Properties of gallium arsenide
Author(s)
Bibliographic Information
Properties of gallium arsenide
（EMIS datareviews series, no. 16）
INSPEC, Institution of Electrical Engineers, c1996
3rd ed. / edited by M.R. Brozel and G.E. Stillman
Available at / 8 libraries
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Kochi University of Technology.Library
549.8||P94000249193,
549.8||P94000200204, 549.8||P9400020020, 549.8||P9400024919 -
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Includes bibliographies and index
Description and Table of Contents
Description
It was in 1986 that INSPEC (The Information Division of the Institution of Electrical Engineers) published the book "Properties of Gallium Arsenide". Since then, major developments have taken place. This third edition is comprised of 150 specially commissioned articles contributed by experts from the USA, Europe and Japan. Gallium arsenide is revolutionizing the semiconductor industry. It is a major competitor to silicon in the push for faster, higher frequency and greater bandwidth circuits. GaAs has a much higher electron mobility, has greater thermal stability and provides higher resistivity IC (integrated circuit) substrates than silicon. Moreover, it is a key material in some areas where silicon is of only minor significance; namely, the burgeoning field of heterostructures which permit combinations of digital, microwave, millimetre wave and optical circuits. Gallium arsenide is also widely used in LEDs (light emitting diodes) and solar cells.
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