Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

著者

• International Conference on Silicon Carbide and Related Materials
• Devaty, Robert P.
• Dudley, Michael
• Chow, T. Paul
• Neudeck, Philip G.

書誌事項

Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA

edited by, Robert P. Devaty ... [et al.]

（Materials science forum, v. 717-720）

Trans Tech Publications, c2012

• : set
• pt. 1
• pt. 2

タイトル別名

ICSCRM 2011 : Clevelamd, Ohio・USA

注記

Includes bibliographical references and index

内容説明・目次

内容説明

The aim of this special collection of peer-reviewed papers is to present recent progress in crystal growth, in the characterization and control of material properties, as well as in other basic research issues concerning silicon carbide (SiC) and other wide-bandgap semiconductors such as group-III nitrides and diamond. The latest research results relevant to wafer production processes, device fabrication technologies and device applications are discussed. These included the latest results in the development and commercialization of advanced devices and circuits used for energy saving, high-voltage switching, high-frequency high-power amplification and high-temperature operation. Work on the growth, characterization and device exploitation of epitaxial graphene was also covered. Evolving industrial products and capabilities were also highlighted. Volume is indexed by Thomson Reuters CPCI-S (WoS).

目次

Preface, Sponsors, Committes and Overview Chapter 1: SiC Bulk Growth 1.1 PVT, CVD, Modeling and Theory Status of Large Diameter SiC Single Crystals TSD Reduction by RAF (Repeated a-Face) Growth Method Growth of High Quality 4H-SiC Crystals in Controlled Temperature Distributions of Seed Crystals Process and Crucible Modification for Growth of High Doped 4H-SiC Crystal with Larger Diameter Fundamental Study of Sublimation-Recrystallization Phenomena in PVT-Growth of SiC Single Crystals Analysis of Growth Velocity of Si Growth by the Physical Vapor Transport Method Effect of Nitrogen Doping on the Growth of 4H Polytype on the 6H-SiC Seed by PVT Method Lateral Growth Expansion of 4H/6H-Si M-Plane Pseudo Fiber Crystals by Hot Wall CVD Epitaxy Synthesis and Purification of Silicon Carbide Powders for Crystal Growth Bulk and Surface Effects on the Polytype Stability in SiC Crystals 1.2 Solution Growth Crystallinity Evaluation of 4H-SiC Single Crystal Grown by Solution Growth Technique Using Si-Ti-C Solution SiC Growth by Solvent-Laser Heated Floating Zone Stable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution Growth Control of Void Formation in 4H-SiC Solution Growth Top-Seeded Solution Growth of 4H-SiC Bulk Crystal Using Si-Cr Based Melt Growth of a Thick 2H-SiC Layer in Si-Li Solution under a Continuous CH4 Flow Growth Rate Prediction in SiC Solution Growth Using Silicon as Solvent Chapter 2: SiC Epitaxial Growth 2.1 Homoepitaxial Growth SiC Epitaxial Layer Growth in a 6x150 mm Warm-Wall Planetary Reactor Growth of 4H-SiC Epilayers and Z1/2 Center Elimination Growth and Light Properties of Fluorescent SiC for White LEDs High Uniformity with Reduced Surface Roughness of Chloride Based CVD Process on 100mm 4 Degrees Off-Axis 4H-SiC Epitaxial Growth of 4H-Si Using Si2(CH3)6+Si2Cl6+C3H8+H2 System by Atmospheric Pressure Hot CVD Method 4H-SiC Epitaxial Growth on 2 Degrees Off-Axis Substrates using Trichlorosilane (TCS) Development of Vertical 3x2 LPCVD System for Fast Epitaxial Growth on 4H-SiC Carrot Defect Control in Chloride-Based CVD through Optimized Ramp up Conditions Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles Comparison of 4H Silicon Carbide Epitaxial Growths at Various Growth Pressures Using Dicholorosilane