Low power and reliable SRAM memory cell and array design

著者

    • Ishibashi, Koichiro
    • Osada, Kenichi

書誌事項

Low power and reliable SRAM memory cell and array design

Koichiro Ishibashi, Kenichi Osada, editors

(Advanced microelectronics, 31)

Springer, c2011

  • hbk.

大学図書館所蔵 件 / 2

この図書・雑誌をさがす

注記

Includes bibliographical references and index

内容説明・目次

内容説明

Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.

目次

Preface.- Introduction.- Fundamentals of SRAM Memory Cell.- Electrical Stability.- Sensitivity Analysis.- Memory Cell Design Technique for Low Power SOC.- Array Design Techniques.- Dummy Cell Design.- Reliable Memory Cell Design.- Future Technologies

「Nielsen BookData」 より

関連文献: 1件中  1-1を表示

詳細情報

  • NII書誌ID(NCID)
    BB07915154
  • ISBN
    • 9783642195679
  • 出版国コード
    gw
  • タイトル言語コード
    eng
  • 本文言語コード
    eng
  • 出版地
    Heidelberg ; London
  • ページ数/冊数
    xi, 143 p.
  • 大きさ
    25 cm
  • 親書誌ID
ページトップへ