Advanced gate stacks for high-mobility semiconductors
著者
書誌事項
Advanced gate stacks for high-mobility semiconductors
(Advanced microelectronics, 27)
Springer, c2007
- hbk.
大学図書館所蔵 件 / 全2件
-
該当する所蔵館はありません
- すべての絞り込み条件を解除する
注記
Includes bibliographical references and index
内容説明・目次
内容説明
This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.
目次
Strained-Si CMOS Technology.- High Current Drivability MOSFET Fabricated on Si(110) Surface.- Advanced High-Mobility Semiconductor-on-Insulator Materials.- Passivation and Characterization of Germanium Surfaces.- Interface Engineering for High-? Ge MOSFETs.- Effect of Surface Nitridation on the Electrical Characteristics of Germanium High-?/Metal Gate Metal-Oxide-Semiconductor Devices.- Modeling of Growth of High-? Oxides on Semiconductors.- Physical, Chemical, and Electrical Characterization of High-? Dielectrics on Ge and GaAs.- Point Defects in Stacks of High-? Metal Oxides on Ge: Contrast with the Si Case.- High ? Gate Dielectrics for Compound Semiconductors.- Interface Properties of High-? Dielectrics on Germanium.- A Theoretical View on the Dielectric Properties of Crystalline and Amorphous High-? Materials and Films.- Germanium Nanodevices and Technology.- Opportunities and Challenges of Germanium Channel MOSFETs.- Germanium Deep-Submicron p-FET and n-FET Devices, Fabricated on Germanium-On-Insulator Substrates.- Processing and Characterization of III-V Compound Semiconductor MOSFETs Using Atomic Layer Deposited Gate Dielectrics.- Fabrication of MBE High-? MOSFETs in a Standard CMOS Flow.
「Nielsen BookData」 より