Silicon carbide and related materials 2007 : selected, peer reviewd papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel convention haii, Lake Biwa resort, Otsu, Japan, October 14-19, 2007

著者

• International Conference on Silicon Carbide and Related Materials
• 鈴木, 彰 スズキ, アキラ

書誌事項

Silicon carbide and related materials 2007 : selected, peer reviewd papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel convention haii, Lake Biwa resort, Otsu, Japan, October 14-19, 2007

edited by, Akira Suzuki ... [et al.]

（Materials science forum, v. 600-603）

Trans Tech Publications, c2009

• : set
• pt. 1
• pt. 2

タイトル別名

ICSCRM 2007 : Lake Biwa resort, Otsu, Japan

注記

Includes bibliographical references and index

内容説明・目次

内容説明

Wide-bandgap semiconductors, such as silicon carbide and group-III nitrides have attracted increasing attention as promising target materials for high-power, high-frequency and high-temperature electronics use, as well as exploitation as short-wavelength light-emitters. Volume is indexed by Thomson Reuters CPCI-S (WoS).

目次

Committees Sponsors Preface Overview Chapter 1: SiC Bulk Growth 1.1 Bulk Growth of 4H- and 6H-SiC Growth of Crack-Free 100mm-Diameter 4H-SiC Crystals with Low Micropipe Densities 100 mm 4HN-SiC Wafers with Zero Micropipe Density Investigations on Polytype Stability and Dislocation Formation in 4H-SiC Grown by PVT Growth of 6H-SiC Single Crystals under Quasi-Equilibrium Conditions Aluminum P-Type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum Growth on Rhombohedral (01-1n) Plane: An Alternative for Preparation of High Quality Bulk SiC Crystals Bulk SiC Crystal Growth at Constant Growth Rate Utilizing a New Design of Resistive Furnace Application of 6H to 4H Polytype Conversion to Effective Reduction of Micropipes in 4H SiC Crystals Status of Large Diameter SiC Single Crystals at II-VI Occurrence of Polytype Transformation during Nitrogen Doping of SiC Bulk Wafer The Observation and Explanation of Electricity Switch Phenomena in PVT Grown SiC Bulk Simulation Study for HTCVD of SiC Using First-Principles Calculation and Thermo-Fluid Analysis Computational Analysis of SiC HTCVD from Silicon Tetrachloride and Propane 1.2 Bulk Growth of 2H- and 3C-SiC Growth of 2H-SiC Single Crystals in a C-Li-Si Ternary Melt System Solution Growth of SiC Crystals in Si-Ti and Si-Ge-Ti Solvents Stability Growth Condition for 3C-SiC Crystals by Solution Technique Structural Characterization of CF-PVT Grown Bulk 3C-SiC Comparative Study of Differently Grown 3C-SiC Single Crystals with Birefringence Microscopy Chapter 2: SiC Epitaxial Growth 2.1 Milestones SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices Silicon Carbide Growth:C/Si Ratio Evaluation and Modeling Challenges for Improving the Crystal Quality of 3C-SiC Verified with MOSFET Performance 2.2 Homoepitaxial Growth Advances in Multi- and Single-Wafer SiC Epitaxy for the Production and Development of Power Diodes Extremely Uniform, High Quality SiC Epitaxy on 100-mm Substrates High Quality Epitaxial Growth on 4 Degrees Off-Axis 4H SiC with Addition of HCl Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD Development of a High Rate 4H-SiC Epitaxial Growth Technique Achieving Large-Area Uniformity Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor Development of a Practical High-Rate CVD System SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate Thin SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor with Very Abrupt Junctions Multi-Level Simulation Study of Crystal Growth and Defect Formation Processes in SiC Theoretical Monte Carlo Study of