Handbook of ion implantation technology
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Bibliographic Information
Handbook of ion implantation technology
North-Holland, 1992
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Ion implantation technology
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Includes bibliographical references and index
Description and Table of Contents
Description
Ion implantation is the primary technology which is used in the semiconductor industry to introduce impurities into semiconductors to form devices and VLSI circuits. All VLSI manufacturing includes ion implantation steps. The technology has universal acceptance because of the accuracy of the number of implanted atoms, and the uniformity of the implantation across large semiconductor wafers. This book is a tutorial presentation of the physics, processes, technology and operation of ion implantation. Its purpose is to serve as a teaching manual, a source book of relevant data, and a compilation of comments from some of the world's most experienced practitioners of ion implantation. The primary problems in using ion implantation in VLSI proces sing are wafer cooling, dielectric charging, particulate contamination and process control. Each of these problems is addressed in a separate chapter. Each section is described from first principles in simple tutorial steps, while keeping the goal of finding answers to the most modern and complex problems in VLSI processing.
Table of Contents
Ion implantation physics (J.F. Ziegler). Radiation damage and annealing in ion implantation (G. Guylai). Channeling effects in ion implantation (R. Simonton, A.F. Tasch). Process simulation and ion implantation (H. Glawischnig). Ion implantation applications in CMOS process technology (R. Simonton, F. Sinclair). New technologies for ion implantation (M.I. Current et al.). Safety considerations for ion implanters (H. Ryssel et al.). Ion source fundamentals (K.G. Stephens). Ion source operation and maintenance in a semiconductor production environment (R.B. Simonton). Photoresist and particulate problems (T.C. Smith). Wafer cooling and wafer charging in ion implantation (M.E. Mack). Process control for ion implantation (M.I. Current et al.). Contamination problems in ion implantation (H. Ryssel, L. Frey). Index.
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