and Silane Gases In-Grown Stacking Faults in SiC-CVD Using Dichlorosilane and Propane as Precursors Investigation of Basal Plane Dislocation Reduction/Elimination by Molten KOH-NaOH Eutectic Etching Method Electrical and Optical Properties of High-Purity Epilayers Grown by the Low-Temperature Chloro-Carbon Growth Method Use of Vanadium Doping for Compensated and Semi-Insulating SiC Epitaxial Layers for SiC Device Applications Progress in Growth of Thick Epitaxial Layers on 4 Degree Off-Axis 4H SiC Substrates Improvement of Homoepitaxial Layer Quality Grown on 4H-Si Si-Face Substrate Lower than 1 Degree Off Angle Surface Morphology Evolution after Epitaxial Growth on 4 DegreesOff-Axis 4H-SiC Substrate Study of the Impact of Growth and Post-Growth Processes on the Surface Morphology of 4H Silicon Carbide Films Behavior of Particles in the Growth Reactor and their Effect on Silicon Carbide Epitaxial Growth Influence of Growth Mechanism on Carrier Lifetime in On-Axis Homoepitaxial Layers of 4H-SiC The Effect of Growth Conditions on Carrier Lifetime in N-Type 4H-SiC Epitaxial Layers Study of the Lateral Growth by VLS Mechanism Using Al-Based Melts on Patterned Si Substrate Buried Selective Growth of p-Doped SiC by VLS Epitaxy Reliable Method for Eliminating Stacking Fault on 3C-SiC(001) 2.2 Heteroepitaxial and Heteropolytypic Growth Freestanding 3C-SiC Grown by Sublimation Epitaxy Using 3C-SiC Templates on Silicon Effect of Propane on Low Temperature Growth of 3C-SiC Film on Si (111) by Plasma Assisted CVD Low Temperature Epitaxy of 3C SiC Using Hexamethyldisilane Precursor on Si <111> Substrates CVD Heteroepitaxial Growth of 3C-SiC on 4H-SiC (0001) Substrates On Stabilization of 3C-SiC Using Low Off-Axis 6H-SiC Substrates SixCy Thin Films Deposited at Low Temperature by DC Dual Magnetron Sputtering: Effect of Power Supplied to Si and C Cathode Targets on Film Physicochemical Properties Chapter 3: Physical Properties and Characterization of SiC 3.1 Impurities, Intrinsic Point Defects and Carrier Lifetime Transition Metal Defects in Cubic and Hexagonal Polytypes of SiC: Site Selection, Magnetic and Optical Properties from Ab Initio Calculations Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC Identification of Niobium in 4H-SiC by EPR and Ab Initio Studies Mn Implantation for New Applications of 4H-SiC Diffusion and Gettering of Transition Metals in 4H-SiC Chlorine in SiC: Experiment and Theory Photoluminescence and Raman Spectroscopy Characterization of Boron- and Nitrogen-Doped 6H Silicon Carbide Simulation of the Temperature Dependence of Hall Carriers in Al Doped 4H-SiC Elimination of Deep Levels in Thick SiC Epilayers by Thermal Oxidation and Proposal of the Analytical Model On the Formation of Intrinsic Defects in 4H-SiC by High Temperature Annealing Steps Z1/2- and EH6-Center in 4H-SiC: Not Identical Defects ? Excitation Properties of Silicon Vacancy in Silicon Carbide Investigation of Intrinsic Carbon-Related Defects in 4H-SiC by Selective-Excitation Photoluminescence Spectroscopy Local Thermal Expansion and the C-C Stretch Vibration of the Dicarbon Antisite in 4H SiC Defects in an Electron-Irradiated 6H-SiC Diode Studied by Alpha Particle Induced Charge Transient Spectroscopy: Their Impact on the Degraded Charge Collection Efficiency Effects of Sacrifice Oxidation on Characterization of Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy Investigation of Additional States in the Silicon Carbide Surface after Diffusion Welding Long Carrier Lifetimes in n-Type 4H-SiC Epilayers Comparison of Post-Growth Carrier Lifetime Improvement Methods for 4H-SiC Epilayers Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation High-Resolution Time-Resolved Carrier Lifetime and Photoluminescence Mapping of 4H-SiC Epilayers Correlation of Extended Defects on Carrier Lifetime in Thick SiC Epilayers Characterization of Annealed HPSI 4H-SiC for Photoconductive Semiconductor Switches Correlation between Strain and Excess Carrier Lifetime in a 3C-SiC Wafer Carrier Diffusivity in Highly Excited Bulk SiC, GaN, and Diamond Crystals by Optical Probes 3.2 Extended Defects (See also Section 3.4) Critical Conditions of Misfit Dislocation Formation in 4H-SiC Epilayers Fourier Transform Analysis of Basal Plane Dislocation Structure in Repeated A-Face Grown Crystals X-Ray Three-Dimensional Topography Imaging of Basal-Plane and Threading-Edge Dislocations in 4H-SiC Basal Plane Dislocation Multiplication via the Hopping Frank-Read Source Mechanism and Observations of Prismatic Glide in 4H-SiC Identification of the Basal Plane Component of the Burgers Vector of Small Dislocations in 6H SiC Using Birefringence Microscopy Effects of Nitrogen Doping on the Morphology of Basal Plane Dislocations in 4H-SiC Epilayers Analysis of Dislocations Nucleated after Nano Indentation Tests at Room Temperature in 4H-SiC Synchrotron X-Ray Topography Studies of the Propagation and Post-Growth Mutual Interaction of Threading Growth Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC Deflection of Threading Dislocations with Burgers Vector c/c+a Observed in 4H-SiC PVT-Grown Substrates with Associated Stacking Faults Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth Complex Behavior of Threading Dislocations Observed in PVT-Grown 4H-SiC Single Crystals Correlation between Surface Morphological Defects and Crystallographic Defects in SiC Characterization of Triangular-Defects in 4 Degrees off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Transmission Electron Microscopy Variation of Etch Pit Size by Screw Dislocation Tilt in 4H-SiC Wafer Critical Density of Nanoscale Pits for Suppressing Variability in Leakage Current of a SiC Schottky Barrier Diode Surface Morphology of Leakage Current Sources of 4H-SiC Schottky Barrier Diodes by Atomic Force Microscope Density and Behavior of Etch Pits on C-Face 4H-SiC Surface Produced by CIF3 Gas Dislocation Formation in Epitaxial Film by Propagation of Shallow Dislocations on 4H-SiC Substrate Effect of Stacking Faults Originating from Half Loop Arrays on Electrical Behavior of 10 kV 4H-SiC PiN Diodes Ultraviolet Photoluminescence Imaging of Stacking Fault Contraction in 4H-SiC Epitaxial Layers Photoluminescence Study of the Driving Force for Stacking Fault Expansion in 4H-SiC Room Temperature Photoluminescence from 4H-SiC Epilayers: Non-Destructive Estimation of In-Grown Stacking Fault Density Luminescence Imaging of Extended Defects in SiC via Hyperspectral Imaging Low Temperature Photoluminescence Signature of Stacking Faults in 6H-SiC Epilayers Grown on Low Angle Off-Axis Substrates Interaction of 6H-Type Stacking Faults with Threading Screw Dislocations in PVT-Grown 4H-SiC Single Crystals Ab Initio Calculation of Mechanical Properties of Stacking Fault in 3C-SiC: Effect of Stress and Doping On the Twin Boundary Propagation in (111) 3C-SiC Layers Defect Structures at the Silicon/3C-SiC Interface 3.3 SiC-SiO2 Interface (See also Sections 5.1 and 6.4) Electrically Detected Magnetic Resonance (EDMR) Studies of SiC-SiO2 Interfaces Definitive Identification of an Important 4H SiC MOSFET Interface/Near Interface Trap Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs Sub-Bandgap Light-Induced Carrier Generation at Room Temperature in Silicon Carbide MOS Capacitors Oxidation-Induced Epilayer Carbon Di-Interstitials as a Major Cause of