the Formation and Evolution of Defects in the Homoepitaxial Growth of SiC Investigation of Triangular Defects in 4H-SiC 4 Degrees Off Cut (0001) Si Face Epilayers Grown by CVD Influence of Substrate Preparation and Epitaxial Growth Parameters on the Dislocation Densities in 4H-SiC Epitaxial Layers In Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD Homoepitaxial Growth of 4H-SiC by Hot-Wall CVD Using BTMSM Effect of Substrates Thermal Etching on CVD Growth of Epitaxial Silicon Carbide Layers Nitrogen Doping in Low-Temperature Halo-Carbon Homoepitaxial Growth of SiC Local-Loading Effect in Low-Temperature Selective Epitaxial Growth of 4H-SiC by Halo-Carbon Method Micropipe Dissociation through Thick n+ Buffer Layer Growth Growth Mechanism and 2D Aluminum Dopant Distribution of Embedded Trench 4H-SiC Region In Situ Nitrogen and Aluminum Doping in Migration Enhanced Embedded Epitaxial Growth of 4H-SiC Solution Growth of Off-Axis 4H-SiC for Power Device Application Epitaxial TaC Films for the Selective Area Growth of SiC 2.3 Heteropolytypic and Heteroepitaxial Growth Solution Growth of 3C-SiC on 6H-SiC Using Si Solvent under N2-He Atmosphere Solution Growth of 3C-SiC Single Crystals by Cold Crucible Technique Growth Mechanism of 3C-SiC Heteroepitaxial Layers on -SiC by VLS Growth Kinetics of 3C-SiC on -SiC by VLS 3C-SiC Islands Formation on 6H-SiC(0001) Substrate from a Liquid Phase Strain in 3C-SiC Heteroepitaxial Layers Grown on (100) and (111) Oriented Silicon Substrates Growth of 3C-SiC on Si: Influence of Process Pressure Void Formation in Differently Oriented Si in the Early Stage of SiC Growth 3C-SiC on Si Substrates Using Pendeo-Epitaxial Growth Influence of Growth Parameters on the Residual Strain in 3C-SiC Epitaxial Layers on (001) Silicon Island Formation of SiC Film on Striated Si(001) Substrates Structural and Morphological Characterization of 3C-SiC Films Grown on (111), (211) and (100) Silicon Substrates Heteroepitaxial Growth of 3C-SiC on Si (111) at Low Substrate Temperature by Plasma Assisted CVD Buckling Stabilization and Stress Reduction in SiC on Si by i-FLASiC Processing 3C-SiC Heteroepitaxy on (100), (111) and (110) Si Using Trichlorosilane (TCS) as the Silicon Precursor. Hetero-Epitaxial Growth of 3C-SiC with Smooth Surface on Si(001) Using Acetylene Gas Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer Characteristics of Polycrystalline 3C-SiC Thin Films Grown on AlN Buffer Layer by CVD Chapter 3: Physical Properties and Characterization of SiC 3.1 Milestones Aspects of Dislocation Behavior in SiC Investigation of Defect Formation in 4H-SiC(0001) and (000-1) Epitaxy Temperature Dependence of Shockley Stacking Fault Expansion and Contraction in 4H-SiC p-i-n Diodes EPR Identification of Defects and Impurities in SiC: To be Decisive Defects Identified in SiC and Their Implications Atomic and Electronic Structure of the (2x1) and c(2x2) 4H-SiC(1-102) Surfaces 3.2 Extended Defects Sense Determination of c-Axis Screw Dislocations in 4H-SiC Studies of the Distribution of Elementary Threading Screw Dislocations in 4H Silicon Carbide Wafer High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers Observation of Misfit Dislocations Introduced by Epi-Layer Growth on 4H-SiC Dislocation Contrast of 4H-SiC in X-Ray Topography under Weak-Beam Condition Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth Contrast of Basal Plane and Threading Edge Dislocations in 4H-SiC by X-Ray Topography in Grazing Incidence Geometry Slip of Basal Plane Dislocations in 4H-SiC Epitaxy Pair-Generation of the Basal-Plane-Dislocation during Crystal Growth