Fundamentals of modern VLSI devices

著者

書誌事項

Fundamentals of modern VLSI devices

Yuan Taur, Tak H. Ning

Cambridge University Press, 2022

3rd ed

  • : hardback

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注記

Includes bibliographical references (p. 565-586) and index

内容説明・目次

内容説明

A thoroughly updated third edition of an classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, short-channel FinFETS, and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry.

目次

  • Prefaces
  • Physical constants and unit conversions
  • List of symbols
  • 1. Introduction
  • 2. Basic device physics
  • 3. p-n junctions and metal-silicon contacts
  • 4. MOS capacitors
  • 5. MOSFETs: long channel
  • 6. MOSFETs: short channel
  • 7. Silicon-on-insulator and double-gate MOSFETs
  • 8. CMOS performance factors
  • 9. Bipolar devices
  • 10. Bipolar device design
  • 11. Bipolar performance factors
  • 12. Memory devices
  • References
  • Index.

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