Silicon carbide and related materials : proceedings of the fifth conference, 1-3 November 1993, Washington, DC, USA

著者

• Spencer, M. G. (Michael G.)

書誌事項

Silicon carbide and related materials : proceedings of the fifth conference, 1-3 November 1993, Washington, DC, USA

edited by M.G. Spencer ... [et al.]

（Institute of Physics conference series, no. 137）

Institute of Physics Pub., c1994

注記

Includes bibliographical references and index

内容説明・目次

内容説明

USA companies working in this area include Westinghouse. This material is being investigated primarily in the USA, Japan and Russia alongside that into wide-gap compounds which feature similar characteristics. Applications include high temperature ultra-violet lasers, photodiodes, photodetectors, blue LEDs, high power microwave applications in radar and transmitter devices Special sale to delegates 200 @ 35 Previous volumes in series published by Springer Leading workers in field include Pavlidis (MIT) and Choyke (Pittsburgh, Dept Phys) Feng author is also presenting paper Research in this area is expanding

目次

Preface. Plenary Presentation: Bulk crystals, thin films and devices of the wide band gap semiconductors of silicon carbide and the III-V nitrides of aluminium, gallium and indium (R F Davis). Growth of SiC: Large diameter 6H-SiC crystal growth for microwave device applications (H M Hobgood et al). Sublimation growth and characterization of SiC single crystalline ingots on faces perpendicular to the (0001) basal plane (J Takahashi et al). Sublimation growth of 6H-SiC crystals on different faces of a 6H-SiC seed (J Yang et al). A process for the growth of monocrystalline ^D*b-SiC substrates (V Shields et al). Crystal growth of cubic SiC by the sublimation method (J Yang et al). SiC epitaxial growth on a-axis SiC substrates (A A Burk Jr et al). Epitaxial growth of 3C-SiC on *A-SiC substrates by chemical vapor deposition (K Nishino et al). Sublimation growth of silicon carbide in the growth system free of carbon materials (A O Konstantinov and P A Ivanov). A novel hot-wall CVD reactor for SiC epitaxy (O Kordina et al). Progress in SiC epitaxy-present and future (H Matsunami). Site-competition epitaxy for controlled doping of CVD silicon carbide (D J Larkin et al). Two-dimensional nucleation and step dynamics in crystal growth of SiC (T Kimoto and H Matsunami). Step-controlled epitaxy of 4H-SiC and its physical properties (A Itoh et al). Crystal growth of SiC on AlN/Sapphire by CVD method (S Nishino et al). Heteroepitaxial growth of SiC on AlN by chemical vapor deposition (V A Dmitriev et al). Large area formation of 3C-SiC on Si substrates by atomic level epitaxy (H Nagasawa and Y Yamaguchi). Low temperature ALE of SiC (J J Sumakeris et al). Reduced temperature heteroepitaxial growth of 3C-SiC on Si(100) from silacyclobutane (A J Steckl et al). Growth of low-temperature cubic SiC on tilted and non-tilted (100)Si with 60 V breakdown Schottky barriers (C W Liu and J C Sturm). AC plasma-assisted CVD of 3C-SiC films at low substrate temperature (H Shimizu and K Naito). Deposition os SiC from a laser-ablated 6H-SiC target at room temperature (M A Capano et al). Growth model for step-controlled epitaxy of SiC: surface kinetics of adatoms on vicinal 6HSiC{0001} faces (T Kimoto and H Matsunami). Epitaxial layers of n- and p-type 6H-SiC grown by the sublimation 'sandwich' method in an electron heated cell (M M Anikin et al). The method for formation of a clean silicon carbide surface in high vacuum (A N Andreev et al). Preparation and properties of polycrystalline SiC/single-crystal Si heterojuntion diodes (K Kamimura et al). Preparation of SiC films by plasma-assisted