Mathematical problems in semiconductor physics
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Bibliographic Information
Mathematical problems in semiconductor physics
(Pitman research notes in mathematics series, 340)
Longman, 1995
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Library, Research Institute for Mathematical Sciences, Kyoto University数研
C-P||Rome||1993.1295063605
Note
Includes bibliographical references
Description and Table of Contents
Description
This collection of papers arises from a workshop held at the "Istituto per le Applicazioni del Calcolo" of the Italian CNR. The first part of the book includes the material covered by three mini-series of lectures at graduate level on some advanced mathematical topics in semiconductor physics. The second part of the book includes more specialized topics, covered by invited speakers in their individual lectures. The volume can be used both at introductory level and as an updated and advanced review of the current literature. Most of the papers are concerned with both the macroscopic and microscopic models, ranging from the kinetic to the hydrodynamic and quantum-hydrodynamic models.
Table of Contents
- Part 1 General lectures: an extended thermodynamic framework for the hydrodynamical modelling of semiconductors, A.M. Anile
- macroscopic theory of charged quantum fluids, I. Gasser et al
- the Child-Langmuir law in the kinetic theory of charged particles - semiconductor models, N. Ben Abdallah and P. Degond. Part 2 Contributed lectures: the relaxation-time Wigner equation, A. Arnold
- Gunn instabilities in extrinsic semiconductors, L.L. Bonilla
- the drift-diffusion model as an evolution equation of special structure, H. Gajewski
- approximate kinetic equations for ID carrier flow in semiconductor devices, A. Majorana
- relaxation phenomena for the hydrodynamic models in semiconductors, P.A. Marcati and R. Natalini
- drift diffusion models for heterostructures in semiconductors, F. Poupand and A. Yamnahakki
- an extension of the hydrodynamic model equations, C. Ringhofer
- the hydrodynamic model in semiconductors - coefficient calculation for the conduction band of silicon, M. Rudan et al.
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