Properties of lattice-matched and strained indium gallium arsenide
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Bibliographic Information
Properties of lattice-matched and strained indium gallium arsenide
（EMIS datareviews series, no. 8）
INSPEC, 1993
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Description and Table of Contents
Description
The semiconductor InGaAs (indium gallium arsenide) plays a pivotal role in the study of quantum systems which provide promising applications in the fields of microelectronics and optoelectronics. This reference explores recent developments with InGaAs. Leading researchers from the USA, Europe and Japan cover such issues as structural, thermal, mechanical and vibrational properties, the band structure of lattice-matched and strained alloys, transport and surface properties, radiative and non-radiative recombinations, expitaxial growth, doping, etching of InGaAs and related heterostructures, photodetectors, FETs, double heterostructure and quantum well lasers.
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