chemical vapor deposition using SiC1^O4 (K Kamimura et al). Impurity incorporation in 15R- and 6H-SiC polytypes grown by physical vapor transport (N I Buchan et al). Amorphous Materials: Hydrogen and carbon depth profile measurement in a-Si^Ol-xC^Ox:H films by elastic recoil detection (V Kh Kudoyarova et al). Deposition of hydrogenated amorphous silicon-carbon alloy films by magnetron glow discharge plasma (N A Rogachev et al). Effect of temperature annealing on the properties of a-Si^Oo.5C^O0.5:H films (I N Trapeznikova et al). Electrical and optical characterization of SiGe and SiGeC layers (Jianmin et al). Preparation of polycrystalline SiC thin films by a reactive sputtering process (Y Onuma et al). Electrical characterization of polycrystalline SiC thin films deposited on fused silica substrates by laser ablation (N Abu-Ageel et al). SiC characterization: A short atlas of liminescence and absorption lines and bands in SiC, GaN, AlGaN and AlN (W J Choyke and I Linkov). Observation of doping dependence of epitaxially grown 6H-SiC for various CVD growth directions (L L Clemen et al). Thermoluminescence and material characterization of 6H- and 4H-SiC single crystals (Th Stiasny and R Helbig et al). Hall effect amd CV measurements on epitaxial 6H and 4H-SiC (W J Schaffer et al). Investigation of defects in epitaxial 3C-SiC, 4H-SiC, and 6H0SiC films grown on SiC substrates (J A Powell et al). Investigation of structural defects in 6H-SiC Wafers (R C Glass et al). UV-reflectivity of SiC polytypes: comparison between theory and experiment (W Suttrop et al). Hall effect and infrared absorption measurements on nitrogen donors in 15R-SiC (Th Troffer et al). STM study of Si-rich reconstructions on 3C-SiC(001) surface (S Hara et al). Donor excitation spectra in 3C-SiC (W J Moore et al). Silicon carbide as a novel material for micro mechanical applications (L G Matus et al). Dynamic characterization of mechanical properties of 3C epitaxial SiC (K Fekade et al). Characterization of the microstructure and optical properties of porous silicon carbide (J S Shor et al). Point defects in silicon carbide (Yu A Vodakov and E N Mokhov). Electron cyclotron resonance in cubic SiC (R Kaplan et al). EPR and ODEPR investigations on the microscopic structure of the boron acceptor in 6H-SiC (J Reinke et al). EPR and ENDOR investigations of a phosphorus defect in 6H-silicon carbide (E N Kalabukhova et al). Optically detected EPR and MCDA temperature dependence of a vanadium impurity in 6H-silicon carbide (J Reinke et al). Ab initio calculations for bulk SiC and the clean 3C SiC(110) 1 x 1 surface: Ground-state properties, electronic and atomic structure (B Wenzien et al). Hydrogen in CVD films of 6H, 4H and 15R SiC (L L Clemen et al). Electron paramagnetic resonance of an interstitial manganese impurity in 6H-SiC (M Feege et al). Persistent photoconductivity and carrier mobility in nitrogen-doped 6H-SiC (P Staikov et al). Gas-phase reaction in epitaxial growth of SiC films by chemical vapor deposition from SiH^O4 and C^O3H^O8 (Lu-S Hong et al). Silicon carbide precipitation in silicon. An approach to nanoparticle fabrication? (A R Powell et al). Effect of metal work function on the formation of W and Mo Contacts to 3C-SiC (C Jacob et al). Calibration procedure to determine the nitrogen impurity concentration in 6H SiC at low concentration levels (L L Clemen et al). ESR studies of defects in electron irradiated p-type 3C-SiC epilayers (H Itoh et al). Characterization of ^D *B-SiC CVD films on ^D*A - SiC substrates (W S Yoo et al). Redistribution of aluminum during thermal oxidation of 6H silicon carbide (C M Zetterling and M ^D"Ostling). ESR of 