the above situation with today's Si microelectronics, where each bit is encoded as a very !arge number, not necessarily fixed, of electrons within acharge pulse. The associated reservoirs and sinks of charge carriers may be profitably tapped and manipulated to proviele macro-currents which can be readily amplified or curtailed. On the other band, modern semiconductor ULSI has progressed by adopting a linear scaling principle to the down-sizing of individual semiconductor devices.
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