Endemically Poor Mobilities in 4H-SiC/SiO2 Structures Silicon Carbide-Silicon Dioxide Transition Layer Mobility Sodium, Rubidium and Cesium in the Gate Oxides of SiC MOSFETs Total Near Interface Trap Density Calculation of 4H-SiC/SiO2 Structures before and after Nitrogen Passivation Detection of Mobile Ions in the Presence of Charge Trapping in SiC MOS Devices Two-Way Tunneling Model of Oxide Trap Charging and Discharging in SiC MOSFETs Peak Degradation of Heavy-Ion Induced Transient Currents in 6H-SiC MOS Capacitors Low Frequency Noise in 4H-SiC Lateral JFET Structures 3.4 Stress, Structural and Mechanical Properties (See also Section 3.2) Influence of Threading Dislocations on Lifetime of Gate Thermal Oxide Doping-Induced Lattice Mismatch and Misorientation in 4H-SiC Crystals Strain Build-Up, Swelling and Stacking Fault Formation in Implanted 4H-SiC High Resolution X-Ray Diffraction (HRXRD) Studies of the Initial Stages of PVT-Growth of 4H-SiC Crystals On the Stability of 3C-SiC Single Crystals at High Temperatures XRD Characterization for Al- and N-Doped 3C-SiC on Si (100) Substrate after Pulsed Excimer Laser Anneal Origin of the Warpage of 3C-SiC Wafer: Effect of Nonuniform Intrinsic Stress Raman Scattering and X-Ray Absorption from CVD Grown 3C-SiC on Si 4H-SiC Wafers Studied by X-Ray Absorption and Raman Scattering Mechanical Properties of Cubic SiC, GaN and AlN Thin Films Extended Characterization of the Stress Fields in the Heteroepitaxial Growth of 3C-SiC on Silicon for Sensors and Device Applications Stress Evaluation on Hetero-Epitaxial 3C-SiC Film on (100) Si Substrates Micro-Raman Analysis of a Micromachined 3C-SiC Cantilever Single-Crystal SiC Resonators by Photoelectrochemical Etching Amorphous Silicon Carbide ( -SiC) Thin Square Membranes for Resonant Micromechanical Devices Amorphous Silicon Carbide as a Non-Biofouling Structural Material for Biomedical Microdevices 3.5 Fundamental Properties, Nanostructures, Surfaces and Miscellaneous Characterization Seebeck Coefficient of Heavily Doped Polycrystalline 3C-SiC Deposited by LPCVD OBIC Measurements on Avalanche Diodes in 4H-SiC for the Determination of Impact Ionization Coefficients Radiation Hardness of Wide-Bandgap Materials as Exemplified by SiC Nuclear Radiation Detectors Terahertz Electroluminescence of 6H-SiC Natural SiC Superlattice in Bloch Oscillations Regime Emission Enhancement of SiC/SiO2 Core/Shell Nanowires Induced by the Oxide Shell Theoretical Study of Thermoelectric Properties of SiC Nanowires GaAs Nanowires: A New Place to Explore Polytype Physics The Atomic Step Induced by off Angle CMP Influences the Electrical Properties of the SiC Surface Surface Phase Diagram of 4H-SiC {0001} Step-Terrace Structures during Si-Vapor Etching in a TaC Crucible Morphological Instability of 4H-SiC (0001) Basal Plane Surface during Si-Vapor Thermal Etching First-Principles Analysis of Dissociative Absorption of HF Molecule at SiC Surface Step Edge Characterization of Photoelectrochemical Properties of SiC as a Water Splitting Material Room Temperature Physical Characterization of Implanted 4H- and 6H-SiC Chapter 4: Graphene 4.1 Graphene Growth, Characterization and Theory Electronic and Structural Properties of Turbostratic Epitaxial Graphene on the 6H-SiC (000-1) Surface Spatially Graded Graphitization on 4H-SiC (0001) with Si-Sublimation Gradient for High Quality Epitaxial Graphene Growth Control of Epitaxial Graphene Thickness on 4H-SiC(0001) and Buffer Layer Removal through Hydrogen Intercalation Graphene on Carbon-Face Si {0001} Surfaces Formed in a Disilane Environment The Registry of Graphene Layers Grown on SiC(000-1). Large Area Quasi-Free Standing