Electronic structure and properties of semiconductors

Author(s)

• Cahn, R. W. (Robert W.)
• Haasen, P. (Peter)
• Kramer, E. J. (Edward J.)
• Schröter, W. (Wolfgang)

Bibliographic Information

Electronic structure and properties of semiconductors

volume editor, Wolfgang Schröter

（Materials science and technology : a comprehensive treatment / edited by R.W. Cahn, P. Haasen, E.J. Kramer, vol. 4）

VCH, c1991

• : gw
• : us

Note

Includes bibliographical references and index

Description and Table of Contents

Description

This handbook, number four in an extended treatment of materials science and technology, is specifically concerned with the electron structure and the properties of semiconductors. The book is illustrated and offers considerable tabulated information.

Table of Contents

• Band theory applied to semiconductors, M. Lannoo
• optical properties and charge transport, R.G. Ulbrich
• intrinsic point defecta in semiconductors, G. Watkins
• deep centers in semiconductors, H. Feichtinger
• equilibria, nonequilibria, diffusion and precipitation, U.M. Gasele and T.Y. Tan
• dislocations, H. Alexander and H. Teichler
• grain boundaries in semiconductors, J.L. Rouviere et al
• interfaces, A. Ourmazd et al
• the hall effect in quantum wires, A.M. Chang
• material properties of hydrogenated amorphous silicon, R.A. Street and K. Winer
• high - temperature properties of 3d - transition elements in silicon, W. Schroter et al.

by "Nielsen BookData"

Details

• NCID: BA13514434
• ISBN:
  • 3527268170
  • 0895736926
• Country Code: gw
• Title Language Code: eng
• Text Language Code: eng
• Place of Publication: Weinheim, FDR ; New York
• Pages/Volumes: 603 p.
• Size: 25 cm
• Classification:
  • NDC7 : 501.4
• Subject Headings:
  • LCSH : Materials
• Parent Bibliography ID:
  • BA11923352