of SiC Characterization of Dislocations and Micropipes in 4H n+ SiC Substrates Raman Scattering Study of Stress Distribution around Dislocation in SiC Stacking Fault Formation in Highly Nitrogen-Doped 4H-SiC Substrates with Different Surface Preparation Conditions Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers Expansion of Stacking Faults in 4H-SiC Epitaxial Layer under Laser Light Excitation during Room Temperature Photoluminescence Mapping Expansion of Stacking Faults by Electron-Beam Irradiation in 4H-SiC Diode Structure Synchrotron X-Ray Topographic Studies of Recombination Activated Shockley Partial Dislocations in 4H-Silicon Carbide Epitaxial Layers X-Ray Rocking Curve Characterization of SiC Substrates TEM Observation of the Polytype Transformation of Bulk SiC Ingot Structural Analysis of Off-Axis SiC Planes for the Growth of SiC and AlGaN Films Delineation of Defects Reducing Schottky Barrier Heights on 4H-SiC by the Electrochemical Deposition Investigation of Pits Formed at Oxidation on 4H-SiC 3.3 Point Defects Intrinsic Defects in HPSI 6H-SiC: an EPR Study Defect Level of the Carbon Vacancy-Carbon Antisite Pair Center in SI 4H SiC Behavior of Native Defects in Semi-Insulating 4H-SiC after High Temperature Anneals and Different Cool-Down Rates Characterization of Traps in Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy The Electronic Structure of the UD-4 Defect in 4H, 6H and 15R SiC Deep Levels Responsible for Semi-Insulating Behavior in Vanadium-Doped 4H-SiC Substrates Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material Photo-EPR Study of Vacancy-Type Defects in Irradiated n-Type 4H-SiC New Type of Defects Explored by Theory: Silicon Interstitial Clusters in SiC Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy Search for Hydrogen Related Defects in p-Type 6H and 4H-SiC Carrier Removal in Electron Irradiated 4H and 6H SiC Evolution of D1-Defect Center in 4H-SiC during High Temperature Annealing The Formation and Annealing of Carbon Interstitial-Related Complexes in Electron-, Proton- and Helium Irradiated 4H SiC Identification of Neutral Carbon Vacancy-Carbon Anti-Site Complex by Low Temperature Photoluminescence Spectroscopy 3.4 Impurities Ionization Energies of Phosphorus Donors in 6H-SiC Wave-Function Symmetry and the Properties of Shallow P Donors in 4H SiC Infrared PL Signatures of n-Type Bulk SiC Substrates with Nitrogen Impurity Concentration between 1016 and 1017 cm-3 A Comparison of Transient Boron Diffusion in Silicon, Silicon Carbide and Diamond Diffusion and Electroluminescence Studies of Low Temperature Diffusion of Boron in 3C-SiC Titanium Related Luminescence in SiC Raman Investigation of the Effect of Metal Impurities at Gettering Sites on Phonon and Electron Related Properties of 4H-SiC n-n+ Junctions 3.5 Surface Nitrogen Passivation of (0001) 4H-SiC Dangling Bonds Origin of Giant Step Bunching on 4H-SiC (0001) Surfaces 3.6 Fundamental Properties Enhanced Annealing of the Main Lifetime Limiting Defect in Thick 4H-SiC Layers Impact of 4H-SiC Substrate Defectivity on Epilayer Injected Carrier Lifetimes Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers Variations in the Measured Carrier Lifetimes of n- 4H-SiC Epilayers Investigation of the Internal Carrier Distribution in 4H-SiC Pin-Diodes by Laser Absorption Experiments Computational Evaluation of Electrical Conductivity on SiC and the Influence of Crystal Defects Characterization of Electrical Properties in SiC Crystals by Raman Scattering Spectroscopy Raman Characteristics of Poly 3C-SiC Thin Films Deposited on AlN Buffer Layer Characterization