Advanced gate stack, source/drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment
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書誌事項
Advanced gate stack, source/drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment
(ECS transactions, vol. 13,
Electrochemical Society, c2008
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注記
Includes bibliographical references and indexes
Other editors: E. P. Gusev, H. Iwai, D.-L. Kwong, M. C. Öztürk, F. Roozeboom
"From May 18-22, 2008, the international symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Prosesses and Equipment, 4 will be held in Phoenix, the capital and the industrial and commercial center of Arizona (USA), as a part of the 213th Meeting of the Electrochemical Society" -- iii p.