Principles and technology of MODFETs

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Bibliographic Information

Principles and technology of MODFETs

H. Morkoç, H. Unlu, and G. Ji

（Design and measurement in electronic engineering）

Wiley, c1991

  • v. 1
  • v. 2

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Includes bibliographical references and indexes

Description and Table of Contents

Volume

v. 1 ISBN 9780471929208

Description

Since the invention of the transistor, there has been a great deal of activity and progress in semiconductor technology and understanding, particularly in new heterostructures and superlattices as well as devices based on them. With the development of high quality SiO2 on Si having low interface state densities, MOSFET devices relying on the high mobility two dimensional electron became available in the 1960s and represent the workhorse of integrated circuits today. Two-dimensional electron gas, similar to that in MOSFETs, can also be obtained at GaAs/AlGaAs interfaces which provides even higher mobility, higher velocity and a lattice matched interface. MOSFET-like devices, called MODFETs, have already achieved switching speeds of about 5 Ps at 77K, current gain cut-off frequencies of about 250 GHz and maximum oscillation frequencies of about 400 GHz. In addition to GaAs/AIGaAs on GaAs, the strained system of InGaAs/AIGaAs on GaAs and the InGaAs/InAlAs system on InP substrates have been investigated. In fact, the InP system, at the time of this writing, held the milimeter wave fT current gain cut-off frequency record and yielded extremely low-noise operation, 1dB at 60 Ghz for 0.2 mu gate lengths. In this book, fundamentals, technology and performance of MODFETs, both as microwave and digital devices, are treated in detail. In addition, introductory material particularly that dealing with semiconductor and heterojunction physics, where applicable, is also provided. The book is arranged into two volumes with a total of nine chapters. Volume 1 contains Chapters 1 to 5, and Volume 2 covers Chapters 6 to 9.

Table of Contents

  • Part 1 Developments in heterostructure high speed devices: synthesis of thin film heterostructures based on III-V compounds
  • superlattices and quantum wells
  • two dimensional electron gas (2DEG) - Hall effect
  • applications to high-speed devices - modulation doped field effect transistors, meterojunction bipolar transistors (HBTs). Part 2 The technology of growth and fabrication of MODFETS: growth of thin film heterostructures by MBE
  • basics of the MBE process
  • MBE equipment
  • substrate preparation and growth of MDHs - growth on GaAs substrates, growth on Si and Ge substrates
  • in-situ characterization of heteroepitaxial layers - alloy composition control, interface quality control
  • ex-situ characterization of heteroepitaxial layers - transmission electron microscopy (TEM) technique, optical techniques
  • defects associated with the misfit accommodation - growth morphology, stability of heteroepitaxial layers
  • fabrication of modulation doped FETS
  • metal-semiconductor contacts - capacitance-voltage characteristics of Schoffky diodes, current-voltage (I-V) characteristics, barrier heights, ohmic contacts
  • the contract resistance measurement. Part 3 Properties of heterostructures in equilibrium: the materials properties of binary III-V compounds - crystal structure properties, sites, directions and planes in a crystal, energy bands and dispersion relation (k.p theory)
  • the thermodynamics of interfaces - thermodynamic potentials of single phase, themodynamic equilibrium across the interfaces
  • superlattice bank structure in the envelope function approximation
  • stress and strain in thin heterostructure films - strain from the differences of the thermal expansion, strain effects due to lattice mismatch
  • strain effects on the electronic properties of heterostructures - strain effects on the energy bandgaps, envelope function approximation in strain layer superlattices, effect of strain on the carrier densities
  • charge neutrality and position of the fermi-level
  • built-in potential
  • band disontinuities - theoretical predictions, experimental measurements, electrical measurements. Part 4 Modulation doped heterostructures in equilibrium: general background
  • properties of two-dimensional structures
  • two-dimensional electron gas concentration
  • approximate analytic solutions
  • self-consistent solution for single heterostructures
  • self-consistent solutions for arbitrary heterostructures
  • discussions. Part contents.
Volume