of Electronic Properties of Different SiC Polytypes by All-Optical Means The Specific Features of High-Field Transport in SiC Polytypes Thermal Expansion Coefficients of 6H Silicon Carbide Studies of Thermal Anisotropy in 4H-, 6H-SiC Bulk Single Crystal Wafers by Photopyroelectric (PPE) Method Improvement of the Thermal Conductivity in 4H-SiC Epitaxial Layer by Introducing Gettering Sites Optical Study of Ge Incorporation in Cubic SiC Layers Grown by VLS SiC Polytype Stability Influenced by Ge Impurities Space Charge Waves in 6H-SiC and 4H-SiC Galvanomagnetic Properties of 3C-SiC/6H-SiC Heterostructures 3.7 Wafer Mapping and Characterization Techniques Rapid Characterization of SiC Crystals by Full-Wafer Photoluminescence Imaging under Below-Gap Excitation Mapping of Defects in Large-Area Silicon Carbide Wafers via Photoluminescence and its Correlation with Synchrotron White Beam X-Ray Topography Imaging and Metrology of Silicon Carbide Wafers by Laser-Based Optical Surface Inspection System Contactless Topographic Analysis of Locally Inhomogeneous Resistivity in SiC and Cd(Zn)Te Chapter 4: SiC Nanostructures and Graphene Evolution and Structure of Graphene Layers on SiC(0001) Graphene Layers on Silicon Carbide Studied by Raman Spectroscopy Dots Formation by CVD in the SiC-Si Hetero-System Electronic Band Structure of Cubic Silicon Carbide Nanowires Theoretical Comparison of 3C-SiC and Si Nanowire FETs in Ballistic Regime Chapter 5: Processing of SiC 5.1 Milestones Crystalline Recovery after Activation Annealing of Al Implanted 4H-SiC Dynamical Simulation of SiO2/4H-SiC Interface on C-Face Oxidation Process: From First Principles Influence of the Oxidation Temperature and Atmosphere on the Reliability of Thick Gate Oxides on the 4H-SiC C(000-1) Face 5.2 Implantation and Doping Annealing Temperature Dependence of the Electrically Active Profiles and Surface Roughness in Multiple Al Implanted 4H-SiC Dual-Pearson Approach to Model Ion-Implanted Al Concentration Profiles for High-Precision Design of High-Voltage 4H-SiC Power Devices Detection and Characterization of Defects Induced by Ion Implantation/Annealing Process in SiC Depth Profiling of Al Ion-Implantation Damage in SiC Crystals by Cathodoluminescence Spectroscopy Compensation Effects in 7 MeV C Irradiated n-Doped 4H-SiC Structure and Lattice Location of Ge Implanted 4H-SiC Laser Doping of Chromium and Selenium in p-Type 4H-SiC 5.3 Contacts and Etching Phase Formation and Growth Kinetics of an Interface Layer in Ni/SiC Backside Nickel Based Ohmic Contacts to n-Type Silicon Carbide Comparison of Electrical Properties of Ohmic Contact Realized on p-Type 4H-SiC Electrical Characteristics of Ti/4H-SiC Slicidation Schottky Barrier Diode Investigation of Subcontact Layers in SiC after Diffusion Welding Isotropic Etching of SiC 4H Silicon Carbide Etching Using Chlorine Trifluoride Gas Anisotropic Etching of SiC in the Mixed Gas of Chlorine and Oxygen 5.4 Oxides and Other Dielectrics Model Calculation of SiC Oxidation Rates in the Thin Oxide Regime Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In Situ Spectroscopic Ellipsometry TEM Observation of SiO2/4H-SiC Hetero Interface Influence of Metallization Annealing on Channel Mobility in 4H-SiC MOSFET on Carbon Face Enhanced Channel Mobility in 4H-SiC MISFETs by Utilizing Deposited SiN/SiO2 Stack Gate Structures Anomalously High Channel Mobility in SiC-MOSFETs with Al2O3/SiOx/SiC Gate Structure Scattering Mechanisms in Silicon Carbide MOSFETs with Gate Oxides Fabricated Using Sodium Enhanced Oxidation Technique High Channel Mobility of MOSFET Fabricated on 