Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment
著者
書誌事項
Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment
（ECS transactions, vol. 3,
Electrochemical Society, c2006
大学図書館所蔵 件 / 全2件
-
該当する所蔵館はありません
- すべての絞り込み条件を解除する
注記
Includes bibliographical references and indexes
"The international symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes, and Equipment, 2 will be held from October 30-November 2, 2006 in the Moon Palace in the scenic city of Cancun, Mexico, as a part of the 210th Meeting of the Electrochemical Society. ..."--p. iii
