Advanced gate stack, source/drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment

Author(s)

• Timans, P.J.
• Gusev, E. P.
• Iwai, H.
• Kwong, D.-L
• Öztürk, M. C
• Roozeboom, F.
• Electrochemical Society. Meeting
• Electrochemical Society

Bibliographic Information

Advanced gate stack, source/drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment

editors, P.J. Timans ... [et al.] ; sponsoring divisions, Electronics and Photonics, Dielectric Science & Technology, High Temperature Materials

（ECS transactions, vol. 13, no. 1）

Electrochemical Society, c2008

Note

Includes bibliographical references and indexes

Other editors: E. P. Gusev, H. Iwai, D.-L. Kwong, M. C. Öztürk, F. Roozeboom

"From May 18-22, 2008, the international symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Prosesses and Equipment, 4 will be held in Phoenix, the capital and the industrial and commercial center of Arizona (USA), as a part of the 213th Meeting of the Electrochemical Society" -- iii p.

Details

• NCID: BA86187918
• ISBN:
  • 9781566776264
• Country Code: us
• Title Language Code: eng
• Text Language Code: eng
• Place of Publication: Pennington, NJ
• Pages/Volumes: x, 474 p.
• Size: 23 cm
• Parent Bibliography ID:
  • BA78566502