Fundamentals of modern VLSI devices

著者

書誌事項

Fundamentals of modern VLSI devices

Yuan Taur, Tak H. Ning

Cambridge University Press, 2009

2nd ed

  • : hbk

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注記

Includes bibliographical references (p. [623]-643) and index

内容説明・目次

内容説明

Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.

目次

  • Physical constants and unit conversions
  • List of symbols
  • Preface to the second edition
  • Preface to the first edition
  • 1. Introduction
  • 2. Basic device physics
  • 3. MOSFET devices
  • 4. CMOS device design
  • 5. CMOS performance factors
  • 6. Bipolar devices
  • 7. Bipolar device design
  • 8. Bipolar performance factors
  • 9. Memory devices
  • 10. Silicon-on-insulator devices
  • Appendices: 1. CMOS process flow
  • 2. Outline of a process for fabricating modern n-p-n bipolar transistors
  • 3. Einstein relations
  • 4. Spatial variation of quasi-Fermi potentials
  • 5. Generation and recombination processes and space-charge-region current
  • 6. Diffusion capacitance of a p-n diode
  • 7. Image-force-induced barrier lowering
  • 8. Electron-initiated and hole-initiated avalanche breakdown
  • 9. An analytical solution for the short-channel effect in subthreshold
  • 10. Generalized MOSFET scale length model
  • 11. Drain current model of a ballistic MOSFET
  • 12. Quantum-mechanical solution in weak inversion
  • 13. Power gain of a two-port network
  • 14. Unity-gain frequencies of a MOSFET transistor
  • 15. Determination of emitter and base series resistances
  • 16. Intrinsic-base resistance
  • 17. Energy-band diagram of a Si-SiGe n-p diode
  • 18. fr and fmax of a bipolar transistor
  • References
  • Index.

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