Characterization in compound semiconductor processing
著者
書誌事項
Characterization in compound semiconductor processing
（Materials characterization series）
Butterworth-Heinemann , Manning, c1995
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注記
Includes bibliographical references and index
内容説明・目次
内容説明
This volume focusses on the characterization of semiconductor materials and other materials used in the manufacture of microelectronic or optoelectronic devices. It addresses the use of materials characterization tools in solving problems relating to surfaces, interfaces, and thin films of these materials. The book has two major sections, one on Si based systems and the other on compound semiconductor systems. Although there are many materials common to both technologies, the applications, processing, and problems seen, are different enough to warrant this separation. In the silicon section there is a chapter on semiconducting layers, such as epi SI, SOI layers, Si Ge films discussing the techniques used in problem-solving in these films. In the area of conducting films there are chapters of doped poly Si, silicide and polycides, Al- and/or Cu-cased films, W-based films and one on barrier materials. Each of these systems is sufficiently different to benefit from a different author and a separate discussion of the many problems encountered. This section is then be completed by a chapter or dielectric Mm. Even though there are a number of different applications for dielectrics, i.e. passivation films, intermetal dielectrics, gate oxides, field oxides, and different materials used, e.
g. thermal SiO2, PECVD Si3N4, PECVD SiO2, silicon oxynitride, reoxidized Nitrided oxide (RONO), etc., the characterisations required on these films to solve common problems are similar enough to be addressed in one chapter. The compound semiconductor section has similar organization. In this case, the semiconductor film area is divided into three chapters: One on M - V films for electronics applications; one on IH - V films for optical applications; and one on other compound semiconductor films, including primarily 11 - VI films. The material systems and applications of these films sufficiently different to require separate treatment. A chapter on contacts, including both ohmic contacts and Schottky barriers, is useful in the treatment of compound semiconductors. There is a chapter on the conductors used for interconnects.
目次
- Introduction
- Part I: Si-based systems
- Semiconducting Si Films
- Polysilicon Conductors
- Silicides and Polycides
- A1 and/or Cu based Conductors
- W-based Conductors
- Barrier Films
- Dielectric Films
- Part II: Compound semiconductor systems
- III-V Semiconducting Films for Electronic Applications
- III-V Semiconducting Films for Optical Applications
- Other Compound Semiconductor Films
- Contacts
- Conductors/ Interconnects
- Dielectic Films.
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