Positron annihilation in semiconductors : defect studies
Author(s)
Bibliographic Information
Positron annihilation in semiconductors : defect studies
（Springer series in solid-state sciences, 127）
Springer, c1999
- alk. paper
Available at / 33 libraries
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National Institutes of Natural Sciences Okazaki Library and Information Center図
alk. paper427/PO9133368218
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The Institute for Solid State Physics Library. The University of Tokyo.図書室
alk. paper428.41:P207210153214
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Note
Includes bibliographical references (p. [353]-374) and index
Description and Table of Contents
Description
This comprehensive book reports on recent investigations of lattice imperfections in semiconductors by means of positron annihilation. It reviews positron techniques, and describes the application of these techniques to various kinds of defects, such as vacancies, impurity vacancy complexes and dislocations.
Table of Contents
1 Introduction.- 2 Experimental Techniques.- 3 Basics of Positron Annihilation in Semiconductors.- 4 Defect Characterization in Elemental Semiconductors.- 5 Defect Characterization in III-V Compounds.- 6 Defect Characterization in II-VI Compounds.- 7 Defect Characterization in Other Compounds.- 8 Applications of Positron Annihilation in Defect Engineering.- 9 Comparison of Positron Annihilation with Other Defect-Sensitive Techniques.- A1 Semiconductor Data.- A2 Trapping Model Equations.- References.
by "Nielsen BookData"