v. 2 ISBN 9780471929321

Description

Since the invention of the transistor, there has been a great deal of activity and progress in semiconductor technology and understanding, particularly in new heterostructures and superlattices as well as devices based on them. With the development of high quality SiO2 on Si having low interface state densities, MOSFET devices relying on the high mobility two dimensional electron became available in the 1960s and represent the workhorse of integrated circuits today. Two-dimensional electron gas, similar to that in MOSFETs, can also be obtained at GaAs/AlGaAs interfaces which provides even higher mobility, higher velocity and a lattice matched interface. MOSFET-like devices, called MODFETs, have already achieved switching speeds of about 5 Ps at 77K, current gain cut-off frequencies of about 250 GHz and maximum oscillation frequencies of about 400 GHz. In addition to GaAs/AIGaAs on GaAs, the strained system of InGaAs/AIGaAs on GaAs and the InGaAs/InAlAs system on InP substrates have been investigated. In fact, the InP system, at the time of this writing, held the milimeter wave fT current gain cut-off frequency record and yielded extremely low-noise operation, 1dB at 60 Ghz for 0.2 mu gate lengths. In this book, fundamentals, technology and performance of MODFETs, both as microwave and digital devices, are treated in detail. In addition, introductory material particularly that dealing with semiconductor and heterojunction physics, where applicable, is also provided. The book is arranged into two volumes with a total of nine chapters. Volume 1 contains Chapters 1 to 5, and Volume 2 covers Chapters 6 to 9. In Volume 2, Chapter 6 is devoted mainly to the experimental and technological aspects of two dimensional transport. Chapter 7 treats the two dimensional electron gas properties under the influence of external field, such as that found in MODFETs. Chapter 8 covers the particulars of MODFETs with respect to microwave/millimeter wave performance issues. Models for noise and equivalent circuit parameters as well as the performance of various MODFETs are discussed. Finally, Chapter 9 makes an attempt to cover the ever-evolving digital performance of MODFETs. Unlike the microwave/millimeter wave area, the choice of device for digital applications is not very clear and often application dependent. As a result, a great deal of effort is expended to compare MODFETs with other devices in several key application area along with projections. The data included in Chapters 8 and 9 are those obtained up to the middle of 1989.

Table of Contents

  • Part 6 Measurements of transport properties of modulation doped heterostructures: Hall effect measurements
  • interpretation of Hall measurements
  • experimental Hall mobilities in (AI, Ga) As/GaAs MDHs - single interface structures, multiple interface structures
  • experimental 2DEG density in AI,Ga) As/GaAs MDHs
  • influences of substrate temperature on transport properties - ternary on top of binary - normal structures, binary on top of ternary - inverted structures
  • the Dx centre effects in (AI, Ga) As/GaAs MDHs
  • (AI,Ga) As/(In,Ga) As and (In,AI) As/(in,Ga)As MDHs
  • high field electron mobility in MDHs
  • high field electron volocity in MDHs - theoretical determination, experimental measurements. Part 7 Non-equilibrium characteristics of modulation loped fets: charge - voltage characteristics
  • current - voltage (I-V) characteristics - normal regime, parallel conduction in the barier layer
  • comparison with experimental I-V characteristics
  • capacitance - voltage characteristics
  • quasi-fermi level bending and its effect on Fet characteristics
  • charge - voltage characteristics for invected modfets
  • anomalies at low temperature
  • (In,Ga) As/ (AI,Ga) as Modfet performance
  • optimization
  • enhanced Schottky barrier for Modfets. Part 8 Microwave characteristics of Modfets: device performance
  • microwave modeling - small-signal model, large-signal model
  • wave equation model - derivation of the wave-equation, solution of the wave equation, Y-parameter calculations, extraction of parameters needed for the AC model, comparison of the measured and calculated data, limitations of the microwave model
  • noise modelling - the DC Fet model, Fet noise modeling, optimization of device parameters, evaluation of noise figures versus frequency, noise temperature. Part 9 Digital integrated circuits: basic inverters
  • GaAs circuits - direct-coupled Fet logic (DCFL), buffered Fet logic (BFC), Schottky diode Fet logic (SDFL), source-coupled Fet logic (SCFL)
  • modfet digital integrated circuits
  • design and simulation of Modfet ICs - precursor logic circuits, comparator circuits, static-random access memory (SRAM) circuits, gate arrays
  • short-channel effects
  • radiation effects - radiation hardness of Modfest, radiation hardness of Modfet inverters and ring oscillators
  • comparison with other technologies - ring oscillators, frequency divider, static random access memory (SRAM), projections.

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