Monolayer Graphene on 3C-SiC(111) CVD Growth of Graphene on 2'' 3C-SiC/Si Templates: Influence of Substrate Orientation and Wafer Homogeneity Structural and Electrical Properties of Graphene Films Grown by Propane/Hydrogen CVD on 6H-SiC(0001) Local Solid Phase Epitaxy of Few-Layer Graphene on Silicon Carbide Study of Epitaxial Graphene on Non-Polar 6H-SiC Faces Micro- and Nano-Scale Electrical Characterization of Epitaxial Graphene on Off-Axis 4H-SiC (0001) Electrical Characterization of the Graphene-SiC Heterojunction Epitaxial Single-Layer Graphene on the SiC Substrate 4.2 Graphene Processing Decoupling the Graphene Buffer Layer from SiC(0001) via Interface Oxidation Studies of Li Intercalation into Epitaxial Graphene on SiC(0001) Plasma-Based Chemical Modification of Epitaxial Graphene Evidence of Electrochemical Graphene Functionalization by Raman Spectroscopy Molecular Gas Adsorption Induced Carrier Transport Studies of Epitaxial Graphene Using IR Reflection Spectroscopy 4.3 Graphene Devices and Sensors High Performance RF FETs Using High-k Dielectrics on Wafer-Scale Quasi-Free-Standing Epitaxial Graphene Gated Epitaxial Graphene Devices Suppression of Hole Current in Graphene Transistors with N-Type Doped SiC Source/Drain Regions T- and Y-Branched Three-Terminal Junction Graphene Devices Development of FETs and Resistive Devices Based on Epitaxially Grown Single Layer Graphene on SiC for Highly Sensitive Gas Detection Temperature Dependent Chemical Sensitivity of Epitaxial Graphene Chapter 5: Processing of SiC 5.1 MOS Processing, SiC-SiO2 Interface and Other Dielectrics (See also Sections 3.3 and 6.4) Synchrotron Radiation Photoelectron Spectroscopy Study of Thermally Grown Oxides on 4H-SiC(0001) Si-Face and (000-1) C-Face Substrates Challenges of High-Performance and High-Reliablity in SiC MOS Structures Effect of Post-Oxidation Annealing in Wet O2 and N2O Ambient on Thermally Grown SiO2/4H-SiC Interface for P-Channel MOS Devices Temperature Dependence of Inversion Layer Carrier Concentration and Hall Mobility in 4H-SiC MOSFETs Effects of N Incorporation on Electron Traps at SiO2/SiC Interfaces Impact of Interface Defect Passivation on Conduction Band Offset at SiO2/4H-SiC Interface Effect of Direct Nitridation of 4H-SiC Surface on MOS Interface States Improved Deposited Oxide Interfaces from N2 Conditioning of Bare SiC Surfaces Development of 4H-SiC MOSFETs with Phosphorus-Doped Gate Oxide Effect of POCl3 Annealing on Reliability of Thermal Oxides Grown on 4H-SiC The Effects of Phosphorus at the SiO2/4H-SiC Interface SiO2/SiC Interfacial Region: Presence of Silicon Oxycarbides and Effects of Hydrogen Peroxide and Water Vapor Thermal Treatments Improvement in the SiO2/4H-SiC Interfacial Region by Thermal Treatments with Hydrogen Peroxide Electron Trapping in 4H-SiC MOS Capacitors Fabricated by Sodium-Enhanced Oxidation Passivation and Depassivation of Interface Traps at the SiO2/4H-SiC Interface by Potassium Ions Impact of UV Irradiation on Thermally Grown 4H-SiC MOS Devices Study of High Temperature Microwave Annealing on the Performance of 4H-SiC MOS Capacitors Comparison of Oxide Quality for Monolithically Fabricated SiC CMOS Structures A Reduction of Defects in the SiO2-SiC System Using the SiC Vacuum Field-Effect Transistor (VacFET) Controlling Characteristics of 4H-SiC(0001) p-Channel MOSFETs Fabricated on Ion-Implanted n-Well Two-Dimensional Roughness Growth at Surface and Interface of SiO2 Films during Thermal Oxidation of 4H-SiC(0001) Effects of Surface Morphological Defects and Crystallographic Defects on Reliability of Thermal Oxides on C-Face Frequency-Dependent Charge Pumping on 4H-SiC MOSFETs Implementation