Molecular beam epitaxy : fundamentals and current status
著者
書誌事項
Molecular beam epitaxy : fundamentals and current status
（Springer series in materials science, v. 7）
Springer, 1996
2nd, rev. and updated ed
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注記
Includes bibliographical references and index
内容説明・目次
内容説明
This study describes a technique in wide-spread use for the production of high-quality semiconductor devices. It discusses the most important aspects of the MBE apparatus, the physics and chemistry of the crystallization of various materials and device structures, and the characterization methods that relate the structural parameters of the grown (or growing) film or structure to the technologically relevant procedure. In this edition two new fields have been added: crystallization of as-grown low-dimensional heterostructures, mainly quantum wires and quantum dots and in-growth control of the MBE crystallization process of strained-layer structures.
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