Barriers, junctions, surfaces, and devices

書誌事項

Barriers, junctions, surfaces, and devices

Karl W. Böer

(Survey of semiconductor physics / Karl W. Böer, v. 2)

Van Nostrand Reinhold, c1992

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注記

Bibliography: p. 1337-1388

Includes index

内容説明・目次

内容説明

Taking up where the first volume left off, this work provides coverage of the inhomogeneous semiconductor. It deals mainly with Si and GaAs, but also investigates other materials of theoretical and practical interest, such as Ge, other III-V and II-VI compounds, and amorphous SiH. Equipped with this source, physicists, semiconductor engineers, device engineers and fabrication engineers will have access to a vast reservoir of practical information on the design, production and operations of semiconductor devices. Containing references, summaries of mathematical tools, key equations and tables, and a detailed subject index of nearly 5000 entries, this volume aims to make specific information as easy to locate as it is to comprehend.

目次

Part I: Surface Properties. 1. Introduction. 2. Crystal Surfaces, An Introduction. 3. Surface Analysis. 4. Surface Structures. 5. Crystal Growth, Epitaxy. 6. Phononic Effects at Surfaces. 7. Electronic Surface and Interface States. 8. Semiconductor Interfaces and Contacts. 9. Electron Penetration through Surfaces. 10. Photon Penetration through Surfaces. 11. Surface Influence on Bulk Properties. Part II: Space-Charge Effects in Semiconductors. 12. Space Charges in Insulators. 13. Creation of Space-Charge Regions in Solids. 14. The Schottky Barrier. 15. Minority Carriers. 16. Minority Carrier Currents. 17. Schottky Barrier in Two-Carrier Model. 18. pn-Homojunctions. 19. Carrier Velocity Limitation. 20. Semiconductor Heterojunctions. 21. The Photovoltaic Effect. 22. The Schottky Barrier Photodiode. 23. The pn-Junction with Light. 24. The Heterojunction with Light. 25. The pin Junction with Light. 26. High-Field Domains. 27. Current Channels. Part III: Materials and Fabrication Technology. 28. Purification of Semiconductor Materials. 29. Crystallization and Device Shaping. 30. Doping and Junction Formation. 31. Electrodes. 32. Integrated Circuit Processing. Part IV: Semiconductor Devices. 33. Schottky Barriers and Devices. 34. Solar Cells. 35. Light Emitting Devices. 36. Transistors and Multiterminal Devices. 37. Semiconductors and Devices: An Epilogue. Part V: Appendix: Computation Routines and Tables. Bibliography. Word Index.

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詳細情報

  • NII書誌ID(NCID)
    BA18657552
  • ISBN
    • 0442006721
  • LCCN
    89021473
  • 出版国コード
    us
  • タイトル言語コード
    eng
  • 本文言語コード
    eng
  • 出版地
    New York
  • ページ数/冊数
    xlv, 1438 p.
  • 大きさ
    24 cm
  • 分類
  • 件名
  • 親書誌ID
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