Complete guide to semiconductor devices
著者
書誌事項
Complete guide to semiconductor devices
（McGraw-Hill series in electrical and computer engineering, Electronics and VLSI circuits）
McGraw-Hill, c1995
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注記
Includes index
内容説明・目次
内容説明
This text provides an overview of existing semiconductor devices. Each device is covered in one short, self-contained chapter for quick review, minimizing the need to cross-refer, and allowing students to compare relative merits of classes of electronic components, such as economic trade-offs.
目次
- Part 1 Diodes I - rectifiers: p-n junction diode
- p-i-n diode
- Schottky-barrier diode
- planar-doped-barrier diode
- isotype-heterojunction barrier. Part 2 Diodes II - negative resistance: tunnel diode
- transferred-electron device (TED)
- impact-ionization avalanche transit-time (IMPATT)
- barrier-injection transit-time (BARITT) diode
- resonant-tunnelling diode
- real-space-transfer (RST) diode. Part 3 Resistive devices: resistor
- Ohmie contact. Part 4 Capacitive devices: metal-oxide-semiconductor (MOS) capacitor
- charge-coupled device (CCD). Part 5 Switches: metal-insulator-semiconductor switch (MISS)
- planar-doped barrier switch
- amorphous threshold switch. Part 6 Transistor I - field-effect: metal-oxide-semiconductor field-effect transistor (MOSFET). Part 7 Transistors II - potential-effect. Part 8 Transistors III - hot-electron. Part 9 Light sources. Part 10 Photodetectors. Appendices: selected non-semiconductor devices
- physical phenomena. (Part contents).
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