Positron annihilation in semiconductors : defect studies

書誌事項

Positron annihilation in semiconductors : defect studies

R. Krause-Rehberg, H.S. Leipner

(Springer series in solid-state sciences, 127)

Springer, c1999

  • alk. paper

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注記

Includes bibliographical references (p. [353]-374) and index

内容説明・目次

内容説明

This comprehensive book reports on recent investigations of lattice imperfections in semiconductors by means of positron annihilation. It reviews positron techniques, and describes the application of these techniques to various kinds of defects, such as vacancies, impurity vacancy complexes and dislocations.

目次

1 Introduction.- 2 Experimental Techniques.- 3 Basics of Positron Annihilation in Semiconductors.- 4 Defect Characterization in Elemental Semiconductors.- 5 Defect Characterization in III-V Compounds.- 6 Defect Characterization in II-VI Compounds.- 7 Defect Characterization in Other Compounds.- 8 Applications of Positron Annihilation in Defect Engineering.- 9 Comparison of Positron Annihilation with Other Defect-Sensitive Techniques.- A1 Semiconductor Data.- A2 Trapping Model Equations.- References.

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