3C-SiC films prepared by LPCVD method (T Izumi et al). A relationship between defect electroluminescence and deep centers in 6H-SiC (A N Andreev et al). Plasma passivation of crystalline silicon carbide (A O Konstantinov et al). Optical properties and structure of RF magnetron sputtering a-Si^Ol-xC^Ox:H films (V K Kudoyarova et al). Vibrational properties associated with isolated defects in cubic silicon carbide (D N Talwar and Z C Feng). TEM study of low-temperature CVD silicon carbide films grown on on-axis 6H-SiC substrates (K Fekade et al). Recent developments in the characterization of the aluminum center in 3C, 4H and 15R SiC (L L Clemen et al). Identification of {2110} and {1010} faces of 4H, 6H and 15R polytypes of silicon carbide using the Laue method (M Yoganathan et al). Photoluminescence study of interface dislocations in the silicon substrate after epitaxial growth of cubic silicon carbide (A Henry et al). Properties of annealed 3C-SiC CVD films (S V Rendakova et al). Carrier concentration dependence of the thermal conductivity of silicon carbide (D Morelli et al). Reactive ion etching of 6H-SiC in CHF^O3 plasma (P H Yih and A J Steckl). Oxidation of 3C and 6H-SiC in N^O2O (R C De Meo et al). Electrical properties of thermally oxidized silicon carbide semiconductor (N N Singh and A Rys). Electrical transport properties of monocrystalline cubic SiC/Si heterojunctions (A S Zubrilov). Structure of a 6H silicon carbide vicinal surface (S Tyc). The defect microstructure of silicon carbide single crystals (D Black et al). X-ray double crystal and x-ray topographic characterization of structure, strain and defects in SiC thin films on Si and AlN/Al^O2O^O3 substrates (J Chaudhur et al). The effect of high-temperature anneal on the structural perfection of 3C-SiC epitaxial layers grown by CVD on Si(111) (I P Nikitina et al). Monatomic step kinetics in Lely-ty pe bulk crystal growth of 6H-SiC (Z Zhang et al). Modelling of step propagation on 6H-SiC (0001) surface (P Heuell et al). Growth of Ge^O1-yC^Oy alloys by molecular beam epitaxy (J Kolodzey et al). Spatially resolved electron beam induced transient spectroscopy for deep centers in wide bandgap semiconductors (K H Schoenbach et al). Scanning tunnelling microscopy on 6H-SiC (0001) surface (P Heuell et al). Growth of III/V Nitrides: Prospects for high-pressure crystal growth of III-V nitrides (S Porowski et al). Atomic layer chemical vapor deposition of single layers, quantum wells and short period superlattices (M Asif Khan et al). Epitaxial growth of cubic GaN by gas source MBE and its properties (S Yoshida et al). The growth and characterization of silicon-doped GaN (D K Wickenden and W A Bryden). Solid solutions in the SiC-AlN system (A Zangvil and R Ruh). Growth of pseudomorphic heterostructures and solid solutions in the AlN-SiC system by plasma-assisted, gas-source molecular beam epitaxy (R S Kern et al). Control of the solid AlN/SiC composition by the growth of multi-layered structures (Z J Yu et al). Growth of solid solutions of aluminum nitride and silicon carbide in low-pressure vertical reactor MOCVD (K Wongchotigul et al). Metalorganic chemical vapor deposition of (AlN)^Ox(SiC)^O1-x alloy films (J H Edgar et al). Epitaxial growth of aluminun nitride on sapphire using modified chloride-hydride method (A O Lebedev et al). Growth of epitaxial GaN thin films on AlN buffered Si(111) by reactive sputtering (W J Meng et al). GalN and AlN OMVPE growth using phenylhydrazine (C H Hong et al). Deposition of highly resistive, undoped and p-type, magnesium-doped gallium nitride films by modified gas source molecular beam epitaxy (C Wang et al). Ion beam assisted MBE