Solid state electronic devices
Author(s)
Bibliographic Information
Solid state electronic devices
（Prentice-Hall series in solid state physical electronics）
Prentice Hall, c2000
5th ed
Available at / 9 libraries
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Hokkaido University, Library, Graduate School of Science, Faculty of Science and School of Science図書
621.381/ST832080044061
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Note
Includes bibliographical references and index
Description and Table of Contents
Description
For undergraduate-level courses in Electronic Devices.
THE most widely used introduction to solid state electronic devices text, this book is designed to help students gain a basic understanding of semiconductor devices and the physical operating principles behind them. This two-fold approach 1) provides students with a sound understanding of existing devices, so that their studies of electronic circuits and systems will be meaningful, and 2) helps them develop the basic tools with which they can later learn about applications and the latest devices. The text provides one of the most comprehensive treatments of all the important semiconductor devices, and reflects the most current trends in the technology and theoretical understanding of the devices.
Table of Contents
1. Crystal Properties and Growth of Semiconductors.
2. Atoms and Electrons.
3. Energy Bands and Charge Carriers in Semiconductors.
4. Excess Carriers in Semiconductors.
5. Junctions.
6. Field-Effect Transistors.
7. Bipolar Junction Transistors.
8. Optoelectronic Devices.
9. Integrated Circuits.
10. Negative Conductance Microwave Devices.
11. Power Devices.
Appendix I. Definitions of Commonly Used Symbols.
Appendix II. Physical Constants and Conversion Factors.
Appendix III. Properties of Semiconductor Materials.
Appendix IV. Derivation of the Density of States in the Conduction Band.
Appendix V. Derivation of Fermi-Dirac Statistics.
Appendix VI. Dry and Wet Thermal Oxide Thickness as a Function of Time and Temperature.
Appendix VII. Solid Solubilities of Impurities in Si.
Appendix VIII. Diffusivities of Dopants in Si and SiO2.
Appendix IX. Projected Range and Straggle as a Function of Implant Energy in Si, SiO2 and GaAs.
Index.
by "Nielsen BookData"