4H-SiC (11-20) Face Using Wet Annealing High Channel Mobility of 4H-SiC MOSFET Fabricated on Macro-Stepped Surface Improvement of Electron Channel Mobility in 4H SiC MOSFET by Using Nitrogen Implantation Reduction of Interface Traps and Enhancement of Channel Mobility in n-Channel 6H-SiC MOSFETs by Irradiation with Gamma-Rays Effects of Fabrication Process on the Electrical Characteristics of n-Channel MOSFETs Irradiated with Gamma-Rays 4H-SiC p-Channel MOSFETs with Epi-Channel Structure Atomistic Scale Modeling of Factors Affecting the Channel Mobility in 4H-SiC MOSFETs Electrically Detected Magnetic Resonance Studies of Processing Variations in 4H SiC Based MOSFETs The Inefficiency of H2-Passivation as a Criterion for the Origin of SiC/SiO2 Deep Interface States - a Theoretical Study Two Different Species of Traps Monitored at N-Implanted 3C-SiC MOS Capacitors by Conductance Spectroscopy Effect of Post-Oxidation Annealing on High-Temperature Grown SiO2/4H-SiC Interface Influence of Ambient, Gate Metal and Oxide Thickness on Interface State Density and Time Constant in MOSiC Capacitor High Frequency Inversion Capacitance Measurements for 6H-SiC n-MOS Capacitors from 450 to 600 DegreesC The Effect of Nitridation on SiC MOS Oxides as Evaluated by Charge Pumping Criteria for Accurate Measurement of Charge-Pumping Current in 4H-SiC MOSFETs Optimization of 4H-SiC MOS Properties with Cesium Implantation A Study of Deep Energy-Level Traps at the 4H-SiC/SiO2 Interface and Their Passivation by Hydrogen Interface and Carrier Transport Behaviour in Al/HfO2/SiO2/SiC Structure Improved Properties of AlON/4H SiC Interface for Passivation Studies Influence of Annealing on the Al2O3/4H-SiC Interface Post Metallization Annealing Characterization of Interface Properties of High- Dielectrics Stack on Silicon Carbide Correlation between Thermal Oxide Breakdown and Defects in n-Type 4H-SiC Epitaxial Wafers Reliability of Thermal Oxides Grown on n-Type 4H-SiC Implanted with Low Nitrogen Concentration Impact of the Wafer Quality on the Reliability of MOS Structure on the C-Face of 4H-SiC Gate-Area Dependence of SiC Thermal Oxides Reliability Effect of Gate Wet Reoxidation on Reliability and Channel Mobility of Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated on 4H-SiC(000-1) Negative Field Reliability of ONO Gate Dielectric on 4H-SiC TDDB Measurement of Gate SiO2 on 4H-SiC Formed by Chemical Vapor Deposition Impact of Nitridation on Negative and Positive Charge Buildup in SiC Gate Oxides Temperature-Dependence of SiC MOSFET Threshold-Voltage Instability Characteristics of Sol-Gel Derived SiO2 Thick Film on 4H-SiC 5.5 Polishing and Related Processes New Chemical Planarization of SiC and GaN Using an Fe Plate in H2O2 Solution Development of Lapping and Polishing Technologies of 4H-SiC Wafers for Power Device Applications Improvements in Electrical Properties of SiC Surface Using Mechano-Chemical Polishing The Impact of Chemical-Mechanical Polishing on Defective 4H-SiC Schottky Barrier Diodes Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001) Damage-Free Planarization of 2-Inch 4H-SiC Wafer Using Pt Catalyst Plate and HF Solution The Preparation of World-Class Single Crystal Silicon Carbide Wafers Using High Rate Chemical Mechanical Planarization Slurries Beveling of Silicon Carbide Wafer by Plasma Chemical Vaporization Machining Temperature Dependence of Plasma Chemical Vaporization Machining of Silicon and Silicon Carbide Electric Discharge Machining for Silicon Carbide and Related Materials Characterization of Electric Discharge Machining for Silicon Carbide Single