Microscopy of semiconducting materials 1995 : proceedings of the Institute of Physics Conference held at Oxford University, 20-23 March 1995
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Bibliographic Information
Microscopy of semiconducting materials 1995 : proceedings of the Institute of Physics Conference held at Oxford University, 20-23 March 1995
（Institute of Physics conference series, no. 146）
Institute of Physics Pub., 1996
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Includes bibliographical references and index
Description and Table of Contents
Description
This volume continues the tradition of previous meetings in the series and provides researchers with an overview of recent developments in the field. Contains invited review papers together with in-depth coverage of the latest research results. Encompassing techniques from transmission and scanning electron microscopy, X-ray topography and diffraction, scanning probe microscopy and atom probe microanalysis, as applied to the whole range of semiconducting materials.
Table of Contents
Preface. High resolution microscopy (14 papers). Dislocations and grain boundaries (10 papers). Epitaxial layers (46 papers). Quantum wells and superlattices (12 papers). Bulk gallium arsenide and other compounds (11 papers). Processed silicon and diamond (19 papers). Silicides and metal-semiconductor contacts (8 papers). Device structures (17 papers). STM and AFM applications (7 papers). Advanced SEM and SOM applications (22 papers). Author and subject indexes.
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