Growth mechanisms and dynamics

Bibliographic Information

Growth mechanisms and dynamics

edited by D.T.J. Hurle

(Handbook of crystal growth, v. 3 . Thin films and epitaxy ; pt. B)

North-Holland, 1994

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Note

Includes bibliographical references and index

Description and Table of Contents

Description

Part A reviews the basic techniques of halide, organometallic and molecular beam epitaxy, liquid and solid phase epitaxial techniques, rapid solidification by pulsed laser annealing and laser ablation of oxide thin films. The final chapter is devoted to the growth of diamond films.Part B covers the underlying mechanisms and dynamics of epitaxial growth processes including nucleation, structural, kinetic and transport effects. In addition, refinements of some of the growth techniques described in Part A such as atomic layer, migration-enhanced and photo-assisted epitaxial processes are also described.

Table of Contents

Part A. Basic Techniques 1. Halogen transport epitaxy (H. Watanabe). 2. Levitation epitaxy (H.M. Cox). 3. The principles and practice of organometallic vapor phase epitaxy (D.W. Kisker, T.F. Kuech). 4. Principles of molecular beam epitaxy (C.T. Foxon). 5. Molecular beam epitaxy with gaseous source (H. Hirayama, H. Asahi). 6. Liquid phase epitaxy (M.B. Small, E.A. Giess, R. Ghez). 7. Solid phase epitaxy (G.L. Olson, J.A. Roth). 8. Rapid solidification of silicon and some silicides by pulsed laser annealing (P. Baeri, S.U. Campisano). 9. Pulsed laser ablation-deposition of multicomponent oxide thin films: basic laser ablation and deposition processes and influence on film characteristics (O. Auciello). 10. Growth of diamond films from the vapour phase (B.V. Spitsyn).Part B. Growth Mechanisms and Dynamics 11. Kinetic processes in vapour growth (A.A. Chernov). 12. Organometallic vapor phase epitaxy reaction kinetics (G.B. Stringfellow). 13. Transport phenomena in vapor phase epitaxy reactors (K.F. Jensen). 14. Atomic layer epitaxy (T. Suntola). 15. Nucleation and surface diffusion in molecular beam epitaxy (T. Nishinaga). 16. Migration-enhanced epitaxy (Y. Horikoshi). 17. Metalorganic vapour phase epitaxial growth of ultra-thin quantum wells and heterostructures (L. Samuelson, W. Seifert). 18. Photoassisted epitaxy (S.J.C. Irvine). 19. In situ optical studies of epitaxial growth (C. Pickering). 20. Atomic mechanisms in semiconductor liquid phase epitaxy (E. Bauser). 21. Artificial epitaxy (graphoepitaxy) (E.I. Givargizov). 22. Structural effects in coherent epitaxial semiconductor films (A. Zunger).

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Details

  • NCID
    BA24065988
  • ISBN
    • 0444815562
  • Country Code
    ne
  • Title Language Code
    eng
  • Text Language Code
    eng
  • Place of Publication
    Amsterdam ; Tokyo
  • Pages/Volumes
    vi, [459]-1065 p.
  • Size
    25 cm
  • Subject Headings
  • Parent Bibliography ID
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