of Sub-Resolvable Features for Precise Electrical Characterization of SiC Gate Oxide Parameters Identification of Slow States at the SiO2/SiC Interface through Sub-Bandgap Illumination Effect of Nuclear Scattering Damage at SiO2/SiC and Al2O3/SiC Interfaces - a Radiation Hardness Study of Dielectrics High Temperature Reliability of High-k/SiC MIS Hydrogen Sensors 5.2 Doping, Ion Implantation and Contacts Shallow Incorporation of Nitrogen in HPSI 4H-SiC through the Laser Enhanced Diffusion Process High Dose Al+ Implanted and Microwave Annealed 4H-SiC High Temperature Ion Implantation and Activation Annealing Technologies for Mass Production of SiC Power Devices Effects of Different Post-Implantation Annealing Conditions on the Electrical Properties of Interfaces to p-Type Implanted 4H-SiC The Thickness-Ratio Effects of Ni/Nb Electrode on Wire Bonding Strength with N-Type 4H-SiC The Formation Mechanism of Ni-Based Ohmic Contacts to 4H-n-SiC Electroless Nickel for N-Type Contact on 4H-SiC Development of an Extreme High Temperature n-Type Ohmic Contact to Silicon Carbide Investigation of Ti3SiC2 MAX Phase Formation onto N-Type 4H-SiC GaZnO as a Transparent Electrode to Silicon Carbide Common Metal Die Attachment for SiC Power Devices Operated in an Extended Junction Temperature Range Metal Work-function and Doping-Concentration Dependent Barrier Height of Ni-Contacts to 4H-SiC with Metal-Embedded Nano-Particles 5.3 Cutting, Etching, Micro- and Nano-Processing Cutting Speed of Electric Discharge Machining for SiC Ingot Cutting of SiC Wafer by Atmospheric-Pressure Plasma Etching with Wire Electrode Curious Relationship between Orientation of SiC Substrates and Chemical Reactivity High-Resolution TEM Observation of 4H-SiC (0001) Surface Planarized by Catalyst-Referred Etching Novel Cleaning Method of SiC Wafer with Transition Metal Complex Clearance of 4H-SiC Sub-Trench in Hot Chlorine Treatment SIMS Analyses Applied to Open an Optical Window in 4H-SiC Devices for Electro-Optical Measurements Focused Ion-Beam (FIB) Nanomachining of Silicon Carbide (SiC) Stencil Masks for Nanoscale Patterning Hexagonal Faceted SiC Nanopillars Fabricated by Inductively Coupled SF6/O2 Plasma Method Epitaxial Growth, Mechanical, Electrical Properties of SiC/Si and SiC/Poli-Si ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures Local Anodic Oxidation of Phosporous-Implanted 4H-SiC by Atomic Force Microscopy Chapter 6: SiC Devices, Circuits and Systems 6.1 Schottky Barrier Diodes Impact of Surface Morphology above Threading Dislocations on Leakage Current in 4H-SiC Diodes Experimental Demonstration of 1200V SiC-SBDs with Lower Forward Voltage Drop at High Temperature Performance of a 650V SiC Diode with Reduced Chip Thickness A Fully Electrically Isolated Package for High Temperature SiC Sensors Current Distribution in the Various Functional Areas of a 600V SiC MPS Diode in Forward Operation 4H-SiC Trench Structure Schottky Diodes Influence of Anode Layout on the Performance of SiC JBS Diodes Performance of Hybrid 4.5 kV SiC JBS Freewheeling Diode and Si IGBT Hybrid Si-IGBT/SiC Rectifier Co-Packs and SiC JBS Rectifiers Offering Superior Surge Current Capability and Reduced Power Losses 6.2 PiN and Heterojunction Diodes 12.9 kV SiC PiN Diodes with Low On-State Drops and High Carrier Lifetimes Design, Yield and Process Capability Study of 8 kV 4H-SiC PIN Diodes Characterization of Packaged 6.5 kV SiC PiN-Diodes up to 300 DegreesC 11.72 cm2 SiC Wafer-Scale Interconnected 1.8 kV / 64 kA PiN Diode Transient Electrical Characteristics of Electron Irradiated High Blocking Voltage 4H-SiC Pin Diode 600 V PIN Diodes Fabricated Using On-Axis 4H Silicon Carbide