Arbitrary modeling of TSVs for 3D integrated circuits

著者

    • Salah, Khaled
    • Ismail, Yehea I.
    • El-Rouby, Alaa

書誌事項

Arbitrary modeling of TSVs for 3D integrated circuits

Khaled Salah, Yehea Ismail, Alaa El-Rouby

(Analog circuits and signal processing series / consulting editor, Mohammed Ismail)

Springer, c2015

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注記

Includes bibliographical references and index

内容説明・目次

内容説明

This book presents a wide-band and technology independent, SPICE-compatible RLC model for through-silicon vias (TSVs) in 3D integrated circuits. This model accounts for a variety of effects, including skin effect, depletion capacitance and nearby contact effects. Readers will benefit from in-depth coverage of concepts and technology such as 3D integration, Macro modeling, dimensional analysis and compact modeling, as well as closed form equations for the through silicon via parasitics. Concepts covered are demonstrated by using TSVs in applications such as a spiral inductor and inductive-based communication system and bandpass filtering.

目次

Introduction: Work around Moore's Law.- 3D/TSV Enabling Technologies.- TSV Modeling and Analysis.- TSV Verification.- TSV Macro-Modeling Framework.- TSV Design Applications: TSV-Based On-Chip Spiral Inductor, TSV-Based On-Chip Wireless Communications and TSV-Based Bandpass Filter.- Imperfection in TSV Modeling.- New Trends in TSV.- TSV Fabrication.- Conclusions.

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