Defect recognition and image processing in semiconductors and devices : proceedings of the fifth international conference, Santander, Spain, 6-10 September 1993
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書誌事項
Defect recognition and image processing in semiconductors and devices : proceedings of the fifth international conference, Santander, Spain, 6-10 September 1993
（Institute of Physics conference series, no. 135）
Institute of Physics Pub., 1994
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注記
DRIP conference proceedings
Includes bibliographical references and indexes
内容説明・目次
内容説明
DRIP 5 was the fifth conference devoted to furthering the understanding of defect inhomogeneities in semiconductors and devices. The aim is to improve defect recognition so that structural inhomogeneities in both as-grown and processed semiconductors can be related to device performance.
Special emphasis is given to mapping and microscopic observation before and after processing to aid understanding of defect generation and the effect of defects on the reproducibility, reliability and yield of devices.
A valuable reference for researchers in electrical and electronic engineering and physics looking at the effects of defects on device performance.
目次
- Silicon: Silicon processing and atomic level defects (J M Poate et al)
- Characteristics of the as-grown defects in a CZ silicon crystal (H Furuya et al)
- On the characterization of the strain field of lattice defects in silicon with nanometer resolution (G F Janssens et al)
- Spatial distribution of defects and dopants in hydrogenated amorphous silicon measured by scanning isothermal capacitance transient spectroscopy (H Okushi et al)
- Mapping of oxidation stacking faults in CZ silicon wafers (T Yamamoto et al). Tunnelling microscopy: STM induced luminescence in semiconductors (F Brione)
- Operating modes in scanning probe microsocpy (F Reineke et al)
- Mapping of the transient response of compound semcionductors using luminescence (C Klingelhoefer et al)
- Prospects of an application of a scanning tunnelling microscope to electron beam induced current (EBIC investigation (P Koschinski et al)
- Contact mechanisms in the fabrication of gold nanostructures by scanning tunnelling microscopy (A M Baro et al)
- Scanning probe atomic microsocpy "taping mode" application to semiconductor image processing, large samples (K Kjoller)
- Scanning tunnelling induced luminescence studies of GaAs (100) surfaces after different surface treatments (J Horn et al). Inelastic light scattering: Raman: Inhomogeneities in semiconductors (P V Huong)
- Structural and electronic properties of pulsed laser beam mixed NiGaAs (Watte et al)
- Annealing and defect characterization of semi-insulating GaAs crystals (M Herms et al)
- Local Raman probing of semiconductor epilayers in the vicinity of surfaces and interfaces (P Puech et al). Elastic light scattering tomography: Late results in interface image reconstruction application to Ohmic contact inspection (J P Fillard)
- Usefulness of light scattering tomography for GaAs industry (S Kuma)
- Crystal perfection and detection of defects just under wafer surfaces of semiconducting and insulating materials (N Nango and T Ogawa)
- Measurement of diffusion length of minority carrier in Si crystal by photoluminescence tomography (Moriya and Chtsuka)
- Photoluminescence mapping: Pre-processing epitaxial layer evaluation - what do you really have to measure (C J Miner). Photoluminescence mapping of interface and near interface transitions in Np-based heterostructures (S K Krawczyk et al)
- Scanning photoluminescence study of degradation in GaAs/GaAlAs double-heterostructures - evidence of donor annihilation (D Vignaud et al)
- A novel method fo whole-wafer alloy composition mapping (T W Steiner et al)
- Defects in Inx Ga 1-x As/GaAs strained quantum wells (L Reckenberg et al)
- Complementary study of indentation-induced dislocations in GaAs and InP by photoetching, SEM, EBIC and SPL (J L Weyher et al)
- Porous silicon luminescence study by defect imaging methods (M Wesolowski et al). Defect characterization: Metastable defects in semiconductors, where are we now? (J M Langer)
- Review of reverse contrast imaging of GaAs (Brozel and Tuzemen)
- Influence of defects on diffusion length inhomogeneity in GaAs:Te wafers (A Castaldini et al)
- Investigation of extended defects in HgCdTe epilayers on CdTe, CdZnTe and CdTe/Sapphire (Franzosi and Bernardi). Optical Techniques: Photon scanning tunnelling microscopy and spectroscopy (J P Goudonnet et al)
- Macroscopic and microscopic characterization of residual strains in LEC-grown III-compound wafers (Yamada)
- Minority carrier diffusion length mapping of extended crystallographic defects in semiconductor silicon (Stemmer and Martinuzzi)
- Characterization of the relief of semiconductor surfaces using digital interference microscopy (P C Montgomery et al)
- PSTM images for semiconductor nanotechnologies (Fillard et al)
- Photoreflectance analysis of MQW's in Franz-keidysh oscillations regime (Geddo et al). Substrates: Double crystal topography of large size semiconducting crystals (C Ferrari)
- Characterization of LEC InP single crystals: correlations betwen SIMS
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