Preparation and properties
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Bibliographic Information
Preparation and properties
（Handbook of electronic materials, v. 3 . Silicon nitride for microelectronic applications ; pt. 1）
IFI/Plenum, 1971
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Includes bibliographical references
Description and Table of Contents
Description
The large amount of literature on the technology of thin film silicon nitride indi- cates the interest of the Department of Defense, NASA and the semiconductor industry in the development and full utilization of the material. This survey is concerned only with the thin film characteristics and properties of silicon nitride as currently utilized by the semiconductor or microelectronics industry. It also includes the various methods of preparation. Applications in microelectronic devices and circuits are to be provided in Part 2 of the survey. Some bulk silicon nitride property data is included for basic reference and comparison purposes. The survey specifically excludes references and information not within the public domain. ACKNOWLEDGEMENT This survey was generated under U.S. Air Force Contract F33615-70-C-1348, with Mr. B.R. Emrich (MAAM) Air Force Materials Laboratory, Wright-Patterson Air Force Base, Ohio acting as Project Engineer. The author would like to acknowledge the assis- tance of Dr. Judd Q. Bartling, Litton Systems, Inc., Guidance and Control Systems Division, Woodland Hills, California and Dr. Thomas C.
Hall, Hughes Aircraft Company, Culver City, California in reviewing the survey. v CONTENTS Preface. i Introduction 1 Literature Review. 1 Bulk Characteristics 1 Technology Overview. 2 References 4 Methods of Preparation * 5 Introduction * 5 Direct Nitridation Method 8 Evaporation Method * 9 Glow Discharge Method. 10 Ion Beam Method. 13 Sputtering Methods 13 Pyrolytic Methods. 15 Silane and Ammonia Reaction 15 Silicon Tetrachloride and Tetrafluoride Reaction. 24 Silane and Hydrazine Reaction 27 Production Operations. 28 Equipment.
Table of Contents
Methods of Preparation.- Properties.- Silicon Nitride-Silicon Dioxide Combinations.
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