Experimental Study on Various Junction Termination Structures Applied to 15 kV 4H-SiC PiN Diodes Single Photolithography/Implantation 120-Zone Junction Termination Extension for High-Voltage SiC Devices Positive Temperature Coefficient SiC PiN Diodes Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers Electrical Characteristics of 4H-SiC Pin Diode with Carbon Implantation or Thermal Oxidation Physical Modelling of 4H-SiC PiN Diodes Thermal Stress Response of Silicon Carbide pin Diodes Used as Photovoltaic Devices Effect of Surface Morphology on the On-State Resistance of SiC Photoconductive Semiconductor Switches Novel Low VON Poly-Si/4H-SiC Heterojunction Diode Using Energy Barrier Height Control Fabrication of 4H-SiC/Nanocrystalline Diamond PN Junctions 6.3 JFETs and SITs Recovery of Bipolar-Current Induced Degradations in High-Voltage Implanted-Gate Junction Field Effect Transistors Demonstration of SiC Vertical Trench JFET Reliability Reliable Operation of 1200-V SiC Vertical Junction-Field-Effect-Transistor Subjected to 16,000-Pulse Hard Switching Stressing Avalanche Breakdown Energy in Silicon Carbide Junction Field Effect Transistors Characterization of SiC JFET in Novel Packaging for 1 MHz Operation Packaging Technologies for 500 DegreesC SiC Electronics and Sensors High Voltage SiC Vertical JFET for High Power RF Applications Design of an Integrated SiC JFET Power Switch and Flyback Diode A Novel 4H-SiC Fault Isolation Device with Improved Trade-Off between On-State Voltage Drop and Short Circuit SOA Fabrication Issues of 4H-SiC Static Induction Transistors 6.4 MOSFETs (See also Sections 3.3 and 5.1) High Performance SiC IEMOSFET/SBD Module Development of 1200 V, 3.7 m -cm2 4H-SiC DMOSFETs for Advanced Power Applications High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs 690V, 1.00 m cm2 4H-SiC Double-Trench MOSFETs SiC MOSFET Reliability Update Material Defects and Rugged Electrical Power Switching in Semiconductors Comparative Study of SiC MOSFETs in High Voltage Switching Operation Charge Trapping in Sic Power MOSFETs and its Consequences for Robust Reliability Testing 4H-SiC MOSFETs with a Stable Protective Coating for Harsh Environment Applications Integration of Temperature and Current Sensors in 4H-SiC VDMOS SiC-MOSFET Structure Enabling Fast Turn-On and -Off Switching Calibration of Mobility and Interface Trap Parameters for High Temperature TCAD Simulation of 4H-SiC VDMOSFETs 4H-SiC MOSFETs with Si-Like Low-Frequency Noise Characteristics High Temperature Performance of 3C-SiC MOSFETs with High Channel Mobility Dependence of the Channel Mobility in 3C-SiC n-MOSFETs on the Crystal Orientation and Channel Length 6.5 Bipolar Transistors Enhanced Current Gain (>250) in 4H-SiC Bipolar Junction Transistors by a Deep-Level-Reduction Process Large Area 1200 V SiC BJTs with >100 and ON<3 m cm2 1200 V-Class 4H-SiC "Super" Junction Transistors with Current Gains of 88 and Ultra-Fast Switching Capability Investigation of Current Gain Degradation in 4H-SiC Power BJTs Development of 15 kV 4H-SiC IGBTs Ultra high performance of 12kV Clustered Insulated Gate Bipolar Transistor (CIGBT) in 4H-SiC An Investigation of Material Limit Characteristics of SiC IGBTs Improved Energy Efficiency Using an IGBT/SiC-Schottky Diode Pair 6.6 Thyristors and GTOs 12 kV, 1 cm2 SiC GTO Thyristors with Negative Bevel Termination High dI/dt Pulse Switching of 1.0 cm2 SiC GTOs Integrated SiC Anode Switched Thyristor Modules for Smart-Grid Applications Fabrication and Characterization of 4H-SiC 6kV Gate Turn-Off Thyristor Comparison of SiC Thyristors with Differently Etched JTEs High-Yield 4H-SiC Thyristors for Wafer-Scale Interconnection