Porous silicon

著者

• Feng, Zhe Chuan
• Tsu, Raphael

書誌事項

Porous silicon

editors, Zhe Chuan Feng, Raphael Tsu

World Scientific, c1994

注記

Includes bibliographical references

内容説明・目次

内容説明

Due to the recent discovery of the room-temperature visible light emission from porous silicon (P-Si), a great interest in P-Si and related materials has arisen in the last decade of the 20th century. Crystalline (c-) Si, at the heart of integrated circuits, has an indirect band gap of 1.1 eV, which limits its application in optoelectronics. The visible light emitting P-Si may open a new field combining Si integrated technology and optoelectronics. This book is a comprehensive review of the recent research and development of porous silicon. Strong visible photoluminescence (PL) and electroluminescence (EL) from P-Si and other forms of silicon nanocrystallites (nc-Si) are reviewed. Several proposed mechanisms for the PL from porous silicon such as quantum confinement, amorphicity and molecular PL are studied. The following issues are covered: mechanisms for the visible light emission, physical structures, studies of the PL and EL, correlation of structure and optical studies, surface physics and chemistry, relationships among various forms (P-Si, a-Si, µc-Si), device applications, future developments.

目次

• Porous Silicon Quantum Sponge Structures: Formation Mechanism, Preparation Methods and Some Properties (U Gosele & V Lehmann)
• Light Emission from Silicon (S Iyer & Y H Xie)
• Spin Resonance Investigations of Porous Silicon, Siloxene and Related Materials (M Stutzmann & M S Brandt)
• Porous Silicon: Microstructure, Optical Properties and Application to Light Emitting Diodes (T Matsumoto et al)
• Photoluminescence Excitation Spectroscopy of Porous Silicon (N M Haegel & L Wang)
• Porous Silicon: Surface Chemistry (C Tsai et al.)
• First Principles Calculations of Light Emission from Si-Based Materials (C G Van de Walle & J E Northrup)
• The Photo Excitation and Luminescence in Porous Silicon (G G Qin)
• Properties of Light-Emitting Porous Si and Sil-xGe Alloys Produced by Stain Etches (R W Fathauer et al). (Part contents).

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詳細情報

• NII書誌ID(NCID): BA23719193
• ISBN:
  • 9810216343
• LCCN: 95134818
• 出版国コード: si
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: Singapore
• ページ数/冊数: xx, 465 p.
• 大きさ: 23 cm
• 分類:
  • LCC : TK7871.85
  • DC20 : 537.6/226
• 件名:
  • LCSH : Semiconductors -- Materials -- Optical properties
  • LCSH : Silicon -- Optical properties
  • LCSH : Porous silicon -- Optical properties