Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment
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Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment
（ECS transactions, vol. 6,
Electrochemical Society, c2007
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注記
Includes bibliographical references and indexes
"The international symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Prosesses and Equipment, 3 will be held in May 6-10, 2007 in Chicago, the financial, business, and cultural capital of the Midwest as a part of the 211th Meeting of the Electrochemical Society" -- iii p.