Bipolar Degradation in 4H-SiC Thyristors Pulse Characterization of Optically Triggered SiC Thyristors Evaluation of High Power Experimental SiC SGTO Devices for Pulsed Power Applications 6.7 Sensors and Photodetectors Characterization of Large Area 4H-SiC and 6H-SiC Capacitive Devices at 600 DegreesC Development of High Temperature SiC Based Hydrogen/Hydrocarbon Sensors with Bond Pads for Packaging Laser-Doped SiC as Wireless Remote Gas Sensor Based on Semiconductor Optics Silicon Carbide Ultraviolet Photodetector Modeling, Design and Experiments 4H-SiC P+N UV Photodiodes : A Comparison between Beam and Plasma Doping Processes A Theoretical and Experimental Comparison of 4H- and 6H-SiC MSM UV Photodetectors Characterization of Poly-SiC Pressure Sensors for High Temperature and High Pressure Applications High Temperature Capacitive Pressure Sensor Employing a SiC Based Ring Oscillator 6.8 Systems and Circuits High Temperature Silicon Carbide Power Modules for High Performance Systems 10 kV SiC Power MOSFETs and JBS Diodes: Enabling Revolutionary Module and Power Conversion Technologies SiC JFET Power Modules for Reliable 250 DegreesC Operation A Compact 5-nH One-Phase-Leg SiC Power Module for a 600V-60A-40W/cc Inverter Performance of a 25kW 700V Galvanically Isolated Bidirectional DC-DC Converter Using 1.2kV Silicon Carbide MOSFETs and Schottky Diodes Switching Losses in a SiC-Based DC-DC Multilevel Boost Converter High Voltage SiC Schottky Diodes in Rectifiers for X-Ray Generators SiC Solid-State Disconnect for High Power System Applications A 450 DegreesC High Voltage Gain AC Coupled Differential Amplifier Bipolar Integrated OR-NOR Gate in 4H-SiC 300C Capable Digital Integrated Circuits in SiC Technology Reliability of Silicon Carbide Integrated Circuits at 300 DegreesC Direct Frequency Modulation of a High Temperature Silicon Carbide Oscillator Chapter 7: Related Materials 7.1 Nanomaterials Conversion of Si Nanowires into SiC Nanotubes Growth of SiC Nanowires on Different Planes of 4H-SiC Substrates Fabrication of Silicon Carbide Thin Film as a Stabilizing Layer for Improving the Stability of Porous Silicon Photodiodes 7.2 III-Nitrides Low Defect Density Bulk AlN Substrates for High Performance Electronics and Optoelectronics Control of the Growth Habit in the Na Flux Growth of GaN Single Crystals Evolution of Structural and Electrical Properties of Au/Ni Contacts onto P-GaN after Annealing Large GaN p-n Junction Diodes of 3 mm in Diameter on Free-Standing GaN Substrates with High Breakdown Voltage Performance Comparison of GaN Power Transistors and Investigation on the Device Design Issues Design of High-Performance Synchronous Buck DC-DC Converters Using GaN Power HEMTs 7.3 Diamond Density Functional Simulations of Transition Metal Terminated (001)-Diamond Surfaces Electrical Characterisation of Defects in Polycrystalline B-Doped Diamond Films Diamond Vertical Schottky Barrier Diode with Al2O3 Field Plate 7.4 n-ZnO/p-SiC Heterojunctions, Novel Nitride Semiconductors Fabrication and Characterization of n-ZnO/p-SiC Heterojunction Diode Effects of Substrate Temperature on the Electrical and the Optical Properties of N-Type ZnO/P-Type 4H-SiC CdGeN2 and ZnGe0.5Sn0.5N2: Two New Nitride Semiconductors with Band Gaps in the Blue-Green

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詳細情報

• NII書誌ID(NCID): BB14582109
• ISBN:
  • 9783037854198
• 出版国コード: sz
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: Durnten-Zurich
• ページ数/冊数: 2 v. (liii, 1353 p.)
• 大きさ: 25 cm.
• 件名:
  • LCSH : Silicon carbide -- Congresses
  • LCSH : Silicon carbide -- Electric properties -- Congresses
  • FREE : ICSCRM
• 親書誌ID:
  • BA00294222