Crystal 5.6 Micromachining and MEMS A Silicon Carbide Accelerometer for Extreme Environment Applications An Examination of Material-Related Performance in SiC Heated Elements for IR Emitter and Sensor Applications Mechanical Properties of Poly 3C-SiC Thin Films According to Carrier Gas (H2) Concentration Novel Use of Columnar Porous Silicon Carbide Structures as Nanoimprint Lithography Stamps Etching Characteristics of Polycrystalline 3C-SiC Films Using Enhanced RIE Femtosecond Laser-Induced Surface Patterning on 4H-SiC Cross-Sectional TEM Analysis of Structural Change in 4H-SiC Single Crystal Irradiated by Femtosecond Laser Pulses Chapter 6: SiC Devices 6.1 Milestones Present Status and Future Prospects for Electronics in EVs/HEVs and Expectations for Wide Bandgap Semiconductor Devices Critical Technical Issues in High Voltage SiC Power Devices SiC JFET: Currently the Best Solution for an Unipolar SiC High Power Switch Challenges of 4H-SiC MOSFETs on the C(000-1) Face toward the Achievement of Ultra Low On-Resistance Normally-Off 1400V/30A 4H-SiC DACFET and its Application to DC-DC Converter Applications-Based Design of SiC Technology New Applications in Power Electronics Based on SiC Power Devices 6.2 Schottky Barrier Diodes Development of Large Area (up to 1.5 cm2) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers Reliability Aspects of High Voltage 4H-SiC JBS Diodes 1200-V JBS Diodes with Low Threshold Voltage and Low Leakage Current High-Current 10 kV SiC JBS Rectifier Performance 5 kV, 9.5 A SiC JBS Diodes with Non-Uniform Guard Ring Edge Termination for High Power Switching Application 10 kV Silicon Carbide Junction Barrier Schottky Rectifier Breakdown Behavior of 900-V 4H-SiC Schottky Barrier Diodes Terminated with Boron-Implanted pn-Junction Effect of the Doping Concentration and Space of Both p-Grid and Field Limiting Ring on 4H-SiC Junction Barrier Schottky Diode with Single Ion Implantation Process Structure Analysis of In-Grown Stacking Faults and Investigation of the Cause for High Reverse Current of 4H-SiC Schottky Barrier Diode Characterization of Schottky Diodes on 4H-SiC with Various Off-Axis Angles Grown by Sublimation Epitaxy Schottky Barrier Diode Fabricated by MOCVD-Grown Epilayer Using Bis-Trimethylsilylmethane Precursor Device Simulation Model for Transient Analysis of SiC-SBD Distribution of Forward Voltage of SiC Schottky Barrier Diode Using Ti Sintering Process Impact of High-k Dielectrics on Breakdown Performances of SiC and Diamond Schottky Diodes Field-Plate Terminated Pt/n- 4H-SiC SBD Using Thermal SiO2 and Sputter Deposited AlN Dielectric Stack 6.3 PiN Diodes 3.3 kV-10A 4H-SiC PiN Diodes Bevel Mesa Combined with Implanted Junction Termination Structure for 10 kV SiC PiN Diodes Observation of Crystalline Defects Causing pn Junction Reverse Leakage Current Comparative Evaluation of Anode Layers on the Electrical Characteristics of High Voltage 4H-SiC PiN Diodes Self-Heating of 4H-SiC PiN Diodes at High Current Densities Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diodes Novel SiC Zener Diodes with High Operating Temperature of 300 DegreesC and High Power Density of 40 kW/cm2 Microwave Switches and Modulators Based on 4H-SiC p-i-n Diodes Annealing Effect on Characteristics of p+n 4H-SiC Diode Formed by Al Ion Implantation Room Temperature Annealing Effects on Leakage Current of Ion Implanted p+n 4H-SiC Diodes Determination of Ambipolar Lifetime and Epilayer Thickness of 5kV SiC Bipolar Devices by Transient Switching Studies Numerical Evaluation of Forward Voltage in SiC Pin Diode with Non-Ohmic Current Component