and high resolution transmission electron microscopy of BN thin films (D J Kester et al). Al^OxGa^O1-xN grown on (00.1) and (01.2) sapphire (C J Sun et al). Effect of growth temperature on GaN films grown on gaN buffer layers (L B Rowland et al). Insulating properties of mixed-phase BN thin films in an MIS structure (M Z Karim and D C Cameron). Thermodynamic analysis of chemical vapour deposition of SiC-AlN solid solutions (A O Lebedev et al). Characterization of nitrides: Paramagnetic resonance and optical studies of GaN (W E Carlos et al). Characterization of boron nitride films grown by ion-assisted pulsed laser deposition (G L Doll et al). Nitrogen-vacancy model for the deep state observed in GaN films (E R Glaser et al). Theoretical study of the electronic, optical, interface, and alloy properties of SiC and the group-III-nitrides (W R L Lambrecht et al). Cathodoluminescence and FTIR reflectance of thin AlN and GaN films (M F MacMillan et al). Devices: Potential of wide bandgap semiconductor devices for high-temperature applications (M Shur et al). High-voltage Au/6H-SiC Schottky barrier diodes (T Urushidani et al). 2000 V 6H-SiC pn junction diodes (P G Neudeck et al). How far are we from silicon carbide IMPATT diodes for 100-200 GHz? (K V Vassilevski). Planar depletion-mode 6H-SiC MOSFETs (V Krishnamurthy et al). Issues associated with large-area SiC diodes with avalanche breakdown (C Fazi et al). SiC microwave power MESFETs (S Sriram et al). Silicon carbide microwave FETs (J W Palmour et al). Vertical power devices in silicon carbide (J W Palmour et al). Normally off 6H-SiC JFET and its high-temperature operation (R Rupp et al). Electrical characterization of n-channel, 6H-SiC JFETs as a funtion of temperatue (F B McLean et al). High electron mobility transistor (HEMT) based on GaN-AlGaN heterostructures (M Asif Khan et al). Blue/UV emitters from SiC and its alloys (J Edmond et al). Photoconductive and photovoltaic UV sensors based on GaN monolayers and p-n juntions (M Asif Khan et al). Photoelectrochemical etching of n-type 6H-SiC (J S Shor et al). Silicon carbide application in integrated optics (A Yu Maksimov et al). High-effective ion-implanted green 6H-SiC LEDs (A V Suvorov et al). Nanocrystalline particles of ^D*B-SiC (J R Heath et al). Optical second-harmonic investigations of GaN thin films on sapphire (J Miragliotta et al). XPS study of SiN^Ox thin film formation on Si(100) by reaction with 100-1000 ev N^O2^T+ ion beams (I Kusunoki et al). Graphitization of silicon carbide implanted by aluminium at high temperature of target (V N Makarov et al). The current, electroluminescence and recombination parameters of SiC pn structures produced by container-free liquid-phase epitaxy (A M Strel'chuk et al). Atomic force microscopy of AlN thin films (M D Roth et al). Band offset measurements of 3C-SiC/Si np heterojunction diodes grown by reactive magnetron sputtering (M Karlsteen et al). Electrolytic etching of silicon carbide (R A Stein and R Rupp). Electrical measurements on 6H-silicon carbide pn junctions (C Raynaud et al). Microstructure of transparent silicon carbide from CVD (Y Kim et al). Lateral and vertical p-type 6H-SiC photoconductive switch response (S E Saddow et al). High breakdown voltage SiC/Si heterojuntion diodes by rapid thermal chemical vapor deposition with methylsilane (P H Yih et al). Deposition and characterization of Schottky and Ohmic contacts on n-type alpha (6H)-SiC (0001) (L M Porter et al). 