Molecular beam epitaxy : fundamentals and current status
Author(s)
Bibliographic Information
Molecular beam epitaxy : fundamentals and current status
（Springer series in materials science, v. 7）
Springer, 1996
2nd, rev. and updated ed
Available at / 27 libraries
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The Institute for Solid State Physics Library. The University of Tokyo.図書室
428.41:M14e7210127549
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Institute of Materials and Systems for Sustainability, Nagoya University未来材料研
427.57||H41177311
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Note
Includes bibliographical references and index
Description and Table of Contents
Description
This study describes a technique in wide-spread use for the production of high-quality semiconductor devices. It discusses the most important aspects of the MBE apparatus, the physics and chemistry of the crystallization of various materials and device structures, and the characterization methods that relate the structural parameters of the grown (or growing) film or structure to the technologically relevant procedure. In this edition two new fields have been added: crystallization of as-grown low-dimensional heterostructures, mainly quantum wires and quantum dots and in-growth control of the MBE crystallization process of strained-layer structures.
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