in Contact to p-Type Layer Transient Response to High Energy Heavy Ions in 6H-SiC n+p Diodes Degradation of Charge Collection Efficiency for 6H-SiC Diodes by Electron Irradiation 6.4 JFETs and MESFETs 1200-V, 50-A, Silicon Carbide Vertical Junction Field Effect Transistors for Power Switching Applications High-Temperature Static and Dynamic Reliability Study of 4H-SiC Vertical-Channel JFETs for High-Power System Applications High-Temperature Operation of 50 A (1600 A/cm2), 600 V 4H-SiC Vertical-Channel JFETs for High-Power Applications Normally-Off 4H-SiC Vertical JFET with Large Current Density Silicon Carbide Vertical JFET Operating at High Temperature Switching Performance of Epitaxially Grown Normally-Off 4H-SiC JFET 1270V, 1.21m cm2 SiC Buried Gate Static Induction Transistors (SiC-BGSITs) Three Dimensional Analysis of Turnoff Operation of SiC Buried Gate Static Induction Transistors (BG-SITs) Fabrication and Testing of 6H-SiC JFETs for Prolonged 500 DegreesC Operation in Air Ambient Silicon Carbide Differential Amplifiers for High-Temperature Sensing SiC Lateral Trench JFET for Harsh-Environment Wireless Systems Development of High Temperature Lateral HV and LV JFETs in 4H-SiC Fast Switching Characteristics of 4H-SiC RESURF-Type JFET 6H-SiC Lateral JFETs for Analog Integrated Circuits Influence of Passivation Oxide Properties on SiC Field-Plated Buried Gate MESFETs RF Characteristics of a Fully Ion-Implanted MESFET with Highly Doped Thin Channel Layer on a Bulk Semi-Insulating 4H-SiC Substrate. Measurement of Local Temperatures Using -Raman of SiC and AlGaN-GaN/SiC Power and RF Devices 6.5 MOSFETs Normally-Off 4H-SiC Power MOSFET with Submicron Gate (11-20) Face Channel MOSFET with Low On-Resistance Investigation into Short-Circuit Ruggedness of 1.2 kV 4H-SiC MOSFETs Effect of Recombination-Induced Stacking Faults on Majority Carrier Conduction and Reverse Leakage Current on 10 kV SiC DMOSFETs 950 Volt 4H-SiC MOSFETs: DC and Transient Performance and Gate Oxide Reliability Evaluation of 4H-SiC DMOSFETs for High-Power Electronics Applications Comparison of 10 kV 4H-SiC Power MOSFETs and IGBTs for High Frequency Power Conversion On-State and Switching Performance of High-Voltage 15 - 20 kV 4H-SiC DMOSFETs and IGBTs Temperature and Time Dependent Threshold Voltage Instability in 4H-SiC Power DMOSFET Devices 6.6 Bipolar Transistors and Thyristors 1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-Resistance 1600 V, 5.1 m cm2 4H-SiC BJT with a High Current Gain of =70 4H-SiC Bipolar Junction Transistors with a Current Gain of 108 Simulation and Modeling of Thermal Effects in 4H-SiC NPN BJTs Reliability Testing of 4H-SiC Bipolar Junction Transistors in Continuous Switching Applications A Simple and Reliable Electrical Method for Measuring the Junction Temperature and Thermal Resistance of 4H-SiC Power Bipolar Junction Transistors Behavior of Stacking Faults in TEDREC Phenomena for 4.5 kV SiCGT Electron Irradiation Lifetime Control for SiC Bipolar Devices of 200 kVA High Power SiC Inverters A 13 kV 4H-SiC n-Channel IGBT with Low Rdiff,on and Fast Switching 12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance Design, Simulation, and Characterization of High-Voltage SiC p-IGBTs SiC Based Optically-Gated High-Power Solid-State Switch for Pulsed-Power Application 6.7 Sensors and Detectors Hydrogen Gas Sensors Fabricated on Atomically Flat 4H-SiC Webbed Cantilevers 4H-SiC Single Photon Avalanche Diode for 280nm UV Applications Avalanche Multiplication and Impact Ionisation in Separate Absorption and Multiplication 4H-SiC Avalanche Photodiodes