3C-monocrystalline SiC reactive ion etching using SF^O6/O^O2 (D Alok et al). The effect of neutron irradiation on current in SiC pn structures (V V Evstropov et al). Junction field-effect transistor based on 4H-silicon carbide (P A Ivanov et al). Low pinch-off voltage JFETs in SiC (M M Anikin et al). Characterization of 6H-silicon carbide MOS-structures (P A Ivanov et al). Deep centers and blue-green electroluminescence in 4H-SiC ( M M Anikin et al). Parameter evaluation for silicon carbide thyristors (A N Andreev et al). Quantum efficiency of the photoelectrical effect and impact ionization in a-Si:H films in the UV spectral range (M E Kumekov et al). Electrochemical and photo-assisted electrochemical etching of 6H-SiC (C I Harris et al). Examination of semiconductos for bipolar power devices (A Bhalla and T P Chow). 6H-siC junction field effect transistor for high-temperature applications (K Dohnke et al). High-temperature gas sensors based on metal oxide silicon carbide (MOSiC) devices (A Spetc et al). Measurement of fast and slow interface traps in n-type dry thermally oxidized 6H-SiC MOS diodes by high frequency and quasi-static C-V techniques (S Kang et al). Silicon carbide CCD UV imagers for the 100-300 nm regime (J A Cooper Jr and M R Melloch). Current transport across a Schottky barrier in a SiC MESFET for high-temperature operation (M W Shin et al). A comparative study of different insulators on 6H-silicon carbide (G E Morgan et al). Process and device simulation for silicon carbide technology (M Cameron and A Rys). Ohmic and rectifying contacts to 3C-SiC using All-Ni technology (A J Steckl et al). The effect of defects in the substrate on the blue electroluminescence efficiency of epitaxial 6H-SiC p-n structures (Ya V Morozenko). Temperature dependence of avalanche breakdown voltage of pn-junctions in 6H-SiC at high current density (K V Vassilevski et al). Effect of reaction products in monocrystalline ^D *B -SiC/metal contact on contact resistivity (H J Co et al). 6H-SiC MESFET devices using n+ capping layers (P G Young et al). High-frequency MESFETs in 6H-SiC (S Tyc and C Arnodo). Structure and electrical properties of implantation-doped pn junctions in SiC (E V Kalinina and G F Kholujanov). Metal contacts to n- and p-type 6H-SiC: electrical characteristics and high-temperature stability (J B Petit et al). Electrical characterization of (6H) SiC MOS capacitors at high temperature (T Ouisse et al). Monte Carlo simulations of temperature-dependent electron mobility in GaN (R P Joshi and P K Raha). Device modelling, processing and applications: Strain and charge distribution in GaN/AlN/GaN semiconductor-insulator-semiconductor structure (A Bykhovski et al). Chloride-based dry etching process in 6H-SiC (E Niemann et al). Simulation of RF power and noise in SiC MESFET circuits (G L Bilbro et al). SiC power UMOSFET: design, analysis and technological feasibility (M Bhatnagar et al). An isoplanar isolation technology for SiC devices using local oxidation (R Tyagi et al). Progress and prospects for non volatile memory development in silicon carbide (J A Cooper Jr et al). Beta SiC Schottky diode FET inverters grown on silicon (G L Haris et al). A TiW high-temperatue Ohmic contact to n-type 6H-SiC (J Crofton et al). Characterization of monolithic n-type 6H-SiC piezoresistors (L Bemis et al). Subject Index. Author Index.

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詳細情報

• NII書誌ID(NCID): BA23067988
• ISBN:
  • 0750303026
• LCCN: 94012420
• 出版国コード: uk
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: Bristol
• ページ数/冊数: xix, 737 p.
• 大きさ: 24 cm
• 分類:
  • LCC : TK7871.15.S56
  • DC20 : 621.3815/2
• 件名:
  • LCSH : Silicon carbide -- Congresses
  • LCSH : Silicon-carbide thin films -- Congresses
  • LCSH : Wide gap semiconductors -- Congresses
  • LCSH : Crystal growth -- Congresses
• 親書誌ID:
  • BA00171324