VLSI electronics : microstructure science

著者

• Einspruch, Norman G.

書誌事項

VLSI electronics : microstructure science

edited by Norman G. Einspruch

Academic Press, 1981-

• v. 1
• v. 2
• v. 3
• v. 4
• v. 5
• v. 7
• v. 9

注記

v. 6, 8, 10-<21 > with special titles

Includes bibliographical references and indexes

子書誌あり

内容説明・目次

内容説明

VLSI Electronics: Microstructure Science, Volume 1 assesses trends for the future of very large scale integration (VLSI) electronics and the scientific base that supports its development. This book discusses the manufacturing process technology for MOS VLSI, principles of optical lithography, and resolution limitations for submicron lithography. The research and resource at the national submicron facility, limitations of small devices and large systems, and physics and modeling of submicron insulated-gate field-effect transistors are also elaborated. This text likewise covers the government role in VLSI and VLSI as a major new tool for productivity improvement. This volume is suitable for scientists and engineers who wish to become familiar with VLSI electronics, device designers concerned with the fundamental character of and limitations to device performance, systems architects who will be charged with tying VLSI circuits together, and engineers conducting work on the utilization of VLSI circuits in specific areas of application.

目次

List of Contributors Preface Contents of Other Volumes Chapter 1 Manufacturing Process Technology for MOS VLSI I. Introduction II. Trends in Complexity III. Horizontal Scaling IV. Vertical Scaling V. Characterization and Process Control VI. Material VII. The Manufacturing Facility VIII. Summary References Chapter 2 Principles of Optical Lithography List of Symbols I. Introduction II. Optical Exposure Techniques III. Photoresists and Substrates IV. The Characterization of the Lithographic Image v. Feature Size Control VI. Focal Tolerance VII. Overlay VIII. Conclusion Appendix Effect of f/Number and Wavelength on the Incoherent Focal Tolerance References Chapter 3 Resolution Limitations for Submicron Lithography I. Introduction II. Ideal Properties III. Diffraction Effects IV. Scattering and Energy Loss V. Engineering Considerations VI. Statistical Considerations VII. Projections References Chapter 4 Research and Resource at the National Submicron Facility I. Introduction II. Research Programs III. Resources IV. Future Directions for NRRFSS References Chapter 5 Limitations of Small Devices and Large Systems I. Introduction II. Physical Nature of Information Processing III. Devices for LSI IV. Limits to Miniaturization V. Large Systems VI. Performance VII. Alternatives Appendix MESFETs References Chapter 6 Physics and Modeling of Submicron Insulated-Gate Field-Effect Transistors. I I. Introduction II. The MOSFET III. Two-Dimensional Effects IV. Carrier Injection and Breakdown V. Carrier Transport References Chapter 7 The Government Role in VLSI I. Introduction II. Department of Defense Programs III. Science Agency Programs IV. Policy Issues References Chapter 8 VLSI, A Major New Tool for Productivity Improvement The Potential for Electronics in Manufacturing Productivity Appendix I. Estimating the Translog Cost Function for U.S. Manufacturing with Factor Augmentation Appendix II. Improving Productivity through the Use of AEGs-Eighteen Applications and Their Relationship to U.S. Manufacturing References Index

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詳細情報

• NII書誌ID(NCID): BA00191015
• ISBN:
  • 0122341015
  • 0122341023
  • 0122341031
  • 012234104X
  • 0122341058
  • 0122341074
  • 0122341090
• LCCN: 81002877
• 出版国コード: us
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: New York ; Tokyo
• ページ数/冊数: v.
• 大きさ: 24 cm
• 分類:
  • LCC : TK7874
  • DC19 : 621.395 s
• 件名:
  • LCSH : Integrated circuits -- Very large scale integration