Electrical and thermal characterization of MESFETs, HEMTs, and HBTs

著者

    • Anholt, Robert

書誌事項

Electrical and thermal characterization of MESFETs, HEMTs, and HBTs

Robert Anholt

(The Artech House microwave library)

Artech House, c1995

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注記

Includes bibliographical references and index

内容説明・目次

内容説明

This work provides a comprehensive discussion of the bias dependence of equivalent circuit parameters for the three devices and an extensive discussion of temperature dependence. It: covers recess-etched MESFETs and self-aligned MESFETs with and without lightly-doped-drains and JFETs; analyzes GaAs-based pHEMTS and InP lattice-matched HEMT equivalent circuits; and describes a large-signal, temperature-dependent model extractor for A1GaAs-GaAs HBTs. The book is intended for circuit designers, process and device developers and test engineers.

目次

Physical Modeling of III-V Semiconductor Devices. How to Measure Temperature-dependent Equivalent Circuits. Self-heating in Transistors. GaAs MESFET Equivalent Circuits (Room Temperature). Temperature-dependent MESFET Equivalent Circuits. HEMT Equivalent Circuits (Room Temperature). Temperature-dependent HEMT Equivalent Circuits. Gate Currents in MESFETs and HEMTs. Heterojunction Bipolar Transistors. Circuit Modeling.

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