Observation of Luminescence from Defects in 4H-SiC APDs Operating in Avalanche Breakdown Schottky Barrier Lowering in 4H-SiC Schottky UV Detector The Influence of Radiation Defects on the Charge Transport in SiC Nuclear Detectors in Conditions of Elevated Temperatures and Deep Compensation of the Conductivity 6.8 Packaging, Circuits, and System Applications High Power-Density SiC Converter 3D Thermal Stress Model for SiC Power Modules Efficiency Improvement of PV-Inverters with SiC-DMOSFETs A High Performance CCM PFC Circuit Using a SiC Schottky Diode and a Si SuperFETTM Switch Summary of SiC Research for Transportation Applications at ORNL Chapter 7: III-Nitrides and Other Related Materials 7.1 Milestones LPE Growth of Bulk GaN Crystal by Alkali-Metal Flux Method 600V GaN Schottky Barrier Power Devices for High Volume and Low Cost Applications Status of GaN-Based Power Switching Devices Progress in GaN MOSFET Technology 7.2 Growth of III-Nitrides Growth of Thick AlN Layers by High Temperature CVD (HTCVD) Epitaxial Lateral Overgrowth of (1-100) m-Plane GaN on m-Plane 6H-SiC by Metalorganic Chemical Vapor Deposition Growth and Characterization of AlGaN/GaN HEMT Structures on 3C-SiC/Si(111) Templates Semipolar Nitrides Grown on Si(001) Offcut Substrates with 3C-SiC Buffer Layers Surface Morphology of AlN Epitaxial Layer Grown on Various SiC Substrates by Sublimation Closed Space Technique Effects of 3C-SiC Intermediate Layer on the Properties of AlN Films Grown on SiO2/Si Substrate 7.3 Physical Properties and Characterization of III-Nitrides Raman Scattering Analysis of Electrical Property and Crystallinity in Freestanding GaN Crystals with Various Impurity Concentrations Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy Optical Characterization of Defect-Related Carrier Recombination and Transport Features in GaN Substrates and CVD Diamonds Characterization of V-Defects in InGaN Single-Quantum-Well Films at Nanometer Level by High Spatial Resolution Cathodoluminescence Spectroscopy Correlation between Screw Dislocations Distribution and Cathodoluminescence Spectra of InGaN Single Quantum Well Films Material Properties of GaN Films Grown on SiC/SOI Substrate HRTEM Analysis of AlN Layer Grown on 3C-SiC/Si Heteroepitaxial Substrates with Various Surface Orientations 7.4 III-Nitride Devices 288 V-10 V DC- DC Converter Application Using AlGaN/GaN HFETs Multiple Ion-Implanted GaN/AlGaN/GaN HEMTs with Remarkably Low Parasitic Source Resistance Current Collapse in AlGaN/GaN/AlGaN Double Heterojunction Field Effect Transistors Current Collapse Characteristic of AlGaN/GaN MIS-HEMT The Effect of Ohmic Contact Location on the Buffer Leakage Current of AlGaN/GaN Heterostructure Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier Effect of Deep Trap on Breakdown Voltage in AlGaN/GaN HEMTs 7.5 Other Related Materials DC and RF Performance of Diamond MISFETs with Alumina Gate Insulator Diamond Doped by Hot Ion Implantation Characterization of Nanometer-Sized ZnO by Raman and Cathodoluminescence Spectroscopies Annealing Behavior of Defects in Multiple-Energy Nitrogen Implanted ZnO Bulk Single Crystal

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詳細情報

• NII書誌ID(NCID): BA89074033
• ISBN:
  • 9780878493579
• 出版国コード: sz
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: Stafa-Zurich
• ページ数/冊数: 2 v. (1382 p.)
• 大きさ: 25 cm.
• 付属資料: 1CD-ROM (4 3/4 in.)
• 分類:
  • LCC : QC611.8.S5
  • LCC : TA401.3
  • DC22 : 620.193
• 件名:
  • LCSH : Silicon carbide -- Congresses
  • LCSH : Silicon carbide -- Electric properties -- Congresses
  • FREE : ICSCRM
• 親書誌ID:
  • BA00294222