Terrestrial neutron-induced soft errors in advanced memory devices
著者
書誌事項
Terrestrial neutron-induced soft errors in advanced memory devices
World Scientific, c2008
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注記
Includes bibliographical references and index
内容説明・目次
内容説明
Terrestrial neutron-induced soft errors in semiconductor memory devices are currently a major concern in reliability issues. Understanding the mechanism and quantifying soft-error rates are primarily crucial for the design and quality assurance of semiconductor memory devices.This book covers the relevant up-to-date topics in terrestrial neutron-induced soft errors, and aims to provide succinct knowledge on neutron-induced soft errors to the readers by presenting several valuable and unique features.
目次
- Terrestrial Neutron Spectrometry and Dosimetry
- Irradiation Test in the Terrestrial Field
- Neutron Irradiation Test Facilities
- Review of Experimental Data and Discussions
- Monte Carlo Simulation Methods
- Simulation Results and Their Implications
- International Standardization of Neutron Test Method
- Summary and Challenges.
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