Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment
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Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment
（ECS transactions, vol. 3,
Electrochemical Society, c2006
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Includes bibliographical references and indexes
"The international symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes, and Equipment, 2 will be held from October 30-November 2, 2006 in the Moon Palace in the scenic city of Cancun, Mexico, as a part of the 210th Meeting of the Electrochemical Society. ..."--p. iii