Preparation and properties
Author(s)
Bibliographic Information
Preparation and properties
(Handbook of electronic materials, v. 3 . Silicon nitride for microelectronic applications ; pt. 1)
IFI/Plenum, 1971
Available at 14 libraries
  Aomori
  Iwate
  Miyagi
  Akita
  Yamagata
  Fukushima
  Ibaraki
  Tochigi
  Gunma
  Saitama
  Chiba
  Tokyo
  Kanagawa
  Niigata
  Toyama
  Ishikawa
  Fukui
  Yamanashi
  Nagano
  Gifu
  Shizuoka
  Aichi
  Mie
  Shiga
  Kyoto
  Osaka
  Hyogo
  Nara
  Wakayama
  Tottori
  Shimane
  Okayama
  Hiroshima
  Yamaguchi
  Tokushima
  Kagawa
  Ehime
  Kochi
  Fukuoka
  Saga
  Nagasaki
  Kumamoto
  Oita
  Miyazaki
  Kagoshima
  Okinawa
  Korea
  China
  Thailand
  United Kingdom
  Germany
  Switzerland
  France
  Belgium
  Netherlands
  Sweden
  Norway
  United States of America
Note
Includes bibliographical references
Description and Table of Contents
Description
The large amount of literature on the technology of thin film silicon nitride indi- cates the interest of the Department of Defense, NASA and the semiconductor industry in the development and full utilization of the material. This survey is concerned only with the thin film characteristics and properties of silicon nitride as currently utilized by the semiconductor or microelectronics industry. It also includes the various methods of preparation. Applications in microelectronic devices and circuits are to be provided in Part 2 of the survey. Some bulk silicon nitride property data is included for basic reference and comparison purposes. The survey specifically excludes references and information not within the public domain. ACKNOWLEDGEMENT This survey was generated under U.S. Air Force Contract F33615-70-C-1348, with Mr. B.R. Emrich (MAAM) Air Force Materials Laboratory, Wright-Patterson Air Force Base, Ohio acting as Project Engineer. The author would like to acknowledge the assis- tance of Dr. Judd Q. Bartling, Litton Systems, Inc., Guidance and Control Systems Division, Woodland Hills, California and Dr. Thomas C.
Hall, Hughes Aircraft Company, Culver City, California in reviewing the survey. v CONTENTS Preface. i Introduction 1 Literature Review. 1 Bulk Characteristics 1 Technology Overview. 2 References 4 Methods of Preparation * 5 Introduction * 5 Direct Nitridation Method 8 Evaporation Method * 9 Glow Discharge Method. 10 Ion Beam Method. 13 Sputtering Methods 13 Pyrolytic Methods. 15 Silane and Ammonia Reaction 15 Silicon Tetrachloride and Tetrafluoride Reaction. 24 Silane and Hydrazine Reaction 27 Production Operations. 28 Equipment.
Table of Contents
Methods of Preparation.- Properties.- Silicon Nitride-Silicon Dioxide Combinations.
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